Patents by Inventor Lavy Shavit

Lavy Shavit has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Charged particle beam source and a method for assembling a charged particle beam source
    Patent number: 11189451
    Abstract: A charged particle beam source that may include an emitter that has a tip for emitting charged particles; a socket; electrodes; a filament that is connected to the electrodes and to the emitter; electrodes for providing electrical signals to the filament; a support element that is connected to the emitter; and a support structure that comprises one or more interfaces for contacting only a part of the support element while supporting the support element.
    Type: Grant
    Filed: December 2, 2020
    Date of Patent: November 30, 2021
    Assignee: APPLIED MATERIALS ISRAEL LTD.
    Inventors: Itay Asulin, Ofer Yuli, Lavy Shavit, Yoram Uziel, Guy Eytan, Natan Schlimoff, Igor Krivts (Krayvitz), Jacob Levin, Israel Avneri
  • CHARGED PARTICLE BEAM SOURCE AND A METHOD FOR ASSEMBLING A CHARGED PARTICLE BEAM SOURCE
    Publication number: 20210175040
    Abstract: A charged particle beam source that may include an emitter that has a tip for emitting charged particles; a socket; electrodes; a filament that is connected to the electrodes and to the emitter; electrodes for providing electrical signals to the filament; a support element that is connected to the emitter; and a support structure that comprises one or more interfaces for contacting only a part of the support element while supporting the support element.
    Type: Application
    Filed: December 2, 2020
    Publication date: June 10, 2021
    Applicant: APPLIED MATERIALS ISRAEL LTD.
    Inventors: Itay Asulin, Ofer Yuli, Lavy Shavit, Yoram Uziel, Guy Eytan, Natan Schlimoff, Igor Krivts (Krayvitz), Jacob Levin, Israel Avneri
  • Charged particle beam source and a method for assembling a charged particle beam source
    Patent number: 10886092
    Abstract: A charged particle beam source that may include an emitter that has a tip for emitting charged particles; a socket; electrodes; a filament that is connected to the electrodes and to the emitter; electrodes for providing electrical signals to the filament; a support element that is connected to the emitter; and a support structure that comprises one or more interfaces for contacting only a part of the support element while supporting the support element.
    Type: Grant
    Filed: April 3, 2020
    Date of Patent: January 5, 2021
    Assignee: APPLIED MATERIALS ISRAEL LTD.
    Inventors: Itay Asulin, Ofer Yuli, Lavy Shavit, Yoram Uziel, Guy Eytan, Natan Schlimoff, Igor Krivts (Krayvitz), Jacob Levin, Israel Avneri
  • CHARGED PARTICLE BEAM SOURCE AND A METHOD FOR ASSEMBLING A CHARGED PARTICLE BEAM SOURCE
    Publication number: 20200234907
    Abstract: A charged particle beam source that may include an emitter that has a tip for emitting charged particles; a socket; electrodes; a filament that is connected to the electrodes and to the emitter; electrodes for providing electrical signals to the filament; a support element that is connected to the emitter; and a support structure that comprises one or more interfaces for contacting only a part of the support element while supporting the support element.
    Type: Application
    Filed: April 3, 2020
    Publication date: July 23, 2020
    Applicant: APPLIED MATERIALS ISRAEL LTD.
    Inventors: Itay Asulin, Ofer Yuli, Lavy Shavit, Yoram Uziel, Guy Eytan, Natan Schlimoff, Igor Krivts (Krayvitz), Jacob Levin, Israel Avneri
  • System and method for temperature control of a semiconductor wafer
    Patent number: 9111971
    Abstract: A semiconductor wafer is received at a first chamber that is at a first pressure level. The semiconductor wafer is at a first temperature and is heated, by a first heating module, to a second temperature while the pressure level of the first chamber is reduced from the first pressure level to a second pressure level. The semiconductor wafer is then provided to a supporting element of a second chamber which maintains a third pressure level that is closer to the second pressure level than to the first pressure level; the supporting element being at a third temperature that is closer to the second temperature than to the first temperature.
    Type: Grant
    Filed: July 30, 2012
    Date of Patent: August 18, 2015
    Assignee: APPLIED MATERIALS ISRAEL, LTD.
    Inventors: Lavy Shavit, Rafi Kraus, Itzak Yair, Samuel Nackash, Yuri Belenky
  • SYSTEM AND METHOD FOR TEMPERATURE CONTROL OF A SEMICONDUCTOR WAFER
    Publication number: 20140027437
    Abstract: A semiconductor wafer is received at a first chamber that is at a first pressure level. The semiconductor wafer is at a first temperature and is heated, by a first heating module, to a second temperature while the pressure level of the first chamber is reduced from the first pressure level to a second pressure level. The semiconductor wafer is then provided to a supporting element of a second chamber which maintains a third pressure level that is closer to the second pressure level than to the first pressure level; the supporting element being at a third temperature that is closer to the second temperature than to the first temperature.
    Type: Application
    Filed: July 30, 2012
    Publication date: January 30, 2014
    Inventors: Lavy Shavit, Rafi Kraus, Itzak Yair, Samuel Nackash, Yuri Belenky