Patents by Inventor Lawrance Sheu
Lawrance Sheu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8795486Abstract: A PVD target structure for use in physical vapor deposition. The PVD target structure includes a consumable slab of source material and one or more detectors for indicating when the slab of source material is approaching or has been reduced to a given quantity representing a service lifetime endpoint of the target structure.Type: GrantFiled: June 29, 2006Date of Patent: August 5, 2014Assignee: Taiwan semiconductor Manufacturing Company, Ltd.Inventors: Yi-Li Hsiao, Jerry Hwang, Jyh-Cherng Sheu, Lawrance Sheu, Jean Wang, Chen-Hua Yu
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Patent number: 8276648Abstract: A method for forming a tube-based detector for signaling when a PVD target is reduced to a predetermined quantity of the PVD target material includes providing a mold member having an inner molding member and an outer molding member defining a space therebetween, melting a desired tube material, injecting the molten tube material into the space between the inner molding member and the outer molding member, cooling the molten tube material, removing the tube from the mold member after the molten tube material has cooled and solidified into a tube, embedding the tube in the physical vapor deposition target, wherein the tube forms an enclosure of the tube-based detector.Type: GrantFiled: January 24, 2012Date of Patent: October 2, 2012Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yi-Li Hsiao, Chen-Hua Yu, Jean Wang, Lawrance Sheu
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Publication number: 20120131784Abstract: A method for forming a tube-based detector for signaling when a PVD target is reduced to a predetermined quantity of the PVD target material includes providing a mold member having an inner molding member and an outer molding member defining a space therebetween, melting a desired tube material, injecting the molten tube material into the space between the inner molding member and the outer molding member, cooling the molten tube material, removing the tube from the mold member after the molten tube material has cooled and solidified into a tube, embedding the tube in the physical vapor deposition target, wherein the tube forms an enclosure of the tube-based detector.Type: ApplicationFiled: January 24, 2012Publication date: May 31, 2012Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yi-Li Hsiao, Chen-Hua Yu, Jean Wang, Lawrance Sheu
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Patent number: 8101052Abstract: An adjustable anode assembly for a wet processing apparatus to allow selective tuning of the electrical field density distribution within a wet process chemical of the apparatus, which in turn allows the process specification or specifications to be selectively varied across the process surface of a wafer when processed by the apparatus. The adjustable anode assembly includes an anode which may be divided into several plates, at least one of which is capable of being moved from a first plane to at least a second plane.Type: GrantFiled: November 27, 2006Date of Patent: January 24, 2012Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yi-Li Hsiao, Chen-Hua Yu, Jean Wang, Lawrance Sheu
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Publication number: 20110126397Abstract: A PVD target structure for use in physical vapor deposition. The PVD target structure includes a consumable slab of source material and one or more detectors for indicating when the slab of source material is approaching or has been reduced to a given quantity representing a service lifetime endpoint of the target structure. Each detector includes an enclosure which may be made by forming a plurality of bores in a bulk material and separating the bulk material into a plurality of discrete enclosure units each including one of the bores. Alternatively, the enclosure of the detector may be made using a mold having one or more mold members and an extrusion, casting, electrical chemical plating, and/or sheet forming method.Type: ApplicationFiled: February 7, 2011Publication date: June 2, 2011Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Yi-Li Hsiao, Chen-Hua Yu, Jean Wang, Lawrance Sheu
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Patent number: 7891536Abstract: A PVD target structure for use in physical vapor deposition. The PVD target structure includes a consumable slab of source material and one or more detectors for indicating when the slab of source material is approaching or has been reduced to a given quantity representing a service lifetime endpoint of the target structure. Each detector includes an enclosure which may be made by forming a plurality of bores in a bulk material and separating the bulk material into a plurality of discrete enclosure units each including one of the bores. Alternatively, the enclosure of the detector may be made using a mold having one or more mold members and an extrusion, casting, electrical chemical plating, and/or sheet forming method.Type: GrantFiled: June 29, 2006Date of Patent: February 22, 2011Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yi-Li Hsiao, Chen-Hua Yu, Jean Wang, Lawrance Sheu
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Patent number: 7829815Abstract: A adjustable upper coil or electrode for a reaction chamber apparatus useable in semiconductor processing, is constructed so that its shape may be selectively changed or so at least two portions thereof may be selectively driven at different power and/or frequencies. The adjustable upper coil or electrode, therefore, enables the plasma density distribution in the reaction chamber apparatus to be selectively controlled.Type: GrantFiled: September 22, 2006Date of Patent: November 9, 2010Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Ying-Lin Chen, Chi-An Kao, Po-Zen Chen, Yi-Li Hsiao, Chen-Hua Yu, Jean Wang, Lawrance Sheu
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Patent number: 7642100Abstract: A semiconductor processing method includes processing a first substrate while detecting at least one first processing parameter value in a first apparatus. The first processing parameter is analyzed, thereby yielding at least one first predicted parameter value. The first predicted parameter value is compared with a first pre-defined parameter value, thereby yielding at least one first comparison result. A first recipe is applied corresponding to the first comparison result for processing a second substrate in the first apparatus.Type: GrantFiled: November 14, 2006Date of Patent: January 5, 2010Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chen-Hua Yu, Lawrance Sheu, Yi-Li Hsiao, Francis Ko
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Publication number: 20080121526Abstract: An adjustable anode assembly for a wet processing apparatus to allow selective tuning of the electrical field density distribution within a wet process chemical of the apparatus, which in turn allows the process specification or specifications to be selectively varied across the process surface of a wafer when processed by the apparatus. The adjustable anode assembly includes an anode which may be divided into several plates, at least one of which is capable of being moved from a first plane to at least a second plane.Type: ApplicationFiled: November 27, 2006Publication date: May 29, 2008Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Yi-Li Hsiao, Chen-Hua Yu, Jean Wang, Lawrance Sheu
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Publication number: 20080083710Abstract: A adjustable upper coil or electrode for a reaction chamber apparatus useable in semiconductor processing, is constructed so that its shape may be selectively changed or so at least two portions thereof may be selectively driven at different power and/or frequencies. The adjustable upper coil or electrode, therefore, enables the plasma density distribution in the reaction chamber apparatus to be selectively controlled.Type: ApplicationFiled: September 22, 2006Publication date: April 10, 2008Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Ying-Lin Chen, Chi-An Kao, Po-Zen Chen, Yi-Li Hsiao, Chen-Hua Yu, Jean Wang, Lawrance Sheu
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Publication number: 20080064127Abstract: A semiconductor processing method includes processing a first substrate while detecting at least one first processing parameter value in a first apparatus. The first processing parameter is analyzed, thereby yielding at least one first predicted parameter value. The first predicted parameter value is compared with a first pre-defined parameter value, thereby yielding at least one first comparison result. A first recipe is applied corresponding to the first comparison result for processing a second substrate in the first apparatus.Type: ApplicationFiled: November 14, 2006Publication date: March 13, 2008Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chen-Hua Yu, Lawrance Sheu, Yi-Li Hsiao, Francis Ko
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Publication number: 20070163716Abstract: A gas distribution apparatus includes a first plate and a second plate comprising a plurality of first openings and second openings, respectively. The second plate is disposed in overlapping relation with the first plate. Overlaps of the first openings and the second openings form third openings, which provide a first gas distribution pattern at a first orientation of the plates relative to one another and a second gas distribution pattern at a second orientation different than the first orientation.Type: ApplicationFiled: January 19, 2006Publication date: July 19, 2007Inventors: Yi-Li Hsiao, Chen-Hua Yu, Jean Wang, Lawrance Sheu
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Publication number: 20070068803Abstract: A PVD target structure for use in physical vapor deposition. The PVD target structure includes a consumable slab of source material and one or more detectors for indicating when the slab of source material is approaching or has been reduced to a given quantity representing a service lifetime endpoint of the target structure.Type: ApplicationFiled: June 29, 2006Publication date: March 29, 2007Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yi-Li Hsiao, Jerry Hwang, Jyh-Cherng Sheu, Lawrance Sheu, Jean Wang, Chen-Hua Yu
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Publication number: 20070068804Abstract: A PVD target structure for use in physical vapor deposition. The PVD target structure includes a consumable slab of source material and one or more detectors for indicating when the slab of source material is approaching or has been reduced to a given quantity representing a service lifetime endpoint of the target structure. Each detector includes an enclosure which may be made by forming a plurality of bores in a bulk material and separating the bulk material into a plurality of discrete enclosure units each including one of the bores. Alternatively, the enclosure of the detector may be made using a mold having one or more mold members and an extrusion, casting, electrical chemical plating, and/or sheet forming method.Type: ApplicationFiled: June 29, 2006Publication date: March 29, 2007Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yi-Li Hsiao, Chen-Hua Yu, Jean Wang, Lawrance Sheu
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Publication number: 20070068796Abstract: A method and system for detecting a lifetime of a slab of consumable material used by a process tool. In the method and system, the slab of consumable material is provided with at least one indicator. A determination is made as to whether a value of a signal generated by a detector associated with the at least one indicator during operation of the process tool is equal to a warning setting value, is between the warning setting value and an alarm setting value, is equal to an alarm setting value, or is above the alarm setting value. A first warning is provided if the value of the signal is equal to the warning setting value or between the warning setting value and the alarm setting value, the first warning indicating that the slab of consumable material is approaching a predetermined quantity which is less than an original quantity of the slab of consumable material.Type: ApplicationFiled: August 9, 2006Publication date: March 29, 2007Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yi-Li Hsiao, Chen-Hua Yu, Jean Wang, Lawrance Sheu
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Publication number: 20050245082Abstract: A method for removing organic material from an opening in a low k dielectric layer and above a metal layer on a substrate is disclosed. An ozone water solution comprised of one or more additives such as hydroxylamine or an ammonium salt is applied as a spray or by immersion. A chelating agent may be added to protect the metal layer from oxidation. A diketone may be added to the ozone water solution or applied in a gas or liquid phase in a subsequent step to remove any metal oxide that forms during the ozone treatment. A supercritical fluid mixture that includes CO2 and ozone can be used to remove organic residues that are not easily stripped by one of the aforementioned liquid solutions. The removal method prevents changes in the dielectric constant and refractive index of the low k dielectric layer and cleanly removes residues which improve device performance.Type: ApplicationFiled: April 28, 2004Publication date: November 3, 2005Inventors: Baw-Ching Perng, Yi-Chen Huang, Jun-Lung Huang, Bor-Wen Chan, Peng-Fu Hsu, Hsin-Ching Shih, Lawrance Sheu, Hun-Jan Tao