Patents by Inventor Lawrence Brigham

Lawrence Brigham has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of fabricating a MOS transistor with a raised source/drain extension
    Patent number: 6121100
    Abstract: A method of forming a MOS transistor. According to the method of the present invention, a pair of source/drain contact regions are formed on opposite sides of a gate electrode. After forming the pair of source/drain contact regions, semiconductor material is deposited onto opposite sides of the gate electrode. Dopants are then diffused from the semiconductor material into the substrate beneath the gate electrode to form a pair of source/drain extensions.
    Type: Grant
    Filed: December 31, 1997
    Date of Patent: September 19, 2000
    Assignee: Intel Corporation
    Inventors: Ebrahim Andideh, Lawrence Brigham, Robert S. Chau, Tahir Ghani, Chia-Hong Jan, Justin Sandford, Mitchell C. Taylor