Abstract: The present invention provides an apparatus and method for distributing gas to multiple feeds into a chamber 125 to process a substrate 115. In one embodiment, the system 155 includes a process gas injector 190 for introducing process gas into the chamber 125 and a shield assembly 200 having a number of shield bodies 210, 215, adjacent to the process gas injector to reduce deposition of process byproducts thereon. Each shield body 210, 215, has a screen 230 and a metering tube 240 with an array of holes 245 therein to deliver shield gas through the screen. Shield gas is supplied to the metering tubes 240 through a number of flowpaths 255, each having a flow limiter 265 with an orifice 270 sized so that equal flows of shield gas are provided from each of the shield bodies 210, 215. Preferably, the orifices 270 are also sized so that the flow of shield gas through each metering tube 240 is constant, even if the shield gas is supplied from a supply that varies in pressure or flow.

Abstract: A protective shield and a semiconductor processing system including a protective shield is provided. The shield includes a frame assembly including a pair of spaced end walls and a pair of side walls extending between and mounted to the end walls, and a plurality of shield bodies carried by the frame assembly. Each of the shield bodies includes a base having a continuous unit frame, a perforated sheet carried by said continuous frame, a plenum between the base and the perforated sheet, and a gas delivery device for delivering an inert gas to the plenum at a flow rate such that the gas diffuses through the perforated sheet.

Abstract: The present invention provides an apparatus and method for distributing gas to multiple feeds into a chamber 125 to process a substrate 115. In one embodiment, the system 155 includes a process gas injector 190 for introducing process gas into the chamber 125 and a shield assembly 200 having a number of shield bodies 210, 215, adjacent to the process gas injector to reduce deposition of process byproducts thereon. Each shield body 210, 215, has a screen 230 and a metering tube 240 with an array of holes 245 therein to deliver shield gas through the screen. Shield gas is supplied to the metering tubes 240 through a number of flowpaths 255, each having a flow limiter 265 with an orifice 270 sized so that equal flows of shield gas are provided from each of the shield bodies 210, 215. Preferably, the orifices 270 are also sized so that the flow of shield gas through each metering tube 240 is constant, even if the shield gas is supplied from a supply that varies in pressure or flow.

Abstract: A protective shield and a semiconductor processing system including a protective shield is provided. The shield includes a frame assembly including a pair of spaced end walls and a pair of side walls extending between and mounted to the end walls, and a plurality of shield bodies carried by the frame assembly. Each of the shield bodies includes a base having a continuous unit frame, a perforated sheet carried by said continuous frame, a plenum between the base and the perforated sheet, and a gas delivery device for delivering an inert gas to the plenum at a flow rate such that the gas diffuses through the perforated sheet. The chemical vapor deposition system includes a plurality of processing chambers, a conveyor for transporting substrates through the processing chambers, buffer modules isolating the processing chambers from the rest of the process path all enclosed within a muffle.

Abstract: A protective shield and an atmospheric pressure chemical vapor deposition system including a protective shield. The shield includes a frame assembly including a pair of spaced end walls and a pair of side walls extending between and mounted to the end walls, and a plurality of shield bodies carried by the frame assembly. Each of the shield bodies includes a base, a perforated sheet carried by the base, a plenum between the base and the perforated sheet, and a gas delivery device for delivering an inert gas to the plenum at a flow rate such that the gas diffuses through the perforated sheet. The chemical vapor deposition system includes a plurality of processing chambers, a conveyor for transporting substrates through the processing chambers, buffer chambers isolating the processing chambers from the rest of the process path all enclosed within a muffle.