Abstract: A MOS IC includes a first standard cell including first and second power rails, first and second active regions, and a plurality of metal interconnects. The first power rail extends in a first direction and provides a first voltage to the first standard cell. The second power rail extends in the first direction and provides a second voltage to the first standard cell. The first active region is between the first and second power rails on a first side of the first standard cell. The second active region is between the first and second power rails on a second side of the first standard cell. The second active region is separated from the first active region. The plurality of metal interconnects extend in a second direction between the first and second active regions and between the first and second power rails. The second direction is orthogonal to the first direction.

Abstract: The present disclosure provide techniques for semiconductor testing, and more particularly, to systems and methods for laser-based fault isolation and design for testability (DFT) diagnosis techniques. In one embodiment, an integrated chip (IC) testing apparatus, includes an input pin; a decompressor connected to the input pin; a plurality of scan chains, each scan chain of the plurality of scan chains comprising a plurality of scan cells; a plurality of scan chain control elements, each scan chain control element of the plurality of scan chain control elements being connected between the decompressor and a respective scan chain of the plurality of scan chains, wherein each scan chain control element is configured to enable or disable test data from flowing from the compressor to the respective scan chain; a compressor connected to an output of each scan chain of the plurality of scan chains; and an output pin connected to the compressor.

Abstract: A metal oxide semiconductor (MOS) integrated circuit (IC) has a plurality of fiducial standard cells of different cell sizes. The different cell sizes are non-equally utilized. The plurality of fiducial standard cells are placed to have a random offset from a uniform global placement pattern. Each of the fiducial standard cells has at least four power rails and various sets of active regions. The power rails extend in a first direction. The active regions are provided adjacent to the power rails but are disconnected from contacts and interconnects and thus do not draw power from the power rails. Instead, the active regions are disjoint and collinear thereby creating islands of active regions among spacings of inactive regions. These inactive regions more easily allow electromagnetic radiation to pass through thereby allowing the MOS fiducial standard cell to be visible for a CAD-to-silicon backside image alignment even with 7 nm feature sizes.

Abstract: A metal oxide semiconductor (MOS) integrated circuit (IC) has a plurality of fiducial standard cells of different cell sizes. The different cell sizes are non-equally utilized. The plurality of fiducial standard cells are placed to have a random offset from a uniform global placement pattern. Each of the fiducial standard cells has at least four power rails and various sets of active regions. The power rails extend in a first direction. The active regions are provided adjacent to the power rails but are disconnected from contacts and interconnects and thus do not draw power from the power rails. Instead, the active regions are disjoint and collinear thereby creating islands of active regions among spacings of inactive regions. These inactive regions more easily allow electromagnetic radiation to pass through thereby allowing the MOS fiducial standard cell to be visible for a CAD-to-silicon backside image alignment even with 7 nm feature sizes.

Abstract: A MOS IC includes a first standard cell including first and second power rails, first and second active regions, and a plurality of metal interconnects. The first power rail extends in a first direction and provides a first voltage to the first standard cell. The second power rail extends in the first direction and provides a second voltage to the first standard cell. The first active region is between the first and second power rails on a first side of the first standard cell. The second active region is between the first and second power rails on a second side of the first standard cell. The second active region is separated from the first active region. The plurality of metal interconnects extend in a second direction between the first and second active regions and between the first and second power rails. The second direction is orthogonal to the first direction.

Abstract: A method and apparatus for mapping an electronic device. The electronic device is loaded into a test fixture, which may be an automated test equipment (ATE). A laser beam is stepped across locations of interest. At each location of interest a minimum voltage and/or maximum frequency are computed. A contour map of the changes in minimum voltage and maximum frequency across a field of view of the electronic device is generated. Additional embodiments provide signaling a laser scan module during the rising edge of a synchronization pulse to indicate that minimum voltage (Vmin) and maximum frequency (Fmax) specification search data is provided to a laser voltage probe. A Vmin/Fmax module compares the specification search data with the data read from the laser voltage probe and computes a parameter shift value. The laser beam is moved to another location when the falling edge of the synchronization pulse occurs.

Abstract: A method and apparatus for mapping an electronic device. The electronic device is loaded into a test fixture, which may be an automated test equipment (ATE). A laser beam is stepped across locations of interest. At each location of interest a minimum voltage and/or maximum frequency are computed. A contour map of the changes in minimum voltage and maximum frequency across a field of view of the electronic device is generated. Additional embodiments provide signaling a laser scan module during the rising edge of a synchronization pulse to indicate that minimum voltage (Vmin) and maximum frequency (Fmax) specification search data is provided to a laser voltage probe. A Vmin/Fmax module compares the specification search data with the data read from the laser voltage probe and computes a parameter shift value. The laser beam is moved to another location when the falling edge of the synchronization pulse occurs.

Abstract: An integrated circuit device includes an active silicon layer, and at least one passive metal layer placed in an input region and an output region of the device. The at least one passive metal layer has a surface area and thickness for at least one of the input region or the output region to provide a phase shift of an optical laser, the phase shift corresponding to an optimized visibility of the optical laser during an optic failure analysis of the device.

Abstract: An integrated circuit is disclosed. The integrated circuit includes an insulating material layer. The integrated circuit also includes a metal structure. Furthermore, the integrated circuit includes a via through the insulating material layer that is coupled to the metal structure for testing insulating material by applying dynamic voltage switching to two adjacent metal components of the metal structure.