Abstract: A shipping container comprising first and second side panels, and first and second end panels connecting the first and second side panels. A pair of major upper flaps are foldably connected to respective side panels, the major upper flaps each forming half of a top panel. A pair of minor upper flaps are foldably connected to respective end panels, each of the minor upper flaps including a central tuck flap panel and a pair of gusset panels foldably connected to and overlapping the central tuck flap panel to form a tuck flap structure. Each tuck flap structure extending along an outer side of a respective end panel and including an end portion extending into an access port formed on the respective end panel.

Abstract: A shipping container comprising first and second side panels, and first and second end panels connecting the first and second side panels. A pair of major upper flaps are foldably connected to respective side panels, the major upper flaps each forming half of a top panel. A pair of minor upper flaps are foldably connected to respective end panels, each of the minor upper flaps including a central tuck flap panel and a pair of gusset panels foldably connected to and overlapping the central tuck flap panel to form a tuck flap structure. Each tuck flap structure extending along an outer side of a respective end panel and including an end portion extending into an access port formed on the respective end panel.

Abstract: Specific wavelengths to use in optical metrology of an integrated circuit can be selected using one or more selection criteria and termination criteria. Wavelengths are selected using the selection criteria, and the selection of wavelengths is iterated until the termination criteria are met.

Abstract: A hypothetical profile is used to model the profile of a structure formed on a semiconductor wafer to use in determining the profile of the structure using optical metrology. To select a hypothetical profile, sample diffraction signals are obtained from measured diffraction signals of structures formed on the wafer, where the sample diffraction signals are a representative sampling of the measured diffraction signals. A hypothetical profile is defined and evaluated using a sample diffraction signal from the obtained sample diffraction signals.

Abstract: To evaluate the adequacy of a profile model, an initial profile model is selected. The profile model includes profile model parameters to be measured in implementing types of process control to be used in controlling a fabrication process. A measurement of profile model parameters is obtained using a first metrology tool and the profile model. A measurement of the profile model parameters is obtained using a second metrology tool and the profile model. Statistical metric criteria are calculated based on the measurements of the profile model parameters obtained using the first and second metrology tools. When the calculated statistical metric criteria are not within matching requirements, the profile model is revised. When the calculated statistical metric criteria are within matching requirements, the profile model or the revised profile model is stored.

Abstract: To evaluate the adequacy of a profile model, an initial profile model is selected. The profile model includes profile model parameters to be measured in implementing types of process control to be used in controlling a fabrication process. A measurement of profile model parameters is obtained using a first metrology tool and the profile model. A measurement of the profile model parameters is obtained using a second metrology tool and the profile model. Statistical metric criteria are calculated based on the measurements of the profile model parameters obtained using the first and second metrology tools. When the calculated statistical metric criteria are not within matching requirements, the profile model is revised. When the calculated statistical metric criteria are within matching requirements, the profile model or the revised profile model is stored.

Abstract: Specific wavelengths to use in optical metrology of an integrated circuit can be selected using one or more selection criteria and termination criteria. Wavelengths are selected using the selection criteria, and the selection of wavelengths is iterated until the termination criteria are met.

Abstract: To evaluate the adequacy of a profile model, one or more types of process control to be used in controlling a fabrication process are selected. Profile model parameters and acceptable ranges for the profile model parameters are selected. A first and second metrology tools are selected. Statistical metric criteria that define an acceptable amount of variation in measurements obtained using the first and second tools are set. A profile model is selected. A measurement of the profile model parameters is obtained using the first tool and the selected profile model. A measurement of the one or more profile model parameters is obtained using the second tool. Statistical metric criteria are calculated based on the measurements of the one or more profile model parameters obtained using the first and second tools. The calculated and set statistical metric criteria are compared to evaluate the adequacy of the selected profile model.

Abstract: Specific wavelengths to use in optical metrology of an integrated circuit can be selected using one or more selection criteria and termination criteria. Wavelengths are selected using the selection criteria, and the selection of wavelengths is iterated until the termination criteria are met.

Abstract: To evaluate the adequacy of a profile model, one or more types of process control to be used in controlling a fabrication process are selected. Profile model parameters and acceptable ranges for the profile model parameters are selected. A first and second metrology tools are selected. Statistical metric criteria that define an acceptable amount of variation in measurements obtained using the first and second tools are set. A profile model is selected. A measurement of the profile model parameters is obtained using the first tool and the selected profile model. A measurement of the one or more profile model parameters is obtained using the second tool. Statistical metric criteria are calculated based on the measurements of the one or more profile model parameters obtained using the first and second tools. The calculated and set statistical metric criteria are compared to evaluate the adequacy of the selected profile model.

Abstract: To evaluate the adequacy of a profile model, one or more types of process control to be used in controlling a fabrication process are selected. Profile model parameters and acceptable ranges for the profile model parameters are selected. A first and second metrology tools are selected. Statistical metric criteria that define an acceptable amount of variation in measurements obtained using the first and second tools are set. A profile model is selected. A measurement of the profile model parameters is obtained using the first tool and the selected profile model. A measurement of the one or more profile model parameters is obtained using the second tool. Statistical metric criteria are calculated based on the measurements of the one or more profile model parameters obtained using the first and second tools. The calculated and set statistical metric criteria are compared to evaluate the adequacy of the selected profile model.

Abstract: To evaluate the adequacy of a profile model, one or more types of process control to be used in controlling a fabrication process are selected. Profile model parameters and acceptable ranges for the profile model parameters are selected. A first and second metrology tools are selected. Statistical metric criteria that define an acceptable amount of variation in measurements obtained using the first and second tools are set. A profile model is selected. A measurement of the profile model parameters is obtained using the first tool and the selected profile model. A measurement of the one or more profile model parameters is obtained using the second tool. Statistical metric criteria are calculated based on the measurements of the one or more profile model parameters obtained using the first and second tools. The calculated and set statistical metric criteria are compared to evaluate the adequacy of the selected profile model.

Abstract: A hypothetical profile is used to model the profile of a structure formed on a semiconductor wafer to use in determining the profile of the structure using optical metrology. To select a hypothetical profile, sample diffraction signals are obtained from measured diffraction signals of structures formed on the wafer, where the sample diffraction signals are a representative sampling of the measured diffraction signals. A hypothetical profile is defined and evaluated using a sample diffraction signal from the obtained sample diffraction signals.

Abstract: Specific wavelengths to use in optical metrology of an integrated circuit can be selected using one or more selection criteria and termination criteria. Wavelengths are selected using the selection criteria, and the selection of wavelengths is iterated until the termination criteria are met.

Abstract: A method and system for measuring metal electroplating barrier and seed layer thickness and profile. Using optical metrology, profiles of post-barrier deposition grating and post-seed deposition grating can be measured non-destructively. In turn, the thickness and profile of the barrier layer can be determined by subtracting the profile of the post-barrier deposition grating from the profile of the substrate damascene grating. Similarly, the thickness and profile of the seed layer can be determined by subtracting the profile of the post-seed deposition gratin from the profile of the post-barrier deposition grating.

Abstract: A method and system for measuring metal electroplating barrier and seed layer thickness and profile. Using optical metrology, profiles of post-barrier deposition grating and post-seed deposition grating can be measured non-destructively. In turn, the thickness and profile of the barrier layer can be determined by subtracting the profile of the post-barrier deposition grating from the profile of the substrate damascene grating. Similarly, the thickness and profile of the seed layer can be determined by subtracting the profile of the post-seed deposition gratin from the profile of the post-barrier deposition grating.