Abstract: An array of localized auto-focus sensors provides direct measurement of the working distance between each microscope column in the array and the substrate being imaged below. The auto-focus sensors measure the working distance between each column and the imaging substrate as it passes over a point on the substrate to be imaged. The working distance measurement from the sensors is input into a control system, which in turn outputs the required working distance adjustment to the microscope column. The control system independently adjusts microscope working distance and/or physical distance of an individual microscope column in a multi-column microscope based on auto-focus sensor input. The individual microscope columns in the multi-column microscope can also be used as the auto-focus sensor itself.

Abstract: A miniature electron beam column in combination with magnetostatic lenses to produce very high-performance miniature electron or ion beam columns. Silicon-based electron optical components provide high-accuracy formation and alignment of critical optical elements and the magnetic lenses provide low-aberration focusing or condensing elements. Accurate assembly of the silicon and magnetic components is achievable via the multilayered assembly techniques and allows for achieving high performance.

Abstract: A segmented detector device with backside illumination. The detector is able to collect and differentiate between secondary electrons and backscatter electrons. The detector includes a through-hole for passage of a primary electron beam. After hitting a sample, the reflected secondary and backscatter electrons are collected via a vertical structure having a P+/P?/N+ or an N+/N?/P+ composition for full depletion through the thickness of the device. The active area of the device is segmented using field isolation insulators located on the front side of the device.

Abstract: A segmented detector device with backside illumination. The detector is able to collect and differentiate between secondary electrons and backscatter electrons. The detector includes a through-hole for passage of a primary electron beam. After hitting a sample, the reflected secondary and backscatter electrons are collected via a vertical structure having a P+/P?/N+ or an N+/N?/P+ composition for full depletion through the thickness of the device. The active area of the device is segmented using field isolation insulators located on the front side of the device.

Abstract: A system is disclosed. In one embodiment, the system includes a scanning electron microscopy sub-system including an electron source configured to generate an electron beam and an electron-optical assembly including one or more electron-optical elements configured to direct the electron beam to the specimen. In another embodiment, the system includes one or more grounding paths coupled to the specimen, the one or more grounding paths configured to generate one or more transmission signals based on one or more received electron beam-induced transmission currents. In another embodiment, the system includes a controller configured to: generate control signals configured to cause the scanning electron microscopy sub-system to scan the portion of the electron beam across a portion of the specimen; receive the transmission signals via the one or more grounding paths; and generate transmission current images based on the transmission signals.

Abstract: Disclosed are apparatus and methods for detecting defects on a semiconductor sample. An optical inspector is first used to inspect a semiconductor sample with an aggressively predefined threshold selected to detect candidate defect and nuisance sites at corresponding locations across the sample. A high-resolution distributed probe inspector includes an array of miniature probes that are moved relative to the sample to scan and obtain a high-resolution image of each site to detect and separate the candidate defect sites from the nuisance sites. A higher-resolution probe is then used to obtain a higher-resolution image of each candidate site to obtain a high-resolution image of each site to separate real defects that adversely impact operation of any devices on the sample from the candidate defects.

Abstract: A scanning electron microscopy (SEM) system includes a plurality of electron beam sources configured to generate a primary electron beam. The SEM system includes an electron-optical column array with a plurality of electron-optical columns. An electron-optical column includes a plurality of electron-optical elements. The plurality of electron-optical elements includes a deflector layer configured to be driven via a common controller shared by at least some of the plurality of electron-optical columns and includes a trim deflector layer configured to be driven by an individual controller. The plurality of electron-optical elements is arranged to form an electron beam channel configured to direct the primary electron beam to a sample secured on a stage, which emits an electron beam in response to the primary electron beam. The electron-optical column includes an electron detector. The electron beam channel is configured to direct the electron beam to the electron detector.

Abstract: A charged particle beam column package includes an assembly (e.g., comprising a plurality of layers, which can have a component coupled to one of the layers), and a solid state detector coupled to the assembly. Further, at least one of the layers has interconnects thereon.

Abstract: A micro-electrical system, such as a lens stack for use in a scanning electron microscope, analysis tool, etc., comprises recesses and/or serrations that increase the surface path breakdown, thereby increasing reliability and enabling high voltage operations.

Abstract: A beam column array included alignment marks within to enable alignment of beams with respect to each other. Specifically, the array includes an array of beam columns, each column having at least once lens. A plurality of alignment marks are located beneath the lens. A method of using the array includes: scanning a plurality of beams in a beam column array over a plurality of alignment marks; and determining beam centroid positions of the beams with respect to each other based on data from the scanning.

Abstract: An electron beam column package comprises a plurality of layers having components, such as lenses, coupled thereto. The layers may be made of LTCC, HTCC or other layer technology.

Abstract: A micro-electrical system, such as a lens stack for use in a scanning electron microscope, analysis tool, etc., comprises recesses and/or serrations that increase the surface path breakdown, thereby increasing reliability and enabling high voltage operations.

Abstract: An electron beam imaging apparatus capable of projecting an electron beam image on a substrate comprises a vacuum chamber having a wall and a substrate support. An electron beam source, modulator, and scanner is provided to generate, modulate, and scan one or more electron beams across the substrate. A controller is capable of generating or receiving an electrical signal to communicate with the electron beam source, modulator or scanner. One or more signal convertors are capable of converting the electrical signal to an optical signal and vice versa, the signal convertors located on either side of the wall.