Abstract: A monolithic tunable mid-infrared laser has a wavelength range within the range of 3-14 ?m and comprises a heterogeneous quantum cascade active region together with at least a first integrated grating. The heterogeneous quantum cascade active region comprises at least one stack, the stack comprising two, desirably at least three differing stages. Methods of operating and calibrating the laser are also disclosed.

Abstract: A monolithic tunable mid-infrared laser has a wavelength range within the range of 3-14 ?m and comprises a heterogeneous quantum cascade active region together with at least a first integrated grating. The heterogeneous quantum cascade active region comprises at least one stack, the stack comprising two, desirably at least three differing stages. Methods of operating and calibrating the laser are also disclosed.

Abstract: Metallization patterns are provided to reduce the probability of chip fracture in semiconductor lasers. According to one embodiment disclosed herein, the pad edges of a metallization pattern extend across a plurality of crystallographic planes in the laser substrate. In this manner, cracks initiated at any given stress concentration would need to propagate across many crystallographic planes in the substrate to reach a significant size. Additional embodiments of the present disclosure relate to the respective geometries and orientations of adjacent pairs of contact pads. Still further embodiments are disclosed and claimed.

Abstract: Particular embodiments of the present disclosure bring an SHG crystal, or other type of wavelength conversion device, into close proximity with a laser source to eliminate the need for coupling optics, reduce the number of package components, and reduce package volume. According to one embodiment of the present disclosure, an optical package is provided comprising a laser source subassembly comprising a laser base and a wavelength conversion device subassembly comprising a converter base. The bonding interface of the laser base is bonded the complementary bonding interface of the converter base such that the laser output face can be proximity-coupled to the converter input face at an predetermined interfacial spacing x. Additional embodiments are disclosed and claimed.

Abstract: Particular embodiments of the present disclosure bring an SHG crystal, or other type of wavelength conversion device, into close proximity with a laser source to eliminate the need for coupling optics, reduce the number of package components, and reduce package volume. According to one embodiment of the present disclosure, an optical package is provided comprising a laser source and a wavelength conversion device. The laser source is positioned such that the output face of the laser source is proximity-coupled to a waveguide portion of the input face of the wavelength conversion device. The input face of the wavelength conversion device comprises an ?-cut facet and ?-cut facet. The ?-cut facet of the input face is oriented at a horizontal angle ?, relative to the waveguide of the wavelength conversion device to permit proximity coupling of the output face of the laser source and the input face of the wavelength conversion device.

Abstract: Embodiments of the present disclosure bring a wavelength conversion device into close proximity with a laser source to eliminate the need for coupling optics, reduce the number of package components, and reduce package volume. According to one embodiment of the present disclosure, an optical package is provided comprising a laser diode chip and a clad metal substrate. The clad metal substrate comprises a clad metal region that is mechanically coupled to a base metal region. The laser diode chip is coupled to the clad metal region. The clad metal region comprises a clad metal material having a thermal conductivity that is greater than a thermal conductivity of the base metal material. The clad metal region further comprises a coefficient of thermal expansion that is approximately equal to a coefficient of thermal expansion of the base metal material and is greater than a coefficient of thermal expansion of the laser diode chip.

Abstract: Particular embodiments of the present disclosure bring an SHG crystal, or other type of wavelength conversion device, into close proximity with a laser source to eliminate the need for coupling optics, reduce the number of package components, and reduce package volume. According to one embodiment of the present disclosure, an optical package is provided comprising a laser source subassembly comprising a laser base and a wavelength conversion device subassembly comprising a converter base. The bonding interface of the laser base is bonded the complementary bonding interface of the converter base such that the laser output face can be proximity-coupled to the converter input face at an predetermined interfacial spacing x. Additional embodiments are disclosed and claimed.

Abstract: Particular embodiments of the present disclosure bring an SHG crystal, or other type of wavelength conversion device, into close proximity with a laser source to eliminate the need for coupling optics, reduce the number of package components, and reduce package volume. According to one embodiment of the present disclosure, an optical package is provided comprising a laser source and a wavelength conversion device. The laser source is positioned such that the output face of the laser source is proximity-coupled to a waveguide portion of the input face of the wavelength conversion device. The input face of the wavelength conversion device comprises an ?-cut facet and ?-cut facet. The ?-cut facet of the input face is oriented at a horizontal angle ?, relative to the waveguide of the wavelength conversion device to permit proximity coupling of the output face of the laser source and the input face of the wavelength conversion device.

Abstract: Metallization patterns are provided to reduce the probability of chip fracture in semiconductor lasers. According to one embodiment disclosed herein, the pad edges of a metallization pattern extend across a plurality of crystallographic planes in the laser substrate. In this manner, cracks initiated at any given stress concentration would need to propagate across many crystallographic planes in the substrate to reach a significant size. Additional embodiments of the present disclosure relate to the respective geometries and orientations of adjacent pairs of contact pads. Still further embodiments are disclosed and claimed.

Abstract: An optical package includes a semiconductor laser, a wavelength conversion device and a MEMS-actuated mirror oriented on a base module to form a folded optical pathway between an output of the semiconductor laser and an input of the wavelength conversion device. An optical assembly is located in a mechanical positioning device and the mechanical positioning device is disposed on the base module along the optical pathway such that the beam of the semiconductor laser passes through the optical assembly, is reflected by the MEMS-actuated mirror back through the optical assembly and into the waveguide portion of the wavelength conversion device. The MEMS-actuated mirror is operable to scan the beam of the semiconductor laser over the input of the wavelength conversion device. The optical assembly may be adjusted along the optical pathway with the mechanical positioning device to focus the beam into the waveguide portion of the wavelength conversion device.

Abstract: Glass-based micropositioning systems and methods are disclosed. The micropositioning systems and methods utilize microbumps (40) formed in a glass substrate (12 or 100). The microbumps are formed by subjecting a portion of the glass substrate to localized heating, which results in local rapid expansion of glass where the heat was applied. The height and shape of the microbumps depend on the type of glass substrate and the amount and form of heat delivered to the substrate. The microbumps allow for active or passive micropositioning of optical elements, including planar waveguides and optical fibers. Optical assemblies formed using microbump micropositioners are also disclosed.

Abstract: The present invention relates to lensed fiber stub assemblies and optical and optoelectronic packages including them. The fiber stub assemblies include a section of lensed fiber having a lensed end having a lens face, and a distal end having an endface, a lens alignment ferrule affixed to and holding the lensed end of the lensed fiber, and a package attachment ferrule having a distal endface and an exterior surface, the package attachment ferrule affixed to and holding the distal end of the lensed fiber. The lensed fiber stub assemblies of the present invention allow for hermetic packaging of optical and optoelectronic devices, good manufacturing throughput, facile package connectorization, acceptable device thermal performance, and ease of alignment in the packaging process.

Abstract: An optical fiber clamp that precisely aligns and clamps multiple optical fibers in multi-channel freespace optical systems, eliminates multiple parts and simplifies assembly. Multiple wafers each having an array of holes passing therethrough, are aligned with respect to each other. Optical fibers are passed through the holes, and at least one of the wafers is moved laterally with respect to the other wafers, so that sidewalls of the holes clamp the optical fibers into a desired location.