Abstract: Growing spin-capable multi-walled carbon nanotube (MWCNT) forests in a repeatable fashion will become possible through understanding the critical factors affecting the forest growth. Here we show that the spinning capability depends on the alignment of adjacent MWCNTs in the forest which in turn results from the synergistic combination of a high areal density of MWCNTs and short distance between the MWCNTs. This can be realized by starting with both the proper Fe nanoparticle size and density which strongly depend on the sheet resistance of the catalyst film. Simple measurement of the sheet resistance can allow one to reliably predict the growth of spin-capable forests. The properties of pulled MWCNTs sheets reflect that there is a relationship between their electrical resistance and optical transmittance. Overlaying either 3, 5, or 10 sheets pulled out from a single forest produces much more repeatable characteristics.

Abstract: Growing spin-capable multi-walled carbon nanotube (MWCNT) forests in a repeatable fashion will become possible through understanding the critical factors affecting the forest growth. Here we show that the spinning capability depends on the alignment of adjacent MWCNTs in the forest which in turn results from the synergistic combination of a high areal density of MWCNTs and short distance between the MWCNTs. This can be realized by starting with both the proper Fe nanoparticle size and density which strongly depend on the sheet resistance of the catalyst film. Simple measurement of the sheet resistance can allow one to reliably predict the growth of spin-capable forests. The properties of pulled MWCNTs sheets reflect that there is a relationship between their electrical resistance and optical transmittance. Overlaying either 3, 5, or 10 sheets pulled out from a single forest produces much more repeatable characteristics.

Abstract: Growing spin-capable multi-walled carbon nanotube (MWCNT) forests in a repeatable fashion will become possible through understanding the critical factors affecting the forest growth. Here we show that the spinning capability depends on the alignment of adjacent MWCNTs in the forest which in turn results from the synergistic combination of a high areal density of MWCNTs and short distance between the MWCNTs. This can be realized by starting with both the proper Fe nanoparticle size and density which strongly depend on the sheet resistance of the catalyst film. Simple measurement of the sheet resistance can allow one to reliably predict the growth of spin-capable forests. The properties of pulled MWCNTs sheets reflect that there is a relationship between their electrical resistance and optical transmittance. Overlaying either 3, 5, or 10 sheets pulled out from a single forest produces much more repeatable characteristics.

Abstract: Growing spin-capable multi-walled carbon nanotube (MWCNT) forests in a repeatable fashion will become possible through understanding the critical factors affecting the forest growth. Here we show that the spinning capability depends on the alignment of adjacent MWCNTs in the forest which in turn results from the synergistic combination of a high areal density of MWCNTs and short distance between the MWCNTs. This can be realized by starting with both the proper Fe nanoparticle size and density which strongly depend on the sheet resistance of the catalyst film. Simple measurement of the sheet resistance can allow one to reliably predict the growth of spin-capable forests. The properties of pulled MWCNTs sheets reflect that there is a relationship between their electrical resistance and optical transmittance. Overlaying either 3, 5, or 10 sheets pulled out from a single forest produces much more repeatable characteristics.

Abstract: The present invention includes compositions, devices and methods for filling structures of high aspect ratio elements for growth amplification and device fabrication. A method includes a method of filling a structure comprising the steps of providing one or more structures, each structure having a plurality of high aspect ratio elements, wherein the aspect ratio is at least 5; and coating the plurality of high aspect ratio elements with at least one solidifying material produced by a form of chemical vapor deposition thereby forming a structured-film. Compositions of the present invention are solid formed structures that are less fragile, do not require such delicate handling to avoid serious degradation, are more stable, last longer, do not deform, and exhibit little stress as well as improved properties that include mechanical, chemical, electrical, biologic, and optical.

Abstract: A system for plasma processing using electron-free ion-ion plasmas, wherein the substrate bias waveform is synched to a pulsed RF drive. A delay is included between the end of an RF drive pulse and the start of a bias pulse, to allow the electron population to drop to approximately zero. By using a source gas mixture which has highly electronegative components, substrate bombardment with negative ions can be achieved.

Abstract: A method and apparatus for cleaning semiconductor wafers, next generation lithography (NGL) masks, and optical photomasks as well as test wafers and in service NGL and optical masks is disclosed. The method and apparatus utilize reactive gases and gas mixtures and mechanical agitation to enhance particle removal. The addition of a reactive gas process to an inert gas feed enhances the plasma cleaning process by breaking chemical bonds which form between surface particles and a substrate, consequently improving cleaning efficiency.

Abstract: A system for plasma processing using electron-free ion-ion plasmas, wherein the substrate bias waveform is synched to a pulsed RF drive. A delay is included between the end of an RF drive pulse and the start of a bias pulse, to allow the electron population to drop to approximately zero. By using a source gas mixture which has highly electronegative components, substrate bombardment with negative ions can be achieved.

Abstract: A properly designed and positioned Faraday shield/dielectric spacer/source-coil assembly is used to nearly fix the input impedance of an Inductively Coupled Plasma (ICP) source-coil, making a variable matching network almost unnecessary, and allowing for pulsed plasma processing with very little reflected power. Further, the nearly constant input-impedance also means a nearly constant standing wave pattern on the ICP source-coil and constant power deposition symmetry as well as plasma uniformity independent of RF power, gas pressure and gas composition. This is not possible without a properly designed and positioned Faraday shield because the source-coil impedance is coupled to that of the plasma and changes significantly with the plasma conditions.

Abstract: A properly designed and positioned Faraday shield/dielectric spacer/source-coil assembly is used to nearly fix the input impedance of an Inductively Coupled Plasma (ICP) source-coil, making a variable matching network almost unnecessary, and allowing for pulsed plasma processing with very little reflected power. Further, the nearly constant input-impedance also means a nearly constant standing wave pattern on the ICP source-coil and constant power deposition symmetry as well as plasma uniformity independent of RF power, gas pressure and gas composition. This is not possible without a properly designed and positioned Faraday shield because the source-coil impedance is coupled to that of the plasma and changes significantly with the plasma conditions.

Abstract: An apparatus and method for controlling the plasma potential of a plasma within a plasma chamber (50) is disclosed. The apparatus and method utilize a Faraday shielded inductive source antenna (60) to generate the plasma within the plasma chamber (50) and an electrically conductive probe (100) that is inserted into the plasma chamber (50) to regulate the plasma potential. By independent biasing of the conductive probe (100), which regulates the plasma potential, the ion energy distribution at a conductive substrate (150) within the plasma chamber (50) may be controlled.

Abstract: An apparatus for producing a plasma (70) within a vacuum chamber (50) comprising a high density plasma source (10) is disclosed wherein the source (10) comprises a top layer (13) and a bottom layer (11) electrically connected to and spaced apart from each other, in a manner to adjust the fields generated by the source (10), hence the uniformity of the plasma (70), wherein the top and bottom layers (13, 11) are formed by a plurality of conductive loops.