Abstract: A method and a device for matching an impedance of pulse radio frequency plasma, and a plasma processing device are provided. In the method, a matched frequency is searched for sequentially in high radio frequency power phases of an i-th pulse period and multiple pulse periods following the i-th pulse period, and a specific modulation frequency determined in a process of searching for the matched frequency in a previous pulse is assigned as an initial frequency for the subsequent pulse. In this way, it is equivalent to increasing a width of a first radio frequency power phase of a pulse period. Therefore, by sequentially performing frequency modulation in the first radio frequency power phases of the multiple pulses, a matched frequency of pulse radio frequency plasma of a high pulse frequency can be found, thereby achieving impedance matching of plasma of a high pulse frequency.

Abstract: A system for wafer processing, includes: a frame comprising a frame opening; and a membrane configured to couple to the frame and to cover at least a part of the frame opening, the membrane comprising a membrane opening, wherein the membrane opening has a membrane opening area that is equal to or less than a frame opening area of the frame opening; wherein the membrane is configured for coupling with the wafer, wherein when the wafer is coupled with the membrane, the wafer covers the membrane opening, and wherein the membrane is configured to maintain the wafer at a certain position with respect to the frame; and wherein the membrane opening area is less than a total area of the wafer.

Abstract: A system for wafer processing, includes: a frame comprising a frame opening; and a membrane configured to couple to the frame and to cover at least a part of the frame opening, the membrane comprising a membrane opening, wherein the membrane opening has a membrane opening area that is equal to or less than a frame opening area of the frame opening; wherein the membrane is configured for coupling with the wafer, wherein when the wafer is coupled with the membrane, the wafer covers the membrane opening, and wherein the membrane is configured to maintain the wafer at a certain position with respect to the frame; and wherein the membrane opening area is less than a total area of the wafer.

Abstract: A system for wafer processing, includes: a frame comprising a frame opening; and a membrane configured to couple to the frame and to cover at least a part of the frame opening, the membrane comprising a membrane opening, wherein the membrane opening has a membrane opening area that is equal to or less than a frame opening area of the frame opening; wherein the membrane is configured for coupling with the wafer, wherein when the wafer is coupled with the membrane, the wafer covers the membrane opening, and wherein the membrane is configured to maintain the wafer at a certain position with respect to the frame; and wherein the membrane opening area is less than a total area of the wafer.

Abstract: A system for wafer processing, includes: a frame comprising a frame opening; and a membrane configured to couple to the frame and to cover at least a part of the frame opening, the membrane comprising a membrane opening, wherein the membrane opening has a membrane opening area that is equal to or less than a frame opening area of the frame opening; wherein the membrane is configured for coupling with the wafer, wherein when the wafer is coupled with the membrane, the wafer covers the membrane opening, and wherein the membrane is configured to maintain the wafer at a certain position with respect to the frame; and wherein the membrane opening area is less than a total area of the wafer.

Abstract: A conveying device for conveying at least a first row of substrates and a second row of substrates, includes: a conveying fork having a main body and a plurality of branches, a first end of each of the branches is connected to the main body, and a second end of each of the branches is a free end; wherein a first branch of the plurality branches has a first plurality of grooves, and a second branch of the plurality of branches has a second plurality of grooves; and wherein one of the first plurality of grooves and one of the second plurality of grooves are configured to support one of the substrates in the first row.

Abstract: A device for manipulating at least a first row of wafers and a second row of wafers, includes: a first holder configured to hold the first row of wafers, the first holder having a first rod and a second rod, the first rod and the second rod of the first holder defining a space therebetween for accommodating the first row of wafers, wherein a distance between the first rod and the second rod of the first holder is variable; and a second holder configured to hold the second row of wafers, the second holder having a first rod and a second rod, the first rod and the second rod of the second holder defining a space therebetween for accommodating the second row of wafers, wherein a distance between the first rod and the second rod of the second holder is variable.

Abstract: A method and a device for matching an impedance of pulse radio frequency plasma, and a plasma processing device are provided. In the method, a matched frequency is searched for sequentially in high radio frequency power phases of an i-th pulse period and multiple pulse periods following the i-th pulse period, and a specific modulation frequency determined in a process of searching for the matched frequency in a previous pulse is assigned as an initial frequency for the subsequent pulse. In this way, it is equivalent to increasing a width of a first radio frequency power phase of a pulse period. Therefore, by sequentially performing frequency modulation in the first radio frequency power phases of the multiple pulses, a matched frequency of pulse radio frequency plasma of a high pulse frequency can be found, thereby achieving impedance matching of plasma of a high pulse frequency.

Abstract: A device for manipulating at least a first row of wafers and a second row of wafers, includes: a first holder configured to hold the first row of wafers, the first holder having a first rod and a second rod, the first rod and the second rod of the first holder defining a space therebetween for accommodating the first row of wafers, wherein a distance between the first rod and the second rod of the first holder is variable; and a second holder configured to hold the second row of wafers, the second holder having a first rod and a second rod, the first rod and the second rod of the second holder defining a space therebetween for accommodating the second row of wafers, wherein a distance between the first rod and the second rod of the second holder is variable.

Abstract: A conveying device for conveying at least a first row of substrates and a second row of substrates, includes: a conveying fork having a main body and a plurality of branches, a first end of each of the branches is connected to the main body, and a second end of each of the branches is a free end; wherein a first branch of the plurality branches has a first plurality of grooves, and a second branch of the plurality of branches has a second plurality of grooves; and wherein one of the first plurality of grooves and one of the second plurality of grooves are configured to support one of the substrates in the first row.

Abstract: A method and apparatus for atomic layer deposition (ALD) is described. In one embodiment, an apparatus comprises a vacuum chamber body having a contiguous internal volume comprised of a first deposition region spaced-apart from a second deposition region, the chamber body having a feature operable to minimize intermixing of gases between the first and the second deposition regions, a first gas port formed in the chamber body and positioned to pulse gas preferentially to the first deposition region to enable a first deposition process to be performed in the first deposition region, and a second gas port formed in the chamber body and positioned to pulse gas preferentially to the second deposition region to enable a second deposition process to be performed in the second deposition region is provided.

Abstract: In accordance with some embodiments described herein, a method for transferring a substrate is provided. The method includes loading one or more substrates into a respective mobile chamber of one or more mobile chambers. The mobile chambers are movable on a first rail positioned adjacent to two or more process modules. Each mobile chamber is configured to maintain a specified gas condition. The respective mobile chamber is moved along the first rail. The respective mobile chamber is docked to a respective process module of the two or more process modules. At least one of the one or more substrates is conveyed from the respective mobile chamber to the respective process module.

Abstract: In accordance with some embodiments described herein, a method for transferring a substrate to two or more process modules is provided, comprising loading at least one substrate into one or more mobile transverse chambers, the mobile transverse chambers being carried on a rail positioned adjacent to the two or more process modules, and wherein each mobile transverse chamber is configured to maintain a specified gas condition during conveyance of the substrate. One or more drive systems are actuated to propel at least one of the one or more mobile transverse chambers along the rail. The at least one mobile transfer chamber docks to at least one of the process modules, and the substrate is conveyed from the mobile transverse chamber to the at least one process modules.

Abstract: A method of transferring one or more substrates between process modules or load lock stations while minimizing heat loss is provided. In some embodiments the method comprising the steps of: identifying a destination location D1 for a substrate S1 present at an initial processing location P1; if the destination location D1 is occupied with a substrate S2, maintaining the substrate S1 at the initial processing location P1; and if the destination location D1 is available, transferring the substrate S1 to the destination location D1. In accordance with additional embodiments, the method is carried out on a system for processing substrates which includes two or more process modules, a substrate handling robot, a load lock chamber, and a transverse substrate handler. The transverse substrate handler includes mobile transverse chambers configured to convey substrates to process modules, wherein each mobile transverse chamber is configured to maintain a specified gas condition during the conveyance of the substrates.

Abstract: A method and apparatus for atomic layer deposition (ALD) is described. In one embodiment, an apparatus comprises a vacuum chamber body having a contiguous internal volume comprised of a first deposition region spaced-apart from a second deposition region, the chamber body having a feature operable to minimize intermixing of gases between the first and the second deposition regions, a first gas port formed in the chamber body and positioned to pulse gas preferentially to the first deposition region to enable a first deposition process to be performed in the first deposition region, and a second gas port formed in the chamber body and positioned to pulse gas preferentially to the second deposition region to enable a second deposition process to be performed in the second deposition region is provided.

Abstract: A method and apparatus for atomic layer deposition (ALD) is described. The apparatus comprises a deposition chamber and a wafer support. The deposition chamber is divided into two or more deposition regions that are integrally connected one to another. The wafer support is movable between the two or more interconnected deposition regions within the deposition chamber.

Abstract: In accordance with some embodiments described herein, a method for transferring a substrate is provided. The method includes loading one or more substrates into a respective mobile chamber of one or more mobile chambers. The mobile chambers are movable on a first rail positioned adjacent to two or more process modules. Each mobile chamber is configured to maintain a specified gas condition. The respective mobile chamber is moved along the first rail. The respective mobile chamber is docked to a respective process module of the two or more process modules. At least one of the one or more substrates is conveyed from the respective mobile chamber to the respective process module.

Abstract: In accordance with some embodiments described herein, a method for transferring a substrate to two or more process modules is provided, comprising loading at least one substrate into one or more mobile transverse chambers, the mobile transverse chambers being carried on a rail positioned adjacent to the two or more process modules, and wherein each mobile transverse chamber is configured to maintain a specified gas condition during conveyance of the substrate. One or more drive systems are actuated to propel at least one of the one or more mobile transverse chambers along the rail. The at least one mobile transfer chamber docks to at least one of the process modules, and the substrate is conveyed from the mobile transverse chamber to the at least one process modules.

Abstract: A method and apparatus for atomic layer deposition (ALD) is described. The apparatus comprises a deposition chamber and a wafer support. The deposition chamber is divided into two or more deposition regions that are integrally connected one to another. The wafer support is movable between the two or more interconnected deposition regions within the deposition chamber.

Abstract: In accordance with some embodiments described herein, a method for transferring a substrate to two or more process modules is provided, comprising loading at least one substrate into one or more mobile transverse chambers, the mobile transverse chambers being carried on a rail positioned adjacent to the two or more process modules, and wherein each mobile transverse chamber is configured to maintain a specified gas condition during conveyance of the substrate. One or more drive systems are actuated to propel at least one of the one or more mobile transverse chambers along the rail. The at least one mobile transfer chamber docks to at least one of the process modules, and the substrate is conveyed from the mobile transverse chamber to the at least one process modules.