Patents by Inventor Laurianne RELIGIEUX

Laurianne RELIGIEUX has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10883185
    Abstract: The present invention relates to an electrolyte composition for depositing copper on a conductive surface. The composition contains a combination of 2,2?-bipyridine, imidazole, tetra-ethyl-ammonium, and a complexing agent for copper. This electrolyte makes it possible to manufacture small size copper interconnects without any void and with a filling speed that is compatible with industrial constrain. The invention also concerns a process for filling cavities with copper, and a semiconductor device that is obtained according to this process.
    Type: Grant
    Filed: December 26, 2017
    Date of Patent: January 5, 2021
    Assignee: aveni
    Inventors: Laurianne Religieux, Vincent Mevellec, Mikailou Thiam
  • Patent number: 10472726
    Abstract: The subject of the present invention is an electrolyte composition for depositing copper on semiconductor substrates covered with a barrier layer. This electrolyte contains the combination of imidazole and 2,2?-bipyridine, used as suppressor, and of thiodiglycolic acid, used as accelerator. The combination of these additives makes it possible to obtain a bottom-up filling on trenches of very small width, typically of less than 100 nm.
    Type: Grant
    Filed: August 28, 2013
    Date of Patent: November 12, 2019
    Assignee: ALCHIMER
    Inventors: Vincent Mevellec, Dominique Suhr, Laurianne Religieux
  • Publication number: 20180363158
    Abstract: The present invention relates to an electrolyte composition for depositing copper on a conductive surface. The composition contains a combination of 2,2?-bipyridine, imidazole, tetra-ethyl-ammonium, and a complexing agent for copper. This electrolyte makes it possible to manufacture small size copper interconnects without any void and with a filling speed that is compatible with industrial constrain. The invention also concerns a process for filling cavities with copper, and a semiconductor device that is obtained according to this process.
    Type: Application
    Filed: December 26, 2017
    Publication date: December 20, 2018
    Inventors: Laurianne RELIGIEUX, Vincent MEVELLEC, Mikailou THIAM
  • Patent number: 10011914
    Abstract: The present invention relates to an electrolyte composition for depositing copper on metal substrates. The composition contains a combination of two aromatic amines and an electrochemically inert cation. This electrolyte makes it possible to increase the copper nucleation density. It also allows bottom-up filling in trenches that have a very small opening dimension, typically lower than 40 nm.
    Type: Grant
    Filed: September 10, 2014
    Date of Patent: July 3, 2018
    Assignee: ALCHIMER
    Inventors: Laurianne Religieux, Paul Blondeau, Dominique Suhr
  • Publication number: 20150218724
    Abstract: The subject of the present invention is an electrolyte composition for depositing copper on semiconductor substrates covered with a barrier layer. This electrolyte contains the combination of imidazole and 2,2?-bipyridine, used as suppressor, and of thiodiglycolic acid, used as accelerator. The combination of these additives makes it possible to obtain a bottom-up filling on trenches of very small width, typically of less than 100 nm.
    Type: Application
    Filed: August 28, 2013
    Publication date: August 6, 2015
    Inventors: Vincent Mevellec, Dominique Suhr, Laurianne Religieux
  • Publication number: 20150159291
    Abstract: The present invention relates to an electrolyte composition for depositing copper on metal substrates. The composition contains a combination of two aromatic amines and an electrochemically inert cation. This electrolyte makes it possible to increase the copper nucleation density. It also allows bottom-up filling in trenches that have a very small opening dimension, typically lower than 40 nm.
    Type: Application
    Filed: September 10, 2014
    Publication date: June 11, 2015
    Inventors: Laurianne RELIGIEUX, Paul BLONDEAU, Dominique SUHR