Patents by Inventor Laurent Mollard
Laurent Mollard has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20210011280Abstract: A scanner including at least: a support including at least one first movable part, an actuator configured to move the first movable part of the support, and a phased optical grating disposed on the first movable part of the support and including at least one plurality of optical phase shifters and an optical source coupled to a plurality of optical phase shifters which is able to emit an optical beam coming from the optical source.Type: ApplicationFiled: July 6, 2020Publication date: January 14, 2021Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Stephane FANGET, Fabrice CASSET, Laurent MOLLARD
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Publication number: 20200333547Abstract: A reflector device reflects luminous radiation of wavelength ?. The device is provided with a supporting base whereon are assembled a partially transparent mirror having a partially reflective front face and luminous radiation scattering and/or absorption structure to scatter and/or absorb luminous radiation liable to be transmitted by a rear face, opposite the front face.Type: ApplicationFiled: April 15, 2020Publication date: October 22, 2020Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Laurent MOLLARD, Christel DIEPPEDALE, Laurent FREY, Francois GARDIEN, Jean HUE
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Publication number: 20200203662Abstract: A process includes the following successive steps: a) providing a substrate including a structured first electrode; b) forming in succession first and second bilayer stacks on the structured first electrode, each bilayer stack including in succession first and second layers made of first and second materials that are transparent conductive oxides able to be selectively etched; c) etching the second bilayer stack in a zone intended to accommodate a blue subpixel and in a zone intended to accommodate a green subpixel; d) etching the first bilayer stack in the zone intended to accommodate the blue subpixel; e) forming a stack of organic light-emitting layers, the stack being configured to emit white light; f) forming a second electrode on the stack of organic light-emitting layers so as to obtain an optical resonator with the first electrode.Type: ApplicationFiled: December 12, 2019Publication date: June 25, 2020Applicant: Commissariat A L'Energie Atomique et aux Energies AlternativesInventors: Laurent MOLLARD, Tony MAINDRON, Myriam TOURNAIRE
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Publication number: 20200066808Abstract: A pixel includes, successively a substrate; a reflector that is reflective in the visible spectrum; a spacing layer; a first, transparent electrode; a stack of organic light-emitting layers that is configured to emit a white light; a second, semitransparent electrode that is formed on the stack, the second electrode and the reflector forming an optical resonator; the spacing layer having first, second and third portions, the thicknesses of which are adjusted such that the optical resonator allows, respectively, the transmission of red, green and blue light; noteworthy in that the first and second portions of the spacing layer each include lateral edges that are covered with a material that is reflective in the visible spectrum.Type: ApplicationFiled: August 20, 2019Publication date: February 27, 2020Applicant: Commissariat A L'Energie Atomique et aux Energies AlternativesInventors: Laurent MOLLARD, Tony MAINDRON, Myriam TOURNAIRE
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Publication number: 20190393201Abstract: A device for the transfer of chips from a source substrate onto a destination substrate, including: a source substrate having a lower surface and an upper surface; and a plurality of elementary chips arranged on the upper surface of the source substrate, wherein each elementary chip is suspended above the source substrate by at least one breakable mechanical fastener, said at least one breakable mechanical fastener having a lower surface fastened to the upper surface of the source substrate and an upper surface fastened to the lower surface of the chip.Type: ApplicationFiled: June 24, 2019Publication date: December 26, 2019Applicant: Commissariat à l'Énergie Atomique et aux Énergies AlternativesInventors: Stéphane Caplet, Laurent Mollard
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Patent number: 10177193Abstract: An array of mesa photodiodes, including a useful layer of CdxHg1-xTe wherein pads are formed. The array includes a first doped zone having a first N or P doping; and second doped zones having a second P or N doping of a different type from that of the first doping, and each extending on an upper region of a pad. The first doped zone includes at least one first region having a first doping density, located at least under each of the pads; and at least one second region, located between two neighboring pads, and having a second doping density higher than the first doping density, each second region being separated from the closest second doped zone by at least one portion of the first region.Type: GrantFiled: May 6, 2015Date of Patent: January 8, 2019Assignee: Commissariat à l'énergie atomique et aux énergies alternativesInventors: Laurent Mollard, Nicolas Baier
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Patent number: 9450013Abstract: A planar photodiode array including a useful layer made of CdxHg1-xTe. The useful layer includes at least two superimposed doped layers, each interface between two doped layers forming a single PN junction; the useful layer has at least one separation region, extending from the upper face of the useful layer, and separating at least two useful volumes while going through the PN junction; and beyond a predetermined depth in the useful layer, the average cadmium concentration in the useful volumes is less than the average cadmium concentration in the separation region.Type: GrantFiled: July 9, 2015Date of Patent: September 20, 2016Assignee: Commissariat a l'energie atomique et aux energies alternativesInventors: Laurent Mollard, Francois Boulard, Guillaume Bourgeois
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Patent number: 9397244Abstract: A photodiodes array includes a useful layer made of CdxHg1-xTe; first doped zones each forming a PN junction with a second doped zone surrounding the first doped zones. The array includes regions located between two PN junctions, with a cadmium concentration gradient decreasing from the upper face to the lower face of the useful layer. A method of making such a photodiodes array includes producing, on the upper face of the useful layer, of a structured layer with at least one through opening, and with a cadmium concentration higher than the cadmium concentration in the useful layer; annealing the useful layer covered by the structured layer, with diffusion of cadmium atoms of the structured layer, from the structured layer to the useful layer; producing at least two PN junctions in the useful layer.Type: GrantFiled: April 14, 2015Date of Patent: July 19, 2016Assignee: Commissariat a' l'energie atomique et aux energies alternativesInventors: Laurent Mollard, Guillaume Bourgeois, Gerard Destefanis
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Patent number: 9269739Abstract: A device includes a substrate carrying an array of diodes, organized in rows and columns, and a peripheral substrate contact is arranged on at least one side of the array. The substrate includes one or more buried conducting lines electrically connected to the peripheral substrate contact and being positioned between at least two neighboring columns of diodes and/or between at least two neighboring rows of diodes.Type: GrantFiled: November 26, 2012Date of Patent: February 23, 2016Assignee: Commissariat à l'énergie atomique et aux énergies alternativesInventors: Laurent Mollard, Nicolas Baier, Johan Rothman
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Publication number: 20160020241Abstract: A planar photodiode array including a useful layer made of CdxHg1-xTe. The useful layer includes at least two superimposed doped layers, each interface between two doped layers forming a single PN junction; the useful layer has at least one separation region, extending from the upper face of the useful layer, and separating at least two useful volumes while going through the PN junction; and beyond a predetermined depth in the useful layer, the average cadmium concentration in the useful volumes is less than the average cadmium concentration in the separation region.Type: ApplicationFiled: July 9, 2015Publication date: January 21, 2016Applicant: Commissariat a L'Energie Atomique et aux Energies AlternativesInventors: Laurent MOLLARD, Francois Boulard, Guillaume Bourgeois
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Patent number: 9236415Abstract: The invention relates to a device comprising a substrate supporting a matrix of diodes organized in rows and columns, and a peripheral substrate contact is arranged on at least one side of the matrix, characterized in that the substrate comprises one or several buried conducting lines having no direct electrical connection with the peripheral substrate contact and being positioned between at least two adjacent columns of diodes and between at least two adjacent rows of diodes.Type: GrantFiled: May 20, 2014Date of Patent: January 12, 2016Assignee: Commissariat a l'energie atomique et aux energies alternativesInventors: Laurent Mollard, Nicolas Baier, Johan Rothman
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Publication number: 20150349151Abstract: An array of mesa photodiodes, including a useful layer of CdxHg1-xTe wherein pads are formed. The array includes a first doped zone having a first N or P doping; and second doped zones having a second P or N doping of a different type from that of the first doping, and each extending on an upper region of a pad. The first doped zone includes at least one first region having a first doping density, located at least under each of the pads; and at least one second region, located between two neighboring pads, and having a second doping density higher than the first doping density, each second region being separated from the closest second doped zone by at least one portion of the first region.Type: ApplicationFiled: May 6, 2015Publication date: December 3, 2015Applicant: Commissariat A L'Energie Atomique et aux Energies AlternativesInventors: Laurent MOLLARD, Nicolas BAIER
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Patent number: 9178101Abstract: A device including at least one heterostructure p/n diode, including a substrate based on HgCdTe including for each diode: a first part having a first cadmium concentration; a concentrated part, having a second cadmium concentration, greater than the first concentration, forming a heterostructure with the first part; a p+ doped zone situated in the concentrated part and extending into the first part, forming a p/n junction with an n-doped position of the first part, or a base plate; and the concentrated part is only located in the p+ doped zone and forms a substantially constant cadmium concentration well.Type: GrantFiled: November 26, 2012Date of Patent: November 3, 2015Assignee: Commissariat à l'énergie atomique et aux énergies alternativesInventors: Laurent Mollard, Nicolas Baier, Johan Rothman
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Publication number: 20150303322Abstract: A photodiodes array includes a useful layer made of CdxHg1-xTe; the first doped zones each forming a PN junction with a second doped zone surrounding the first doped zones. The array includes regions located between two PN junctions, with a cadmium concentration gradient decreasing from the upper face to the lower face of the useful layer. A method of making such a photodiodes array includes producing, on the upper face of the useful layer, of a structured layer with at least one through opening, and with a cadmium concentration higher than the cadmium concentration in the useful layer; annealing the useful layer covered by the structured layer, with diffusion of cadmium atoms of the structured layer, from the structured layer to the useful layer; producing at least two PN junctions in the useful layer.Type: ApplicationFiled: April 14, 2015Publication date: October 22, 2015Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Laurent MOLLARD, Guillaume BOURGEOIS, Gerard DESTEFANIS
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Publication number: 20140346539Abstract: The invention relates to a device comprising a substrate supporting a matrix (70) of diodes (Di) organised in rows and columns, and a peripheral substrate contact (75) is arranged on at least one side of the matrix (70), characterised in that the substrate comprises one or several buried conducting lines (73) having no direct electrical connection with the peripheral substrate contact and being positioned between at least two adjacent columns of diodes and between at least two adjacent rows of diodes.Type: ApplicationFiled: May 20, 2014Publication date: November 27, 2014Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Laurent Mollard, Nicolas Baier, Johan Rothman
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Publication number: 20140339570Abstract: A device includes a substrate carrying an array of diodes, organized in rows and columns, and a peripheral substrate contact is arranged on at least one side of the array. The substrate includes one or more buried conducting lines electrically connected to the peripheral substrate contact and being positioned between at least two neighbouring columns of diodes and/or between at least two neighbouring rows of diodes.Type: ApplicationFiled: November 26, 2012Publication date: November 20, 2014Applicant: Commissariat a l'energie atomique et aux ene altInventors: Laurent Mollard, Nicolas Baier, Johan Rothman
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Publication number: 20140319580Abstract: A device including at least one heterostructure p/n diode, including a substrate based on HgCdTe including for each diode: a first part having a first cadmium concentration; a concentrated part, having a second cadmium concentration, greater than the first concentration, forming a heterostructure with the first part; a p+ doped zone situated in the concentrated part and extending into the first part, forming a p/n junction with an n-doped position of the first part, or a base plate; and the concentrated part is only located in the p+ doped zone and forms a substantially constant cadmium concentration well.Type: ApplicationFiled: November 26, 2012Publication date: October 30, 2014Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALTInventors: Laurent Mollard, Nicolas Baier, Johan Rothman
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Patent number: 8377212Abstract: A chamber for annealing a semi-conductor material of II-VI type having a first area for storing an element of group II of the periodic table and a second area designed to receive the semi-conductor material of II-VI type. The chamber s equipped with a separating partition at the level of an intermediate area. This separating partition is provided with a passage aperture equipped with gas anti-reverse flow means to ensure one-way passage of the element of group II of the periodic table, in vapor phase, from the first area to the second area. This chamber is heated by heating means enabling the two areas to be heated independently.Type: GrantFiled: May 27, 2010Date of Patent: February 19, 2013Assignee: Commissariat a l'Energie Atomique et aux Energies AlternativesInventors: Laurent Mollard, Guillaume Bourgeois, Franck Henry, Bernard Pelliciari
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Publication number: 20100304576Abstract: A chamber for annealing a semi-conductor material of II-VI type having a first area for storing an element of group II of the periodic table and a second area designed to receive the semi-conductor material of II-VI type. The chamber s equipped with a separating partition at the level of an intermediate area. This separating partition is provided with a passage aperture equipped with gas anti-reverse flow means to ensure one-way passage of the element of group II of the periodic table, in vapor phase, from the first area to the second area. This chamber is heated by heating means enabling the two areas to be heated independently.Type: ApplicationFiled: May 27, 2010Publication date: December 2, 2010Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Laurent Mollard, Guillaume Bourgeois, Franck Henry, Bernard Pelliciari
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Patent number: 7559758Abstract: The invention relates to a mould for nano-printing, comprising recess and projection type patterns (12). It also comprises one or several ducts (13), each providing a communication between a mould pattern and a reservoir area (14).Type: GrantFiled: April 22, 2005Date of Patent: July 14, 2009Assignees: Commissariat a l'Energie Atomique, Centre National de la Recherche ScientifiqueInventors: Stefan Landis, Laurent Mollard, Cecile Gourgon, Jean-Herve Tortai