Abstract: A plasma reaction chamber particularly configured for chemical vapor deposition of titanium nitride with a TDMAT precursor, the deposition including a plasma step. Gas is injected from a gas cavity in a showerhead electrode assembly through a large number of showerhead holes into the processing region over the wafer. The showerhead electrode is capable of being RF energized to create a plasma of a gas in the processing region. The showerhead electrode and other parts of the assembly are cooled by a cooling plate disposed above the gas cavity and connected to a rim of the showerhead electrode. A convolute water-cooling channel is formed in the cooling plate having a small cross section and numerous bends so as to create turbulent flow, thus aiding thermal transfer. The water cooling plate is connected to the showerhead electrode across a large horizontal interface, thus also aiding thermal flow.

Abstract: A plasma reaction chamber particularly suited for plasma-enhance chemical vapor deposition of titanium using TiCl.sub.4 as the precursor. The reactor includes a perforated showerhead faceplate and a perforated blocker plate within the showerhead to evenly distribute the atomized TiCl.sub.4. Both the showerhead faceplate and the blocker plate are made of solid nickel. RF power is applied between the showerhead faceplate and the heater pedestal supporting the wafer to excite the processing gas into a plasma. A shield ring is set on the periphery of the heater pedestal to confine the plasma to the processing region above the wafer. The shield ring is supported on the heater pedestal by a downwardly descending ridge, thereby minimizing thermal flow. The shield ring also protects the periphery of the top surface of the heater pedestal not covered by the wafer. An isolator electrically insulates the RF-driven showerhead from the chamber body and is disposed generally above the shield ring.