Abstract: The invention relates to a method of selective doping of a material by a) radiating a predetermined pre-treated pattern/region into the material, b) treating the material for producing reactive groups in the pre-treated pattern/region, and c) doping the material by the atomic layer deposition method for producing a pattern/region doped with a dopant in the material. The invention further relates to a selectively doped material, a system for preparing a selectively doped material, and use of said method.

Abstract: The invention relates to a method for doping material, the method being characterized by depositing at least one dopant deposition layer or a part thereof on the surface of the material and/or on a surface of a part or parts thereof with the atom layer deposition (ALD) method, and further processing the material coated with a dopant in such a manner that the original structure of the dopant layer is changed to obtain new properties for the doped material. The material to be doped is preferably glass, ceramic, polymer, metal, or a composite material made thereof, and the further processing of the material coated with the dopant is a mechanical, chemical, radiation, or heat treatment, whereby the aim is to change the refraction index, absorbing power, electrical and/or heat conductivity, colour, or mechanical or chemical durability of the doped material.