Abstract: Systems, apparatuses and methods of adaptively controlling a cache operating voltage are provided that comprise receiving indications of a plurality of cache usage amounts. Each cache usage amount corresponds to an amount of data to be accessed in a cache by one of a plurality of portions of a data processing application. The plurality of cache usage amounts are determining based on the received indications of the plurality of cache usage amounts. A voltage level applied to the cache is adaptively controlled based on one or more of the plurality of determined cache usage amounts. Memory access to the cache is controlled to be directed to a non-failing portion of the cache at the applied voltage level.

Abstract: Systems, apparatuses and methods of adaptively controlling a cache operating voltage are provided that comprise receiving indications of a plurality of cache usage amounts. Each cache usage amount corresponds to an amount of data to be accessed in a cache by one of a plurality of portions of a data processing application. The plurality of cache usage amounts are determining based on the received indications of the plurality of cache usage amounts. A voltage level applied to the cache is adaptively controlled based on one or more of the plurality of determined cache usage amounts. Memory access to the cache is controlled to be directed to a non-failing portion of the cache at the applied voltage level.

Abstract: Various through silicon via capacitors and methods of fabricating the same are disclosed. In one aspect, an apparatus is provided that includes a semiconductor substrate with a portion doped with a first impurity type and a doped region of a second impurity type in the portion of the semiconductor substrate. The doped region is operable to function as a first capacitor plate. A first via hole is in the doped region. The first via hole has a first sidewall. A first insulating layer is on the first sidewall. The first insulating layer is operable to function as a capacitor dielectric. A first conductive via is in the first via hole. The first conductive via is operable to function as a second capacitor plate.

Abstract: A method of forming an electrical conductor, comprising forming electrically conductive segments incorporating electromigration-inhibiting plugs. A row of windows is formed in a planar surface and electromigraation-inhibiting material is deposited over the planar surface and into the windows to provide electromigration-inhibiting plugs in the windows. The plugs may be formed by depositing an electromigration-inhibiting liner in the windows and then depositing electrically conductive material to fill the windows. Portions of either or both of the plugs and conductive segments are removed such that the plugs and conductive segments have a coplanar surface. The plugs may be formed in windows in an electrically conductive layer defining the conductive segments. Embodiments of the method may be employed in manufacture of integrated circuit conductor.

Abstract: A method is provided for forming an electrical conductors, comprising forming electrically conductive segments incorporating electromigration-inhibiting plugs. A row of windows is formed in a planar surface and electromigration-inhibiting material is deposited over the planar surface and into the windows to provide, electromigration-inhibiting plugs in the windows. The plugs may be formed by depositing an electromigration-inhibiting liner in the windows and then depositing electrically conductive material to fill the windows. Portions of either or both of the plugs and conductive segments are removed such that the plugs and conductive segments have a coplanar surface. The plugs may be formed in windows in an electrically conductive layer defining the conductive segments.

Abstract: A method is provided for forming integrated circuit electrical conductors with electromigration-inhibiting/electrically conductive plugs disposed between electrically conductive segments of the electrical conductor. In accordance with such method, windows are formed within a planar surface. An electromigration-inhibiting/electrically conductive material is deposited over the planar surface and through the windows to fill the windows and thereby provide, in such windows, plugs of electromigration-inhibiting/electrically conductive material. Portions of the electromigration-inhibiting/electrically conductive material are removed to form the plugs with surfaces co-planar a surface surrounding the plugs. The electrical conductive segments are formed within the same planar surface as the plugs, either before, or after the plug formation. The electrical conductive segments have surfaces co-planar with the plugs, are aligned with and electrically interconnected through the plugs.

Abstract: A method is provided for forming an electrical conductors, comprising forming electrically conductive segments incorporating electromigration-inhibiting plugs. A row of windows is formed in a planar surface and electromigration-inhibiting material is deposited over the planar surface and into the windows to provide electromigration-inhibiting plugs in the windows. The plugs may be formed by depositing an electromigration-inhibiting liner in the windows and then depositing electrically conductive material to fill the windows. Portions of either or both of the plugs and conductive segments are removed such that the plugs and conductive segments have a coplanar surface. The plugs may be formed in windows in an electrically conductive layer defining the conductive segments.

Abstract: An integrated circuit is formed having electrical conductors with electromigration-inhibiting/electrically conductive plugs disposed between electrically conductive segments of the electrical conductor. Windows are formed within a planar surface. An electromigration-inhibiting/electrically conductive material is deposited over the planar surface and through the windows to fill the windows and thereby provide, in such windows, plugs of electromigration-inhibiting/electrically conductive material. Portions of the electromigration-inhibiting/electrically conductive material are removed to form the plugs with surfaces co-planar a surface surrounding the plugs. The electrical conductive segments are formed within the same planar surface as the plugs, either before, or after, the plug formation. The electrical conductive segments have surfaces co-planar with the plugs, are aligned with and electrically interconnected through the plugs.

Abstract: A method is provided for forming integrated circuit electrical conductors with electromigration-inhibiting/electrically conductive plugs disposed between electrically conductive segments of the electrical conductor. In accordance with such method, windows are formed within a planar surface. An electromigration-inhibiting/electrically conductive material is deposited over the planar surface and through the windows to fill the windows and thereby provide, in such windows, plugs of electromigration-inhibiting/electrically conductive material. Portions of the electromigration-inhibiting/electrically conductive material are removed to form the plugs with surfaces co-planar a surface surrounding the plugs. The electrical conductive segments are formed within the same planar surface as the plugs, either before, or after the plug formation. The electrical conductive segments have surfaces co-planar with the plugs, are aligned with and electrically interconnected through the plugs.