Patents by Inventor Laurent Savelli

Laurent Savelli has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20020024379
    Abstract: The present invention relates to a low impedance voltage source, including a first N-channel MOS transistor connected between a supply terminal and an output terminal, a second P-channel MOS transistor connected between the output terminal and a ground terminal, and a series circuit including a third diode-connected N-channel MOS transistor, a fourth diode-connected P-channel MOS transistor, a first current source connected between the supply terminal and a gate of the first transistor, and a second current source connected between the ground terminal and a gate of the second transistor, in which a well and a source of the fourth transistor are interconnected, the fourth transistor is connected to the first current source, and the third transistor is connected between the second current source and the fourth transistor.
    Type: Application
    Filed: July 15, 1999
    Publication date: February 28, 2002
    Inventor: LAURENT SAVELLI
  • Patent number: 6175262
    Abstract: The present invention relates to a booster circuit including a first P-MOS transistor, the source of which is connected to a high voltage line; a second N-MOS transistor, the drain of which is connected to a first supply potential and the source of which is connected to the drain of the first transistor; a first capacitor connected between the gate of the first transistor and a terminal of reception of a first clock signal; a second capacitor connected between the gate of the second transistor and the reception terminal for the first clock signal; a third capacitor connected between the drain of the first transistor and a reception terminal for a second clock signal, complementary to the first clock signal; two precharge diodes the first capacitor from the high voltage line; and one precharge diode for the second capacitor.
    Type: Grant
    Filed: December 31, 1997
    Date of Patent: January 16, 2001
    Assignee: SGS-Thomson Microelectronics S.A.
    Inventors: Laurent Savelli, David Novosel
  • Patent number: 6151230
    Abstract: A system of regulation of a charge pump for providing an overvoltage greater by a predetermined amount than a supply voltage, including a constant current source connected between the supply voltage and a control terminal, an N-channel MOS transistor connected between the control terminal and the ground, the gate of which is connected to receive the overvoltage, the transistor being of such dimensions that it conducts all the current provided by the constant current source when the overvoltage is greater than a maximum allowable voltage, and circuitry for limiting the overvoltage when the voltage of the control terminal is close to the ground potential.
    Type: Grant
    Filed: September 16, 1999
    Date of Patent: November 21, 2000
    Assignee: STMicroelectronics S.A.
    Inventor: Laurent Savelli
  • Patent number: 6133777
    Abstract: The selector circuit is particularly well suited to the switching over of two voltages VPP1 and VPP2, greater than the supply voltage Vcc of an integrated circuit without a priori knowledge of which of the two voltages is the highest. The selector circuit includes first and second switch circuits coupled by first and second MOS transistors whose well is biased by the output voltage of the selector circuit.
    Type: Grant
    Filed: March 5, 1999
    Date of Patent: October 17, 2000
    Assignee: STMicroelectronics S.A.
    Inventor: Laurent Savelli