Abstract: A pulse signal generator apparatus for producing an ultrafast, high-voltage pulser using a circumferentially illuminated, laser-switched radial transmission line transformer. The apparatus includes a radial transmission line transformer having a circular plate structure which can be coupled to a voltage source that becomes conductive upon the application thereto of a predetermined type of light energy. A laser switching device which is integral with the radial transmission line transformer and surrounds the circular plate structure, operates to switch an input electrical pulse of a predetermined peak voltage, injected at a circumferential edge of the circular plate structure onto a peripheral surface of the circular plate structure, to produce an output electrical pulse having a substantially higher peak voltage than the predetermined peak voltage of the input electrical pulse, at a center of the circular plate structure of the transmission line transformer.

Abstract: A monolithic photoconductive pulsar utilizing a radial transmission line structure to store energy and a unique optical pulse illumination means to trigger the radial transmission line to radiate extremely, high voltage gain, narrow bipolar pulses. By achieving a higher voltage gain, the bipolar RF pulses are desirable in that they substantially improve the efficiency and lifetime of the device over the prior art.

Abstract: An electronically controlled frequency agile impulse source utilizing pulse sharpening techniques to increase its versatility in radiating impulse energy at a variety of center frequencies and bandwidths in the megahertz to the gigahertz range. Such pulse sharpening provides for a radiator having a wider range of applications.

Abstract: The present invention describes a method of explosively vaporizing a piece f semiconductor material in a plasma formed by a fast, high voltage current pulse. The semiconductor material may be formed from crystalline, polycrystalline, or amorphous forms of semiconductor material. After the semiconductor material is vaporized, it coalesces as the plasma begins to cool and is deposited in a collection system. The size and composition of the microparticles formed by this process can be controlled by conditioning the plasma in predetermined manners. In particular, impurities can be introduced either in the target material, in gas introduced in the plasma, or in the gas through which the coalescing microparticles travel prior to deposition.