Abstract: The invention relates to a method and device for detecting the presence of specific molecules, comprising, one on top of the other, a first substrate layer, a second reflective layer and a third dielectric layer. The invention is characterized by an antenna array with conductive parts, repeating in one direction, the network forming a plasmonic resonator that can be brought into contact with the molecules and arranged so as to emit at least one thermal radiation peak corresponding to at least one natural mode of thermal vibration of the specific molecules.

Abstract: The invention relates to a device (1) for detecting the presence of determined molecules, comprising, one on top of the other: a first substrate layer (11), a second reflection layer (12), and a third dielectric layer (13). The invention is characterised by an antenna array (14) with conductive parts (143), repeating in one direction (D, D2), the network (14) forming a plasmonic resonator (140) that can be brought into contact with the molecules and arranged so as to emit at least one thermal radiation peak corresponding to at least one characteristic mode of thermal vibration of the determined molecules.

Abstract: An active zone for a light emission system including a series of layers at least a portion of which consists of antimony semiconductors III-V. The layers are arranged to form at least one quantum well surrounded by barriers for generating a light emission. The active zone also includes at least one layer forming an intermediate barrier arranged relative to the quantum well to form at least two quantum sub-wells coupled with each other. A heterostructure including at least one optical confinement layer surrounding at least one active zone; a laser emission system including one heterostructure deposited onto a substrate; and the use of an active zone for emitting a light beam having a wavelength of 1.55 ?m are disclosed.

Abstract: An active zone for a light emission system including a series of layers at least a portion of which consists of antimony semiconductors III-V. The layers are arranged to form at least one quantum well surrounded by barriers for generating a light emission. The active zone also includes at least one layer forming an intermediate barrier arranged relative to the quantum well to form at least two quantum sub-wells coupled with each other. A heterostructure including at least one optical confinement layer surrounding at least one active zone; a laser emission system including one heterostructure deposited onto a substrate; and the use of an active zone for emitting a light beam having a wavelength of 1.55 ?m are disclosed.