Abstract: A method for bonding a first surface provided with at least one copper area surrounded by a silicon oxide area to a second surface includes an operation of treatment of the first surface by a plasma, before placing the first surface in contact with the second surface. The plasma is formed from a gas source containing a silicon oxide nitriding agent and a copper oxide reducing agent containing hydrogen. The gas source may include an N2 and NH3 and/or H2 gas mixture or a N2O and H2 gas mixture, or ammonia, which is then used both as a nitriding agent and as a reducing agent. The plasma obtained from this gas source then necessarily contains nitrogen and hydrogen, which enables, in a single operation, to provide a high-performance bonding between the first and second surfaces.

Abstract: An object including at least one graphic element, including at least one at least partly transparent substrate, at least one face of which includes recesses forming a pattern of the graphic element filled with the at least one material, the face of the substrate being fixed to at least one face of at least one support by wafer bonding, the substrate and the support forming a monolithic structure.

Abstract: To avoid problems of hydrolysis of the silicon oxide formed by PECVD at the surface of at least one wafer, it is proposed to cover, in the vacuum deposition chamber used to deposit the silicon oxide, said oxide with a temporary protective layer containing nitrogen. The protective layer thus protects the silicon oxide against the outer environment and especially against humidity when the wafer provided with the silicon oxide is stored outside of the vacuum deposition chamber. Afterwards, the protective layer is removed, for example, by chemical-mechanical. polishing, just before the two wafers are placed into contact. The protective layer may be formed by a PECVD silicon nitride deposition, by plasma nitriding or nitrogen doping of a superficial portion of the silicon oxide.

Abstract: A direct bonding method between at least a first layer (104) comprising silicon oxide having a thickness equal to or higher than about 10 nm and a second layer (108) of material having hydrophilicity, comprising at least the steps of: making the first layer (104) on a first substrate (102) such that the absorbance value of this first layer (104), at a vibration frequency of silanol bonds present in the first layer (104) equal to about 3660 cm?1, is equal to or higher than about 1.5×10?5 nm?1, the silanol bonds being formed in at least part of the thickness of the first layer (104) which is equal to or higher than about 10 nm; direct bonding between the first layer (104) and the second layer (108).

Abstract: Metallization method for a porous material including deposition of a metallic material in the liquid phase using a solution containing metal ions, the conditions consisting of the solution temperature, the pH of the solution, and the concentration of metal ions in solution being chosen to result in a deposition rate of the metallic material less than or equal to 0.1 nm/min.

Abstract: The process for the production of at least one silicon-based nanoelement (4), in particular a nanowire, comprises the following stages: providing a substrate comprising, at the surface, a first layer (1) comprising electrically doped silicon; forming, on the first layer (1), a second layer (2) based on silicon oxide with carbon atoms (3) dispersed in the said second layer (2); and exposing the first and second layers (1, 2) to an oxidizing atmosphere, so as to oxidize at least a first section (1a) of the first layer (1) at the interface of the said first layer (1) with the second layer (2) and to form the said at least one nanoelement (4) at the said first section (1a).

Abstract: A process for making an encapsulation structure comprising the following steps: 1) make at least one portion of material capable of releasing at least one gas when said material is heated, the portion of material communicating with the inside of a hermetically closed cavity of the encapsulation structure, 2) heat all or part of said portion of material such that at least part of the gas is released from said portion of material in the cavity, and in which said portion of material capable of releasing at least one gas when said material is heated comprises elements trapped in said portion of material, said trapped elements being released from said portion of material in gaseous form when said material is heated.

Abstract: A direct bonding method between at least a first layer (104) comprising silicon oxide having a thickness equal to or higher than about 10 nm and a second layer (108) of material having hydrophilicity, comprising at least the steps of: making the first layer (104) on a first substrate (102) such that the absorbance value of this first layer (104), at a vibration frequency of silanol bonds present in the first layer (104) equal to about 3660 cm?1, is equal to or higher than about 1.5×10?5 nm?1, the silanol bonds being formed in at least part of the thickness of the first layer (104) which is equal to or higher than about 10 nm; direct bonding between the first layer (104) and the second layer (108).

Abstract: A method of depositing a non-continuous coating of a first material on a substrate, comprising: a) the formation of a mask on this substrate, by forming at least two mask layers, and etching of at least one cavity in these layers, this cavity having an outline such that a coating, deposited on the substrate, through the cavities of the mask, has at least one discontinuity over said outline of the cavity; b) the deposition of the first material on the substrate, through the cavities of the mask, the coating thus deposited having at least one discontinuity over the outline of said cavity; and c) the mask is removed.

Abstract: The process for the production of at least one silicon-based nanoelement (4), in particular a nanowire, comprises the following stages: providing a substrate comprising, at the surface, a first layer (1) comprising electrically doped silicon; forming, on the first layer (1), a second layer (2) based on silicon oxide with carbon atoms (3) dispersed in the said second layer (2); and exposing the first and second layers (1, 2) to an oxidizing atmosphere, so as to oxidize at least a first section (1a) of the first layer (1) at the interface of the said first layer (1) with the second layer (2) and to form the said at least one nanoelement (4) at the said first section (1a).

Abstract: A method of forming, on a surface of a substrate, at least one hydrophilic attachment area for the purpose of self-assembling a component or a chip, in which a hydrophobic area, which delimits the hydrophilic attachment area, is produced.

Abstract: A process for making an encapsulation structure comprising the following steps: make at least one portion of material capable of releasing at least one gas when said material is heated, the portion of material communicating with the inside of a hermetically closed cavity of the encapsulation structure, heat all or part of said portion of material such that at least part of the gas is released from said portion of material in the cavity, and in which said portion of material capable of releasing at least one gas when said material is heated comprises elements trapped in said portion of material, said trapped elements being released from said portion of material in gaseous form when said material is heated.

Abstract: To avoid problems of hydrolysis of the silicon oxide formed by PECVD at the surface of at least one wafer, it is proposed to cover, in the vacuum deposition chamber used to deposit the silicon oxide, said oxide with a temporary protective layer containing nitrogen. The protective layer thus protects the silicon oxide against the outer environment and especially against humidity when the wafer provided with the silicon oxide is stored outside of the vacuum deposition chamber. Afterwards, the protective layer is removed, for example, by chemical-mechanical. polishing, just before the two wafers are placed into contact. The protective layer may be formed by a PECVD silicon nitride deposition, by plasma nitriding or nitrogen doping of a superficial portion of the silicon oxide.

Abstract: A method for bonding a first surface provided with at least one copper area surrounded by a silicon oxide area to a second surface includes an operation of treatment of the first surface by a plasma, before placing the first surface in contact with the second surface. The plasma is formed from a gas source containing a silicon oxide nitriding agent and a copper oxide reducing agent containing hydrogen. The gas source may include an N2 and NH3 and/or H2 gas mixture or a N2O and H2 gas mixture, or ammonia, which is then used both as a nitriding agent and as a reducing agent. The plasma obtained from this gas source then necessarily contains nitrogen and hydrogen, which enables, in a single operation, to provide a high-performance bonding between the first and second surfaces.

Abstract: An object including at least one graphic element, including at least one layer including at least one metal and etched according to a pattern of the graphic element, a first face of the layer being positioned opposite a face of at least one at least partly transparent substrate, a second face, opposite to the first face, of the layer being covered with at least one passivation layer fixed to at least one face of at least one support by wafer bonding and forming with the support a monolithic structure, and the layer including at least at the second face, at least one area including the metal and at least one semiconductor.

Abstract: A method of forming, on a surface of a substrate, at least one hydrophilic attachment area for the purpose of self-assembling a component or a chip, in which a hydrophobic area, which delimits the hydrophilic attachment area, is produced.

Abstract: An object including at least one graphic element, including at least one layer including at least one metal and etched according to a pattern of the graphic element, a first face of the layer being positioned opposite a face of at least one at least partly transparent substrate, a second face, opposite to the first face, of the layer being covered with at least one passivation layer fixed to at least one face of at least one support by wafer bonding and forming with the support a monolithic structure, and the layer including at least at the second face, at least one area including the metal and at least one semiconductor.

Abstract: An object including at least one graphic element, including at least one at least partly transparent substrate, at least one face of which includes recesses forming a pattern of the graphic element filled with the at least one material, the face of the substrate being fixed to at least one face of at least one support by wafer bonding, the substrate and the support forming a monolithic structure.

Abstract: A method for producing patterns in a polymer layer. Polymer sites are formed on a support. These sites are subjected to a plasma deposition of dielectric material and preferably react with this plasma so as to form openings at the level of said sites. A pattern structure is then formed in the dielectric material and/or in the polymer.

Abstract: A method of depositing a non-continuous coating of a first material on a substrate, comprising: a) the formation of a mask on this substrate, by forming at least two mask layers, and etching of at least one cavity in these layers, this cavity having an outline such that a coating, deposited on the substrate, through the cavities of the mask, has at least one discontinuity over said outline of the cavity; b) the deposition of the first material on the substrate, through the cavities of the mask, the coating thus deposited having at least one discontinuity over the outline of said cavity; and c) the mask is removed.