Abstract: A method for shape classification of an object is provided. Shape categories are provided which specify a plane and points therein relative to the object, and also specify at least one limit coordinate for each such point, the limit coordinate defining a boundary in a direction normal to the plane for the shape of the object considered in order for the object to be classified into a respective shape category. The shape categories can be provided by a user, making the method very flexible. The shape categories can in particular be derived from a set of samples of objects representing a shape category to be defined. For classification, the position of a surface of the object is measured at each of the points defined in the shape category, and the result is compared with the corresponding limit coordinate.

Abstract: A method for shape classification of an object is provided. Shape categories are provided which specify a plane and points therein relative to the object, and also specify at least one limit coordinate for each such point, the limit coordinate defining a boundary in a direction normal to the plane for the shape of the object considered in order for the object to be classified into a respective shape category. The shape categories can be provided by a user, making the method very flexible. The shape categories can in particular be derived from a set of samples of objects representing a shape category to be defined. For classification, the position of a surface of the object is measured at each of the points defined in the shape category, and the result is compared with the corresponding limit coordinate.

Abstract: An apparatus (1) and a method for the three dimensional inspection of saw marks (2) on at least one surface (3) of a wafer (4) are disclosed. At least one camera (6) is required to capture an image of the entire surface (3) of the wafer (4). At least one line projector (8) provides a light bundle (5), centered about a central beam axis (9). The line projector (8) is arranged such that the central beam axis (9) is at an acute angle (?) with regard to the plane (P) of the wafer (4). A line shifter (12) is positioned in the light bundle (5) between each line projector (8) and the surface (3) of the wafer (4). A frame grabber (14) and an image processor (16) are used to synchronize and coordinate the image capture and the position of the pattern (20) of lines (22) on the front side (3F) and/or the back side (3B) of the wafer (4).

Abstract: An apparatus (1) and a method for the three dimensional inspection of saw marks (2) on at least one surface (3) of a wafer (4) are disclosed. At least one camera (6) is required to capture an image of the entire surface (3) of the wafer (4). At least one line projector (8) provides a light bundle (5), centered about a central beam axis (9). The line projector (8) is arranged such that the central beam axis (9) is at an acute angle (?) with regard to the plane (P) of the wafer (4). A line shifter (12) is positioned in the light bundle (5) between each line projector (8) and the surface (3) of the wafer (4). A frame grabber (14) and an image processor (16) are used to synchronize and coordinate the image capture and the position of the pattern (20) of lines (22) on the front side (3F) and/or the back side (3B) of the wafer (4).

Abstract: An apparatus (1) and a method for the three dimensional inspection of saw marks (2) on at least one surface (3) of a wafer (4) are disclosed. At least one camera (6) is required to capture an image of the entire surface (3) of the wafer (4). At least one line projector (8) provides a light bundle (5), centered about a central beam axis (9). The line projector (8) is arranged such that the central beam axis (9) is at an acute angle (?) with regard to the plane (P) of the wafer (4). A line shifter (12) is positioned in the light bundle (5) between each line projector (8) and the surface (3) of the wafer (4). A frame grabber (14) and an image processor (16) are used to synchronize and coordinate the image capture and the position of the pattern (20) of lines (22) on the front side (3F) and/or the back side (3B) of the wafer (4).