Patents by Inventor Lawrence Dass

Lawrence Dass has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for fabricating a moat around an active pixel area of a microelectronic image projection device
    Patent number: 6914658
    Abstract: A method for fabricating a microelectronic image projection device. One or more nitride dams are formed upon the substrate of the device surrounding the active pixel area. The nitride dams help to contain the liquid crystal and confine the epoxy sealant. In alternative embodiments one or more nitride pillars are formed on the substrate to support the cover glass and maintain the distance between the cover glass and the active pixel area of the substrate. The nitride dams and pillars may be formed on the substrate through an ion implantation method in which HDP nitride is implanted with, for example, silicon ions. The ion implantation causes those areas of the nitride that are implanted with ions to etch more slowly than those areas that are not implanted with ions. This etch rate differential allows formation of the nitride formations with a non-contact single mask etching process.
    Type: Grant
    Filed: December 26, 2002
    Date of Patent: July 5, 2005
    Assignee: Intel Corporation
    Inventors: Krishna Seshan, Chaoyang Li, Geoffery L. Bakker, Lawrence Dass
  • Method for fabricating microelectronic image projection devices
    Publication number: 20040125247
    Abstract: A method for fabricating a microelectronic image projection device. One or more nitride dams are formed upon the substrate of the device surrounding the active pixel area. The nitride dams help to contain the liquid crystal and confine the epoxy sealant. In alternative embodiments one or more nitride pillars are formed on the substrate to support the cover glass and maintain the distance between the cover glass and the active pixel area of the substrate. The nitride dams and pillars may be formed on the substrate through an ion implantation method in which HDP nitride is implanted with, for example, silicon ions. The ion implantation causes those areas of the nitride that are implanted with ions to etch more slowly than those areas that are not implanted with ions. This etch rate differential allows formation of the nitride formations with a non-contact single mask etching process.
    Type: Application
    Filed: December 26, 2002
    Publication date: July 1, 2004
    Inventors: Krishna Seshan, Chaoyang Li, Geoffrey L. Bakker, Lawrence Dass