Patents by Inventor Lavanya SANAGAVARAPU
Lavanya SANAGAVARAPU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230400699Abstract: Disclosed is a cost-effective method to fabricate a multifunctional collimator structure for contact image sensors to filter ambient infrared light to reduce noises. In one embodiment, an optical collimator, includes: a dielectric layer; a substrate; a plurality of via holes; and a conductive layer, wherein the dielectric layer is formed over the substrate, wherein the plurality of via holes are configured as an array along a lateral direction of a first surface of the dielectric layer, wherein each of the plurality of via holes extends through the dielectric layer and the substrate from the first surface of the dielectric layer to a second surface of the substrate in a vertical direction, and wherein the conductive layer is formed over at least one of the following: the first surface of the first dielectric layer and a portion of sidewalls of each of the plurality of via holes, and wherein the conductive layer is configured so as to allow the optical collimator to filter light in a range of wavelengths.Type: ApplicationFiled: August 8, 2023Publication date: December 14, 2023Inventors: Hsin-Yu CHEN, Yen-Chiang LIU, June-Jie CHIOU, Jia-Syuan LI, You-Cheng JHANG, Shin-Hua CHEN, LAVANYA SANAGAVARAPU, Han-Zong PAN, Chun-Peng LI, Chia-Chun HUNG, Ching-Hsiang HU, Wei-Ding WU, Jui-Chun WENG, Ji-Hong CHIANG, Hsi-Cheng HSU
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Publication number: 20230359056Abstract: Disclosed is a method to fabricate a multifunctional collimator structure In one embodiment, an optical collimator, includes: a dielectric layer; a substrate; and a plurality of via holes, wherein the dielectric layer is formed over the substrate, wherein the plurality of via holes are configured as an array along a lateral direction of a first surface of the dielectric layer, wherein each of the plurality of via holes extends through the dielectric layer and the substrate from the first surface of the dielectric layer to a second surface of the substrate in a vertical direction, wherein the substrate has a bulk impurity doping concentration equal to or greater than 1×1019 per cubic centimeter (cm?3) and a first thickness, and wherein the bulk impurity doping concentration and the first thickness of the substrate are configured so as to allow the optical collimator to filter light in a range of wavelengths.Type: ApplicationFiled: July 14, 2023Publication date: November 9, 2023Inventors: Hsin-Yu CHEN, Chun-Peng LI, Chia-Chun HUNG, Ching-Hsiang HU, Wei-Ding WU, Jui-Chun WENG, JI-Hong CHIANG, Yen-Chiang LIU, Jiun-Jie CHIOU, Li-Yang TU, Jia-Syuan LI, You-Cheng JHANG, Shin-Hua CHEN, Lavanya SANAGAVARAPU, Han-Zong PAN, Hsi-Cheng HSU
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Patent number: 11782284Abstract: Disclosed is a cost-effective method to fabricate a multifunctional collimator structure for contact image sensors to filter ambient infrared light to reduce noises. In one embodiment, an optical collimator, includes: a dielectric layer; a substrate; a plurality of via holes; and a conductive layer, wherein the dielectric layer is formed over the substrate, wherein the plurality of via holes are configured as an array along a lateral direction of a first surface of the dielectric layer, wherein each of the plurality of via holes extends through the dielectric layer and the substrate from the first surface of the dielectric layer to a second surface of the substrate in a vertical direction.Type: GrantFiled: August 8, 2022Date of Patent: October 10, 2023Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Hsin-Yu Chen, Yen-Chiang Liu, Jiun-Jie Chiou, Jia-Syuan Li, You-Cheng Jhang, Shin-Hua Chen, Lavanya Sanagavarapu, Han-Zong Pan, Chun-Peng Li, Chia-Chun Hung, Ching-Hsiang Hu, Wei-Ding Wu, Jui-Chun Weng, Ji-Hong Chiang, Hsi-Cheng Hsu
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Publication number: 20230264945Abstract: A micro-electromechanical-system (MEMS) device may be formed to include an anti-stiction polysilicon layer on one or more moveable MEMS structures of a device wafer of the MEMS device to reduce, minimize, and/or eliminate stiction between the moveable MEMS structures and other components or structures of the MEMS device. The anti-stiction polysilicon layer may be formed such that a surface roughness of the anti-stiction polysilicon layer is greater than the surface roughness of a bonding polysilicon layer on the surfaces of the device wafer that are to be bonded to a circuitry wafer of the MEMS device. The higher surface roughness of the anti-stiction polysilicon layer may reduce the surface area of the bottom of the moveable MEMS structures, which may reduce the likelihood that the one or more moveable MEMS structures will become stuck to the other components or structures.Type: ApplicationFiled: April 28, 2023Publication date: August 24, 2023Inventors: Hsi-Cheng HSU, Kuo-Hao LEE, Jui-Chun WENG, Ching-Hsiang HU, Ji-Hong CHIANG, Lavanya SANAGAVARAPU, Chia-Yu LIN, Chia-Chun HUNG, Jia-Syuan LI, Yu-Pei CHIANG
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Patent number: 11726342Abstract: Disclosed is a method to fabricate a multifunctional collimator structure In one embodiment, an optical collimator, includes: a dielectric layer; a substrate; and a plurality of via holes, wherein the dielectric layer is formed over the substrate, wherein the plurality of via holes are configured as an array along a lateral direction of a first surface of the dielectric layer, wherein each of the plurality of via holes extends through the dielectric layer and the substrate from the first surface of the dielectric layer to a second surface of the substrate in a vertical direction, wherein the substrate has a bulk impurity doping concentration equal to or greater than 1×1019 per cubic centimeter (cm?3) and a first thickness, and wherein the bulk impurity doping concentration and the first thickness of the substrate are configured so as to allow the optical collimator to filter light in a range of wavelengths.Type: GrantFiled: August 4, 2022Date of Patent: August 15, 2023Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Hsin-Yu Chen, Chun-Peng Li, Chia-Chun Hung, Ching-Hsiang Hu, Wei-Ding Wu, Jui-Chun Weng, Ji-Hong Chiang, Yen Chiang Liu, Jiun-Jie Chiou, Li-Yang Tu, Jia-Syuan Li, You-Cheng Jhang, Shin-Hua Chen, Lavanya Sanagavarapu, Han-Zong Pan, Hsi-Cheng Hsu
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Patent number: 11655138Abstract: A micro-electromechanical-system (MEMS) device may be formed to include an anti-stiction polysilicon layer on one or more moveable MEMS structures of a device wafer of the MEMS device to reduce, minimize, and/or eliminate stiction between the moveable MEMS structures and other components or structures of the MEMS device. The anti-stiction polysilicon layer may be formed such that a surface roughness of the anti-stiction polysilicon layer is greater than the surface roughness of a bonding polysilicon layer on the surfaces of the device wafer that are to be bonded to a circuitry wafer of the MEMS device. The higher surface roughness of the anti-stiction polysilicon layer may reduce the surface area of the bottom of the moveable MEMS structures, which may reduce the likelihood that the one or more moveable MEMS structures will become stuck to the other components or structures.Type: GrantFiled: May 4, 2021Date of Patent: May 23, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Hsi-Cheng Hsu, Kuo-Hao Lee, Jui-Chun Weng, Ching-Hsiang Hu, Ji-Hong Chiang, Lavanya Sanagavarapu, Chia-Yu Lin, Chia-Chun Hung, Jia-Syuan Li, Yu-Pei Chiang
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Publication number: 20220382069Abstract: Disclosed is a cost-effective method to fabricate a multifunctional collimator structure for contact image sensors to filter ambient infrared light to reduce noises. In one embodiment, an optical collimator, includes: a dielectric layer; a substrate; a plurality of via holes; and a conductive layer, wherein the dielectric layer is formed over the substrate, wherein the plurality of via holes are configured as an array along a lateral direction of a first surface of the dielectric layer, wherein each of the plurality of via holes extends through the dielectric layer and the substrate from the first surface of the dielectric layer to a second surface of the substrate in a vertical direction, and wherein the conductive layer is formed over at least one of the following: the first surface of the first dielectric layer and a portion of sidewalls of each of the plurality of via holes, and wherein the conductive layer is configured so as to allow the optical collimator to filter light in a range of wavelengths.Type: ApplicationFiled: August 8, 2022Publication date: December 1, 2022Inventors: Hsin-Yu CHEN, Yen-Chiang Liu, Jiun-Jie Chiou, Jia-Syuan Li, You-Cheng Jhang, Shin-Hua Chen, Lavanya Sanagavarapu, Han-Zong Pan, Chun-Peng Li, Chia-Chun Hung, Ching-Hsiang Hu, Wei-Ding Wu, Jui-Chun Weng, Ji-Hong Chiang, Hsi-Cheng Hsu
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Publication number: 20220373815Abstract: Disclosed is a method to fabricate a multifunctional collimator structure In one embodiment, an optical collimator, includes: a dielectric layer; a substrate; and a plurality of via holes, wherein the dielectric layer is formed over the substrate, wherein the plurality of via holes are configured as an array along a lateral direction of a first surface of the dielectric layer, wherein each of the plurality of via holes extends through the dielectric layer and the substrate from the first surface of the dielectric layer to a second surface of the substrate in a vertical direction, wherein the substrate has a bulk impurity doping concentration equal to or greater than 1×1019 per cubic centimeter (cm?3) and a first thickness, and wherein the bulk impurity doping concentration and the first thickness of the substrate are configured so as to allow the optical collimator to filter light in a range of wavelengths.Type: ApplicationFiled: August 4, 2022Publication date: November 24, 2022Inventors: Hsin-Yu CHEN, Chun-Peng LI, Chia-Chun HUNG, Ching-Hsiang HU, Wei-Ding WU, Jui-Chun WENG, Ji-Hong CHIANG, Yen-Chiang LIU, Jiun-Jie CHIOU, Li-Yang TU, Jia-Syuan LI, You-Cheng JHANG, Shin-Hua CHEN, Lavanya SANAGAVARAPU, Han-Zong PAN, Hsi-Cheng HSU
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Patent number: 11454820Abstract: Disclosed is a cost-effective method to fabricate a multifunctional collimator structure for contact image sensors to filter ambient infrared light to reduce noises. In one embodiment, an optical collimator, includes: a dielectric layer; a substrate; a plurality of via holes; and a conductive layer, wherein the dielectric layer is formed over the substrate, wherein the plurality of via holes are configured as an array along a lateral direction of a first surface of the dielectric layer, wherein each of the plurality of via holes extends through the dielectric layer and the substrate from the first surface of the dielectric layer to a second surface of the substrate in a vertical direction.Type: GrantFiled: October 17, 2019Date of Patent: September 27, 2022Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Hsin-Yu Chen, Yen-Chiang Liu, Jiun-Jie Chiou, Jia-Syuan Li, You-Cheng Jhang, Shin-Hua Chen, Lavanya Sanagavarapu, Han-Zong Pan, Chun-Peng Li, Chia-Chun Hung, Ching-Hsiang Hu, Wei-Ding Wu, Jui-Chun Weng, Ji-Hong Chiang, Hsi-Cheng Hsu
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Patent number: 11448891Abstract: Disclosed is a method to fabricate a multifunctional collimator structure In one embodiment, an optical collimator, includes: a dielectric layer; a substrate; and a plurality of via holes, wherein the dielectric layer is formed over the substrate, wherein the plurality of via holes are configured as an array along a lateral direction of a first surface of the dielectric layer, wherein each of the plurality of via holes extends through the dielectric layer and the substrate from the first surface of the dielectric layer to a second surface of the substrate in a vertical direction, wherein the substrate has a bulk impurity doping concentration equal to or greater than 1×1019 per cubic centimeter (cm?3) and a first thickness, and wherein the bulk impurity doping concentration and the first thickness of the substrate are configured so as to allow the optical collimator to filter light in a range of wavelengths.Type: GrantFiled: October 17, 2019Date of Patent: September 20, 2022Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Hsin-Yu Chen, Chun-Peng Li, Chia-Chun Hung, Ching-Hsiang Hu, Wei-Ding Wu, Jui-Chun Weng, Ji-Hong Chiang, Yen-Chiang Liu, Jiun-Jie Chiou, Li-Yang Tu, Jia-Syuan Li, You-Cheng Jhang, Shin-Hua Chen, Lavanya Sanagavarapu, Han-Zong Pan, Hsi-Cheng Hsu
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Publication number: 20220242724Abstract: A method for treating a micro electro-mechanical system (MEMS) component is disclosed. In one example, the method includes the steps of providing a first wafer, treating the first wafer to form cavities and at least an oxide layer on a top surface of the first wafer using a first chemical vapor deposition (CVD) process, providing a second wafer, bonding the second wafer on a top surface of the at least one oxide layer, treating the second wafer to form a first plurality of structures, depositing a layer of Self-Assembling Monolayer (SAM) to a surface of the MEMS component using a second CVD process.Type: ApplicationFiled: April 13, 2022Publication date: August 4, 2022Inventors: Jui-Chun WENG, Lavanya SANAGAVARAPU, Ching-Hsiang HU, Wei-Ding WU, Shyh-Wei CHENG, Ji-Hong CHIANG, Hsin-Yu CHEN, Hsi-Cheng HSU
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Publication number: 20220135397Abstract: A micro-electromechanical-system (MEMS) device may be formed to include an anti-stiction polysilicon layer on one or more moveable MEMS structures of a device wafer of the MEMS device to reduce, minimize, and/or eliminate stiction between the moveable MEMS structures and other components or structures of the MEMS device. The anti-stiction polysilicon layer may be formed such that a surface roughness of the anti-stiction polysilicon layer is greater than the surface roughness of a bonding polysilicon layer on the surfaces of the device wafer that are to be bonded to a circuitry wafer of the MEMS device. The higher surface roughness of the anti-stiction polysilicon layer may reduce the surface area of the bottom of the moveable MEMS structures, which may reduce the likelihood that the one or more moveable MEMS structures will become stuck to the other components or structures.Type: ApplicationFiled: May 4, 2021Publication date: May 5, 2022Inventors: Hsi-Cheng HSU, Kuo-Hao LEE, Jui-Chun WENG, Ching-Hsiang HU, Ji-Hong CHIANG, Lavanya SANAGAVARAPU, Chia-Yu LIN, Chia-Chun HUNG, Jia-Syuan LI, Yu-Pei CHIANG
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Patent number: 11305980Abstract: A method for treating a micro electro-mechanical system (MEMS) component is disclosed. In one example, the method includes the steps of providing a first wafer, treating the first wafer to form cavities and at least an oxide layer on a top surface of the first wafer using a first chemical vapor deposition (CVD) process, providing a second wafer, bonding the second wafer on a top surface of the at least one oxide layer, treating the second wafer to form a first plurality of structures, depositing a layer of Self-Assembling Monolayer (SAM) to a surface of the MEMS component using a second CVD process.Type: GrantFiled: December 17, 2019Date of Patent: April 19, 2022Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Jui-Chun Weng, Lavanya Sanagavarapu, Ching-Hsiang Hu, Wei-Ding Wu, Shyh-Wei Cheng, Ji-Hong Chiang, Hsin-Yu Chen, Hsi-Cheng Hsu
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Publication number: 20210116714Abstract: Disclosed is a cost-effective method to fabricate a multifunctional collimator structure for contact image sensors to filter ambient infrared light to reduce noises. In one embodiment, an optical collimator, includes: a dielectric layer; a substrate; a plurality of via holes; and a conductive layer, wherein the dielectric layer is formed over the substrate, wherein the plurality of via holes are configured as an array along a lateral direction of a first surface of the dielectric layer, wherein each of the plurality of via holes extends through the dielectric layer and the substrate from the first surface of the dielectric layer to a second surface of the substrate in a vertical direction, and wherein the conductive layer is formed over at least one of the following: the first surface of the first dielectric layer and a portion of sidewalls of each of the plurality of via holes, and wherein the conductive layer is configured so as to allow the optical collimator to filter light in a range of wavelengths.Type: ApplicationFiled: October 17, 2019Publication date: April 22, 2021Inventors: Hsin-Yu CHEN, Yen-Chiang LIU, Jiun-Jie CHIOU, Jia-Syuan LI, You-Cheng JHANG, Shin-Hua CHEN, Lavanya SANAGAVARAPU, Han-Zong PAN, Chun-Peng LI, Chia-Chun HUNG, Ching-Hsiang HU, Wei-Ding WU, Jui-Chun WENG, Ji-Hong CHIANG, Hsi-Cheng HSU
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Publication number: 20210116713Abstract: Disclosed is a method to fabricate a multifunctional collimator structure In one embodiment, an optical collimator, includes: a dielectric layer; a substrate; and a plurality of via holes, wherein the dielectric layer is formed over the substrate, wherein the plurality of via holes are configured as an array along a lateral direction of a first surface of the dielectric layer, wherein each of the plurality of via holes extends through the dielectric layer and the substrate from the first surface of the dielectric layer to a second surface of the substrate in a vertical direction, wherein the substrate has a bulk impurity doping concentration equal to or greater than 1×1019 per cubic centimeter (cm?3) and a first thickness, and wherein the bulk impurity doping concentration and the first thickness of the substrate are configured so as to allow the optical collimator to filter light in a range of wavelengths.Type: ApplicationFiled: October 17, 2019Publication date: April 22, 2021Inventors: Hsin-Yu CHEN, Chun-Peng LI, Chia-Chun HUNG, Ching-Hsiang HU, Wei-Ding WU, Jui-Chun WENG, Ji-Hong CHIANG, Yen-Chiang LIU, Jiun-Jie CHIOU, Li-Yang TU, Jia-Syuan LI, You-Cheng JHANG, Shin-Hua CHEN, Lavanya SANAGAVARAPU, Han-Zong PAN, Hsi-Cheng HSU
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Publication number: 20200123003Abstract: A method for treating a micro electro-mechanical system (MEMS) component is disclosed. In one example, the method includes the steps of providing a first wafer, treating the first wafer to form cavities and at least an oxide layer on a top surface of the first wafer using a first chemical vapor deposition (CVD) process, providing a second wafer, bonding the second wafer on a top surface of the at least one oxide layer, treating the second wafer to form a first plurality of structures, depositing a layer of Self-Assembling Monolayer (SAM) to a surface of the MEMS component using a second CVD process.Type: ApplicationFiled: December 17, 2019Publication date: April 23, 2020Inventors: Jui-Chun Weng, Lavanya Sanagavarapu, Ching-Hsiang Hu, Wei-Ding Wu, Shyh-Wei Cheng, Ji-Hong Chiang, Hsin-Yu Chen, Hsi-Cheng Hsu
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Patent number: 10513432Abstract: A method for treating a micro electro-mechanical system (MEMS) component is disclosed. In one example, the method includes the steps of providing a first wafer, treating the first wafer to form cavities and at least an oxide layer on a top surface of the first wafer using a first chemical vapor deposition (CVD) process, providing a second wafer, bonding the second wafer on a top surface of the at least one oxide layer, treating the second wafer to form a first plurality of structures, depositing a layer of Self-Assembling Monolayer (SAM) to a surface of the MEMS component using a second CVD process.Type: GrantFiled: February 23, 2018Date of Patent: December 24, 2019Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Jui-Chun Weng, Lavanya Sanagavarapu, Ching-Hsiang Hu, Wei-Ding Wu, Shyh-Wei Cheng, Ji-Hong Chiang, Hsin-Yu Chen, Hsi-Cheng Hsu
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Publication number: 20190031503Abstract: A method for treating a micro electro-mechanical system (MEMS) component is disclosed. In one example, the method includes the steps of providing a first wafer, treating the first wafer to form cavities and at least an oxide layer on a top surface of the first wafer using a first chemical vapor deposition (CVD) process, providing a second wafer, bonding the second wafer on a top surface of the at least one oxide layer, treating the second wafer to form a first plurality of structures, depositing a layer of Self-Assembling Monolayer (SAM) to a surface of the MEMS component using a second CVD process.Type: ApplicationFiled: February 23, 2018Publication date: January 31, 2019Inventors: Jui-Chun WENG, Lavanya SANAGAVARAPU, Ching-Hsiang HU, Wei-Ding WU, Shyh-Wei CHENG, Ming-De CHEN, Ji-Hong CHIANG, Hsin-Yu CHEN, Hsi-Cheng HSU