Abstract: A power switching module includes a substrate having at least one silicon die forming at least one power switching element and having leadframe terminal posts extending away therefrom. A planar negative rail layer providing a negative power supply and including a non-inductive current shunt resistor formed therein and a planar positive rail layer providing a positive power supply are positioned at the substrate so that the negative rail layer and the positive rail layer are coplanar with respect to each other. A phase output layer providing a phase output signal is also positioned at the substrate. Each of the layers are electrically isolated from each of the other layers and are electrically connected to the substrate.

Abstract: A substrate assembly for use with a high power switching module includes at least one power block having a base plate for providing mechanical rigidity for the power block. The power block also includes at least one silicon die mounted onto the base plate and configured to form at least one high power switching transistor having leads extending away therefrom. The power blocks are then supportably mounted into corresponding apertures in a rigid frame which mounts the power switching module onto a heat dissipating surface and tested independently before mounting into the frame at full load current and power, which cannot be performed at the bare die level.

Abstract: An isolated gate driver device for a power switching device having a plurality of transistors includes a primary circuit having a voltage source of a first voltage potential. The primary circuit constantly switches the voltage source to generate first and second load signals based on control signals received from a microcontroller. The first load signal is modulated at a first frequency for enabling the transistors, and the second load signal is modulated at a second frequency, different from the first frequency, for disabling the transistors. A plurality of high frequency transformers corresponding to each of the transistors is coupled to the primary circuit. The transformers have a primary side for receiving one of the first and second load signals and a secondary side for transforming the one of the first and second load signals into corresponding signals at a second voltage potential.