Patents by Inventor Lawrence Keith White

Lawrence Keith White has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20090120901
    Abstract: Aspects of the present invention provide patterned electrodes with substantially reduced or removed residue. Aspects of the present invention for removing residue are applicable to any fabricated structure including transparent electrodes. By substantially reducing or removing residue typically associated with methods used to form patterned electrodes, an improvement in performance can be realized by ensuring that the deposition of subsequent materials onto a substrate is not adversely affected by any such residue. In turn, better interconnects can be formed and better coverage of subsequent layers can be achieved. The method for producing patterned electrodes with substantially reduced or removed residue in accordance with the present invention can be used in conjunction with any known method for patterning conductors or electrodes.
    Type: Application
    Filed: October 7, 2008
    Publication date: May 14, 2009
    Inventors: Lawrence Keith White, Joseph Thomas McGinn
  • Patent number: 6057182
    Abstract: A method of making a liquid crystal display which has a layer of polysilicon on a surface of a substrate, a gate of a conductive material over and insulated from a portion of the polysilicon layer, a layer of an insulating material over the gate, and a metal layer on the insulating layer. The method includes forming a layer of an insulating material over the metal layer and then subjecting the device to a plasma containing hydrogen to diffuse the hydrogen through the insulating layers and the metal layer into the polysilicon layer.
    Type: Grant
    Filed: September 5, 1997
    Date of Patent: May 2, 2000
    Assignee: Sarnoff Corporation
    Inventors: Lawrence Alan Goodman, Grzegorz Kaganowicz, Lawrence Keith White, Harry Louis Pinch, Ronald Keith Smeltzer
  • Patent number: 5942448
    Abstract: A method of forming a contact on a body of semiconductor material within an opening in a passivation layer of silicon carbide in which the contact is a bond pad of aluminum on the semiconductor body, a barrier layer of TiW on the bond pad and over a portion of the passivation layer around the bond pad, and a gold layer on the barrier layer. In forming the contact, the TiW barrier layer is etched with an aqueous solution of hydrogen peroxide and ethylene diamine tetraacetic acid.
    Type: Grant
    Filed: February 24, 1997
    Date of Patent: August 24, 1999
    Assignee: Sarnoff Corporation
    Inventor: Lawrence Keith White