Abstract: An integrated circuit device includes a semiconductor chip, a circuit board and a layer of bonding material. The semiconductor chip has a metal plated surface on a first side and has a predetermined thickness. A first conductive layer formed of electrically conductive material is bonded to a first side of a first dielectric layer and defines a plurality of conducting elements. A second conductive layer defining a first electrical ground plane and formed of electrically conductive material is bonded to a second side of the first dielectric layer opposite the first conductive layer. The circuit board has a pocket formed therein, passing through the first conductive layer and through the first dielectric layer. The pocket is closed on the second side by the second conductive layer. A portion of the second conductive layer is exposed at a bottom of the pocket. The pocket is of substantially the same size and shape as the semiconductor chip.

Abstract: An integrated circuit device includes a semiconductor chip, a circuit board and a layer of bonding material. The semiconductor chip has a metal plated surface on a first side and has a predetermined thickness. A first conductive layer formed of electrically conductive material is bonded to a first side of a first dielectric layer and defines a plurality of conducting elements. A second conductive layer defining a first electrical ground plane and formed of electrically conductive material is bonded to a second side of the first dielectric layer opposite the first conductive layer. The circuit board has a pocket formed therein, passing through the first conductive layer and through the first dielectric layer. The pocket is closed on the second side by the second conductive layer. A portion of the second conductive layer is exposed at a bottom of the pocket. The pocket is of substantially the same size and shape as the semiconductor chip.

Abstract: A broadband antenna includes a center fed active radiating/receiving element formed of two contiguous conductive spirals. The two planar antenna spirals are secured to a cavity loaded with a wave absorbing lossy material such that the antenna is operative only in its front lobe direction opposite the loaded cavity.In accordance with the present invention, the cavity wall is formed of varying pattern of conductive and insulative material. The resultant composite antenna is characterized by a relatively narrow beam pattern for both horizontally and vertically polarized electric waves across a broad spectrum of frequencies.

Abstract: A ferrite sleeve placed about the cavity portion of an antenna reduces back lobe radiation without degrading the antenna's front hemisphere radiation pattern. The thickness of the ferrite sleeve is selected such that the sleeve highly attenuates the surface currents on the cavity at the lower end of the operating frequency range of the antenna.

Abstract: A tunable coupled transmission line band reject filter for use in the microwave frequency range includes a coupled transmission line having first and second line sections. Each line section has an input end and an output end. A transmission line exhibits a natural notch at a particular frequency. A first varactor is coupled between the input ends of the first and second sections. A second varactor is coupled between the output ends of the first and second sections. A D.C. bias voltage across the varactor diodes controls the center frequency of the resulting notch filter.

Abstract: An active element behaving as a negative resistor is situated in parallel with a varactor to cancel the varactor losses. DC bias is provided for the active element and for the varactor which are separated by a DC block. The entire circuit can be fabricated on a single, relatively small chip. A Gunn diode may be used as the active element if the circuit is formed on a silicon substrate. A field effect transistor may be used as the active element on a gallium arsenide substrate.

Abstract: For use with a voltage controlled attenuator operating at microwave frequencies, the driver generates an output signal which is a non-linear function of an input voltage signal. The input stage includes a thermistor to alter the input signal to compensate for temperature variations. The temperature compensated signal is delinearized by parallelly connected diodes which separately selectively ground the output of the input stage at different potential levels defined by resistor networks. A differential amplifier generates a signal which is a function of the difference between the compensated input signal and the delinearized signal. The output stage generates an output voltage which is a function of the difference signal. The output voltage regulates a current source. The output of the current source is applied to the attenuating PIN diodes.

Abstract: Spaced conductive strips are formed on a substrate. A first transmission line transformer is connected between the input and one end of the first strip. A second transmission line transformer is connected between the other end of the first strip and the output. The second strip is connected to ground. A shunt tuning circuit is connected between the strips. The circuit includes first and second MOS capacitors mounted on and connected to the grounded strip. An RF choke interconnects the other side of each capacitor. A varactor diode is mounted on and connected to the first capacitor. An etched spiral inductor connects the varactor and the first strip. A bias signal is applied to the junction between the choke and the second capacitor in order to tune the filter.