Abstract: A reflective mask (e.g., an EUV reflective mask) and a method of making such a mask are disclosed. The mask includes an absorbent substrate and a reflective coating overlying the substrate. The reflective coating is patterned to include a circuit design that is to be transferred onto one or more wafers, and more particularly onto one or more die on the wafers, during semiconductor fabrication processing. The mask includes no other radiation absorbent material, and the occurrence and severity of dead zones, which commonly occur in conventional reflective masks and which degrade the fidelity of pattern transfers, are thereby mitigated. A methodology for inspecting the mask via the transmission of visible, UV or deep-UV radiation through the mask is also disclosed.

Abstract: A photomask and method for maintaining optical properties of the same are disclosed. The method includes providing a substrate including a first surface having an absorber layer formed thereon and a second surface located opposite the first surface. A pattern is formed in the absorber layer to create a photomask for use in a semiconductor manufacturing process. A transmissive protective layer is also formed on at least one of the patterned layer and the second surface of the substrate. The protective layer reduces haze growth when the photomask is used in the semiconductor manufacturing process.

Abstract: A photomask and method for manufacturing the same are disclosed. A first material is deposited on at least a portion of a substrate to form a first material layer. Before completion of the deposition of the first material, a thermal treatment is applied to the substrate at a temperature greater than approximately 300 degrees Celsius.

Abstract: A photomask and method for creating a protective layer on the photomask are disclosed. The method includes placing a photomask including a patterned layer formed on at least a portion of a substrate in a chamber. Oxygen is introduced into the chamber proximate the patterned layer and the photomask is exposed to radiant energy that initiates a reaction between the oxygen and the patterned layer in order to passivate the patterned layer and prevent optical properties of the patterned layer from being altered by a cleaning process.

Abstract: A method for producing a halftone phase shift mask blank having a semi-transmission film on a transparent substrate includes alternately laminating, on a transparent substrate, thin layers substantially made of nitrogen and titanium and thin layers substantially made of nitrogen and silicon to thereby form thereon a multi-layered semi-transmission film, followed by heating the semi-transmission film at 300° C. or higher.

Abstract: An ion-beam film deposition process is described for fabricating binary photomask blanks for selected lithographic wavelengths <400 nm, the said film essentially consisting of the MOxCyNz compound where M is selected from chromium, molybdenum, tungsten, or tantalum or combination thereof in a single layer or a multiple layer configuration.

Abstract: A single ion-beam deposition, or a dual ion-beam deposition process for fabricating attenuating phase shift photomask blanks capable of producing a phase shift of 180° and having an optical transmissivity of at least 0.001 at selected lithographic wavelengths <400 nm, comprising at least one layer of an optically transmitting and/or one layer of optically absorbing elemental or a compound material in a periodic or an aperiodic arrangement.

Abstract: An ion-beam film deposition process is described for fabricating binary photomask blanks for selected lithographic wavelengths <400 nm, the said film essentially consisting of the MOxCyNz compound where M is selected from chromium, molybdenum, tungsten, or tantalum or combination thereof in asingle layer or a multiple layer configuration.

Abstract: A method for producing a halftone phase shift mask blank having a semi-transmission film on a transparent substrate includes alternately laminating, on a transparent substrate, thin layers substantially made of nitrogen and titanium and thin layers substantially made of nitrogen and silicon to thereby form thereon a multi-layered semi-transmission film, followed by heating the semi-transmission film at 300° C. or higher.

Abstract: A photomask and method for repairing defects on the same are disclosed. The photomask preferably includes a substrate, a buffer layer and a nontransmissive layer with the buffer layer disposed between the substrate and the nontransmissive layer. The method includes forming a pattern in the nontransmissive layer. If one or more defects are identified in the patterned nontransmissive layer, the buffer layer protects the substrate from damage when defects in the patterned nontransmissive layer are repaired.

Abstract: An ion-beam film deposition process is described for fabricating binary photomask blanks for selected lithographic wavelengths <400 nm, the said film essentially consisting of the MOxCyNz compound where M is selected from chromium, molybdenum, tungsten, or tantalum or combination thereof in a single layer or a multiple layer configuration.

Abstract: A photomask and method for manufacturing the same are disclosed. A first material is deposited on at least a portion of a substrate to form a first material layer. Before completion of the deposition of the first material, a thermal treatment is applied to the substrate at a temperature greater than approximately 300 degrees Celsius.

Abstract: A single ion-beam deposition, or a dual ion-beam deposition process for fabricating attenuating phase shift photomask blanks capable of producing a phase shift of 180° and having an optical transmissivity of at least 0.001 at selected lithographic wavelengths <400 nm, comprising at least one layer of an optically transmitting and/or one layer of optically absorbing elemental or a compound material in a periodic or an aperiodic arrangement.