Abstract: The invention relates to a LIDAR imaging system of the FMCW type, comprising a light source (10), an optical projection device (20), an optical transmission device (30), an optical imaging device (40), and a matrix photodetector (50). It further comprises a phase correction device (60) comprising a spatial phase modulator (61) for applying a corrected spatial phase distribution to the reference signal, and a computation unit (62) for determining the corrected spatial phase distribution, by taking into account a spatial distribution representing a spatial intensity distribution of the backscattered object signal, so that the reference signal has a corrected spatial intensity distribution in the reception plane optimizing a spatial distribution of a parameter of interest representing the heterodyne signal.

Abstract: A detection device for a coherent lidar imaging system includes an integrated detector comprising a matrix array of pixels distributed over N columns and M rows and comprising an optical guide, called reference guide, configured so as to receive a laser beam, called reference beam, N optical guides, called column guides, coupled to the reference guide, each column guide being coupled to M optical guides, called row guides, the M row guides being configured so as to route part of the reference beam into each pixel of the column, called pixel reference beam, each pixel of the integrated detector comprising: a guided photodiode coupled to an optical detection guide, a diffraction grating, called pixel grating, configured so as to couple a portion of a beam illuminating the pixel into the guided photodiode, a coupler, called pixel coupler, configured so as to couple the pixel coupled beam and at least a fraction of the pixel reference beam into the detection guide, an electronic readout and preprocessing circuit.

Abstract: An optical scanner (100) which comprises: a mirror (200), pivotally mounted about a first pivot axis and is partially transparent from its front face (210) towards its rear face (220) to the light radiation; a light source (300) intended to emit an incident light radiation on the front face (210) of the mirror (200); the scanner is characterised in that the rear face (220) comprises a structuration formed by at least one facet essentially planar and inclined with respect to the front face (210) so that a light radiation, incident on the front face (210), and transmitted by the at least one facet (220i) undergoes a deflection with respect to the angle of incidence of said light radiation on the front face (210).

Abstract: A detection device for a coherent imaging system includes a detector comprising a matrix array of pixels, each pixel comprising a photodetector component having a photosensitive surface, the detector being designed to be illuminated by a coherent beam, called the image beam consisting of grains of light called speckle grains, a matrix array of transmissive deflecting elements configured to be individually orientable by means of an electrical signal, so as to deflect a fraction of the image beam incident on the group, and thus modify the spatial distribution of the speckle grains in the plane of the photosensitive surface, each group of one or more pixels further comprising a feedback loop associated with the deflecting element and configured to actuate the deflecting element so as to optimize the signal-to-noise ratio from the light detected by the one or more photodetector components of the group of pixels, the feedback loop comprising a feedback circuit.

Abstract: A reflector device reflects luminous radiation of wavelength ?. The device is provided with a supporting base whereon are assembled a partially transparent mirror having a partially reflective front face and luminous radiation scattering and/or absorption structure to scatter and/or absorb luminous radiation liable to be transmitted by a rear face, opposite the front face.

Abstract: A device for detecting (D) at least one predetermined particle (P) includes an interferometric element (EI) arranged so as to be illuminated by an incident radiation (Lin) and comprising at least one so-called thin layer (CM) disposed on top of a so-called substrate layer (Sub), the particle being attached to a surface (Sm) of the thin layer, the interferometric element (EI) forming a Fabry-Pérot cavity with or without attached particle P; a matrix sensor (Det) adapted to detect an image comprising a first portion (P1) deriving from the detection of the incident radiation transmitted (LTBG) by the interferometric element alone and a second portion (P2) deriving from the detection of the incident radiation transmitted (LTP) by the interferometric element and any particle (O, P) attached to a surface (Sm) of the thin layer; a processor (UT) linked to the sensor and configured: to calculate, as a function of wavelengths of the incident radiation ?i i?[1,m], the variation of intensity of at least one first pixel

Abstract: A pixelated filter intended to rest on a support and including, in a stacking direction: first filter pixels each including a first interference filter covered with a first dielectric block; and second filter pixels each including a second dielectric block, having a thickness greater than or equal to the thickness of the first interference filter, covered with a second interference filter, having a thickness smaller than or equal to the thickness of the first dielectric block, wherein, for at least one of the second filter pixels, the second dielectric block of the second filter pixel is interposed between the first interference filters of two first filter pixels and the second interference filter of the second filter pixel is interposed between the first dielectric blocks of the first two filter pixels.

Abstract: An image sensor including a plurality of pixels, each including: a semiconductor photodetection region; a metal region arranged on a first surface of the semiconductor region; a band-pass or band elimination interference filter arranged on a second surface of the semiconductor region opposite to the first surface; and between the semiconductor region and the metal region, a portion of the absorbing layer made of a material different from that of the semiconductor region, the absorbing layer being capable of absorbing, in a single passage, more than 30% of an incident radiation at the central wavelength of the pass band or of the stop band of the interference filter.

Abstract: An interference filter, including a first interface layer; a first dielectric portion of a first dielectric material, having a first thickness and resting on the first interface layer at a first location; a second dielectric portion of the first dielectric material, the second dielectric portion resting on the first interface layer at a second location, the second dielectric portion having a second thickness greater than the first thickness; a third dielectric portion of a second dielectric material having a refraction index smaller than the refraction index of the first material, the third dielectric portion having a third thickness and resting on the first dielectric portion, the sum of the first thickness and of the third thickness being equal to the second thickness; and a second interface layer resting on the second and third dielectric portions.

Abstract: A filtering device comprising first and second interference filters each comprising a Fabry-Perot cavity formed by semi-reflective layers between which a structured layer is arranged, wherein the structured layer belongs conjointly to the two filters, has a substantially constant thickness, is substantially planar and comprises two materials with different refractive indices arranged in each of the cavities, forming vertical structurings, the cavity of the second filter comprises a spacer arranged between one of the semi-reflective layers and the structured layer so that a distance between the semi-reflective layers of the cavity of the second filter is greater than a distance between the semi-reflective layers of the cavity of the first filter, and the filters comprise a second structured layer arranged in the cavities of the filters, and/or each filter comprises a second Fabry-Perot cavity comprising a third structured layer.

Abstract: A device for detecting electromagnetic radiation includes at least one thermal detector, placed on a substrate; an encapsulating structure forming a cavity housing the thermal detector, including at least one thin encapsulating layer; and at least one Fabry-Perot interference filter, formed by first and second semi-reflective mirrors that are separated from each other by a structured layer. A high-index layer of one of the semi-reflective mirrors is at least partially formed from the thin encapsulating layer.

Abstract: An image sensor including a plurality of pixels, each including: a semiconductor photodetection region; a metal region arranged on a first surface of the semiconductor region; a band-pass or band elimination interference filter arranged on a second surface of the semiconductor region opposite to the first surface; and between the semiconductor region and the metal region, a portion of the absorbing layer made of a material different from that of the semiconductor region, the absorbing layer being capable of absorbing, in a single passage, more than 30% of an incident radiation at the central wavelength of the pass band or of the stop band of the interference filter.

Abstract: A filtering device comprising first and second interference filters each comprising a Fabry-Perot cavity formed by semi-reflective layers between which a structured layer is arranged, wherein the structured layer belongs conjointly to the two filters, has a substantially constant thickness, is substantially planar and comprises two materials with different refractive indices arranged in each of the cavities, forming vertical structurings, the cavity of the second filter comprises a spacer arranged between one of the semi-reflective layers and the structured layer so that a distance between the semi-reflective layers of the cavity of the second filter is greater than a distance between the semi-reflective layers of the cavity of the first filter, and the filters comprise a second structured layer arranged in the cavities of the filters, and/or each filter comprises a second Fabry-Perot cavity comprising a third structured layer.

Abstract: A filtering device comprising first and second interference filters each comprising a Fabry-Perot cavity formed by semi-reflective layers between which a structured layer is arranged, wherein the structured layer belongs conjointly to the two filters, has a substantially constant thickness, is substantially planar and comprises two materials with different refractive indices arranged in each of the cavities, forming vertical structurings, the cavity of the second filter comprises a spacer arranged between one of the semi-reflective layers and the structured layer so that a distance between the semi-reflective layers of the cavity of the second filter is greater than a distance between the semi-reflective layers of the cavity of the first filter, and the filters comprise a second structured layer arranged in the cavities of the filters, and/or each filter comprises a second Fabry-Perot cavity comprising a third structured layer.

Abstract: A pixelated filter intended to rest on a support and including, in a stacking direction: first filter pixels each including a first interference filter covered with a first dielectric block; and second filter pixels each including a second dielectric block, having a thickness greater than or equal to the thickness of the first interference filter, covered with a second interference filter, having a thickness smaller than or equal to the thickness of the first dielectric block, wherein, for at least one of the second filter pixels, the second dielectric block of the second filter pixel is interposed between the first interference filters of two first filter pixels and the second interference filter of the second filter pixel is interposed between the first dielectric blocks of the first two filter pixels.

Abstract: An interference filter, including a first interface layer; a first dielectric portion of a first dielectric material, having a first thickness and resting on the first interface layer at a first location; a second dielectric portion of the first dielectric material, the second dielectric portion resting on the first interface layer at a second location, the second dielectric portion having a second thickness greater than the first thickness; a third dielectric portion of a second dielectric material having a refraction index smaller than the refraction index of the first material, the third dielectric portion having a third thickness and resting on the first dielectric portion, the sum of the first thickness and of the third thickness being equal to the second thickness; and a second interface layer resting on the second and third dielectric portions.

Abstract: A method of manufacturing a detector capable of detecting a wavelength range [?8; ?14] centered on a wavelength ?10, including: forming said device on a substrate by depositing a sacrificial layer totally embedding said device; forming, on the sacrificial layer, a cap including first, second, and third optical structures transparent in said range [?8; ?14], the second and third optical structures having equivalent refraction indexes at wavelength ?10 respectively greater than or equal to 3.4 and smaller than or equal to 2.3; forming a vent of access to the sacrificial layer through a portion of the cap, and then applying, through the vent, an etching to totally remove the sacrificial layer.

Abstract: An image sensor having a portion including interconnection levels formed on a semiconductor substrate covered with a first layer of a dielectric material, including conductive tracks separated from one another by insulating layers interconnected by vias crossing the insulating layers, and an infrared bandpass filter comprising filter levels adjacent to the interconnection levels formed by an alternation of second layers of the dielectric material and of silicon layers, the refraction index of the dielectric material being smaller than 2.5 at the maximum transmission wavelength of the filter, one of the second dielectric layers of each filter level being identical to the insulating layer of the adjacent interconnection level.

Abstract: A photodiode has an active portion formed in a silicon substrate and covered with a stack of insulating layers successively including at least one first silicon oxide layer, an antireflection layer, and a second silicon oxide layer. The quantum efficiency of the photodiode is optimized by: determining, for the infrared wavelength, first thicknesses of the second layer corresponding to maximum absorptions of the photodiode, and selecting, from among the first thicknesses, a desired thickness, eoxD, so that a maximum manufacturing dispersion is smaller than a half of a pseudo-period separating two successive maximum absorption values.

Abstract: The invention relates to a single-photon avalanche diode (SPAD) photodiode having a layer made of semiconductor material, including an N doped zone and a P doped zone separated by an avalanche zone. The semiconductor material layer is intercalated between a periodic structure and a low index layer having a refractive index less than that of the semiconductor material layer and less than that of the periodic structure. The periodic structure is deposited directly on the semiconductor material layer. The photodiode provides low temporal dispersion and high quantum efficiency, without requiring a strong charge acceleration voltage.