Abstract: Techniques of augmented reality device calibration are disclosed. In some example embodiments, a system calibrates a visual inertial navigation (VIN) camera of a head mounted display (HMD) device with at least one eye camera of the HMD device to generate multi-camera calibration parameters, calibrating the at eye camera(s) with a display module of the HMD to generate display calibration parameters, calibrating the IMU with the VIN camera to generate VIN calibration parameters, and calibrating the IMU to the display module using the multi-camera calibration parameters, the display calibration parameters, and the VIN calibration parameters.

Abstract: Techniques of augmented reality device calibration are disclosed. In some example embodiments, a system calibrates a visual inertial navigation (VIN) camera of a head mounted display (HMD) device with at least one eye camera of the HMD device to generate multi-camera calibration parameters, calibrating the at eye camera(s) with a display module of the HMD to generate display calibration parameters, calibrating the IMU with the VIN camera to generate VIN calibration parameters, and calibrating the IMU to the display module using the multi-camera calibration parameters, the display calibration parameters, and the VIN calibration parameters.

Abstract: High speed optical modulators can be made of k modulators connected in series disposed on one of a variety of semiconductor substrates. An electrical signal propagating in a microwave transmission line is tapped off of the transmission line at regular intervals and is amplified by k distributed amplifiers. Each of the outputs of the k distributed amplifiers is connected to a respective one of the k modulators. Distributed amplifier modulators can have much higher modulating speeds than a comparable lumped element modulator, due to the lower capacitance of each of the k modulators. Distributed amplifier modulators can have much higher modulating speeds than a comparable traveling wave modulator, due to the impedance matching provided by the distributed amplifiers.

Abstract: The index of refraction of waveguide structures can be varied by altering carrier concentration. The waveguides preferably comprise semiconductors like silicon that are substantially optically transmissive at certain wavelengths. Variation of the carrier density in these semiconductors may be effectuated by inducing an electric field within the semiconductor for example by apply a voltage to electrodes associated with the semiconductor. Variable control of the index of refraction may be used to implement a variety of functionalites including, but not limited to, tunable waveguide gratings and resonant cavities, switchable couplers, modulators, and optical switches.

Abstract: An apparatus and method for splitting a received optical signal into its orthogonal polarizations and sending the two polarizations on separate dual integrated waveguides to other systems on chip for further signal processing. The present invention provides an apparatus and method for facilitating the processing of optical signals in planar waveguides received from optical fibers.

Abstract: A polarization splitting grating coupler (PSGC) connects an optical signal from an optical element, such as a fiber, to an optoelectronic integrated circuit. The PSGC separates a received optical signal into two orthogonal polarizations and directs the two polarizations to separate waveguides on an integrated circuit. Each of the two separated polarizations can then be processed, as needed for a particular application, by the integrated circuit. A PSGC can also operate in the reverse direction, and couple two optical signals from an integrated circuit to two respective orthogonal polarizations of one optical output signal sent off chip to an optical fiber.

Abstract: Various embodiments include optically aligning and connecting optical devices to optical grating couplers using a variety of bonding techniques, as a means of transferring optical signals to and from optoelectronic integrated circuits.

Abstract: Various embodiment comprise silicon-on-insulator waveguide designs that simultaneously achieve both high optical confinement, low-loss, and provide for electrical connections. In certain embodiments, high index contrast waveguides comprise a central elongate waveguide portion and a segmented portion comprising a single thin layer of Silicon-On-Insulator that achieves both high optical confinement and minimal insertion loss. Other devices, such as chemical and biological sensors, and optical elements may also be fabricated.

Abstract: A method for integrating first and second type devices on a semiconductor substrate includes forming openings within an active semiconductor layer of a dual semiconductor-on-insulator in first and second regions of the semiconductor substrate. First and second non-MOS transistor device implant regions are formed within portions of an intermediate semiconductor layer underlying first and second openings, respectively, in a first device portion, filled with a fill material and planarized. A top surface portion of the active semiconductor layer disposed in-between the first and second openings is exposed, first and second low dose non-MOS transistor device well regions are formed in respective first and second portions of the intermediate semiconductor layer underlying a region in-between the first and second openings.

Abstract: A method of integrating a non-MOS transistor device and a CMOS electronic device on a semiconductor substrate includes forming openings within an active semiconductor layer in first and second regions of a semiconductor substrate. The first region corresponds to a non-MOS transistor device portion and the second region corresponds to a CMOS electronic device portion. The openings are formed using a dual trench process, forming openings or shallow trenches in the non-MOS transistor device portion to a first depth, and openings in the CMOS electronic device portion to a second depth greater than the first depth.

Abstract: A semiconductor structure has a waveguide a transistor on the same integrated circuit. One trench isolation technique is used for defining a transistor region and another is used for optimizing a lateral boundary of the waveguide. Both the waveguide and the transistor have trenches with liners that can be separately optimized. The transistor has a salicide for source/drain contacts. During this process, a salicide block is used over the waveguide to prevent salicide formation in unwanted areas of the waveguide. The depth of the trench for the waveguide can be lower than that of the trench for the transistor isolation. Trench isolation depth can be set by an etch stop region that can be either a thin oxide layer or a buffer layer that is selectively etchable with respect to the top semiconductor layer and that can be used as a seed layer for growing the top semiconductor layer.

Abstract: A semiconductor device is formed as part of an integrated circuit. The semiconductor device, which is formed in an active semiconductor layer, is surrounded by a guardian that provides a diffusion barrier against contaminants and also provides assistance in avoiding dishing above the semiconductor device during chemical mechanical polishing. The dielectric that is above the semiconductor device and inside the guardian is etched to form an opening that receives one of an optical fiber, an electromagnetic signal source, or an electromagnetic signal load. The remaining dielectric is in layers that are of substantially uniform thickness. The guardian is built up in layers that are part of a normal integrated circuit process. These include contact layers, via layers, and interconnect layers.

Abstract: A polarization splitting grating coupler (PSGC) connects an optical signal from an optical element, such as a fiber, to an optoelectronic integrated circuit. The PSGC separates a received optical signal into two orthogonal polarizations and directs the two polarizations to separate waveguides on an integrated circuit. Each of the two separated polarizations can then be processed, as needed for a particular application, by the integrated circuit. A PSGC can also operate in the reverse direction, and couple two optical signals from an integrated circuit to two respective orthogonal polarizations of one optical output signal sent off chip to an optical fiber.

Abstract: High speed optical modulators can be made of a reverse biased lateral PN diode formed in a silicon rib optical waveguide disposed on a SOI or other silicon based substrate. A PN junction is formed at the boundary of the P and N doped regions. The depletion region at the PN junction overlaps with the center of a guided optical mode propagating through the waveguide. Electrically modulating a reverse biased lateral PN diode causes a phase shift in an optical wave propagating through the waveguide. Prior art forward biased PN and PIN diode modulators have been relatively low speed devices.

Abstract: A strip loaded waveguide comprises a slab and a strip, wherein the strip is separated from the slab. Nevertheless, a guiding region is provided for propagating an optical mode and this guiding region extends both within the strip and the slab. A layer of material having an index of refraction lower than that of the strip and the slab may be disposed between and separate the strip and the slab. In one embodiment, the slab comprises a crystalline silicon, the strip comprises polysilicon or crystalline silicon, and the layer of material therebetween comprises silicon dioxide. Such waveguides may be formed on the same substrate with transistors. These waveguides may also be electrically biased to alter the index of refraction and/or absorption of the waveguide.

Abstract: The index of refraction of waveguide structures can be varied by altering carrier concentration. The waveguides preferably comprise semiconductors like silicon that are substantially optically transmissive at certain wavelengths. Variation of the carrier density in these semiconductors may be effectuated by inducing an electric field within the semiconductor for example by apply a voltage to electrodes associated with the semiconductor. Variable control of the index of refraction may be used to implement a variety of functionalites including, but not limited to, tunable waveguide gratings and resonant cavities, switchable couplers, modulators, and optical switches.

Abstract: A strip loaded waveguide comprises a slab and a strip, wherein the strip is separated from the slab. Nevertheless, a guiding region is provided for propagating an optical mode and this guiding region extends both within the strip and the slab. A layer of material having an index of refraction lower than that of the strip and the slab may be disposed between and separate the strip and the slab. In one embodiment, the slab comprises a crystalline silicon, the strip comprises polysilicon or crystalline silicon, and the layer of material therebetween comprises silicon dioxide. Such waveguides may be formed on the same substrate with transistors. These waveguides may also be electrically biased to alter the index of refraction and/or absorption of the waveguide.

Abstract: The index of refraction of waveguide structures can be varied by altering carrier concentration. The waveguides preferably comprise semiconductors like silicon that are substantially optically transmissive at certain wavelengths. Variation of the carrier density in these semiconductors may be effectuated by inducing an electric field within the semiconductor for example by apply a voltage to electrodes associated with the semiconductor. Variable control of the index of refraction may be used to implement a variety of functionalites including, but not limited to, tunable waveguide gratings and resonant cavities, switchable couplers, modulators, and optical switches.

Abstract: A strip loaded waveguide comprises a slab and a strip, wherein the strip is separated from the slab. Nevertheless, a guiding region is provided for propagating an optical mode and this guiding region extends both within the strip and the slab. A layer of material having an index of refraction lower than that of the strip and the slab may be disposed between and separate the strip and the slab. In one embodiment, the slab comprises a crystalline silicon, the strip comprises polysilicon or crystalline silicon, and the layer of material therebetween comprises silicon dioxide. Such waveguides may be formed on the same substrate with transistors. These waveguides may also be electrically biased to alter the index of refraction and/or absorption of the waveguide.

Abstract: High speed optical modulators can be made of k modulators connected in series disposed on one of a variety of semiconductor substrates. An electrical signal propagating in a microwave transmission line is tapped off of the transmission line at regular intervals and is amplified by k distributed amplifiers. Each of the outputs of the k distributed amplifiers is connected to a respective one of the k modulators. Distributed amplifier modulators can have much higher modulating speeds than a comparable lumped element modulator, due to the lower capacitance of each of the k modulators. Distributed amplifier modulators can have much higher modulating speeds than a comparable traveling wave modulator, due to the impedance matching provided by the distributed amplifiers.