Patents by Inventor Lawrence N. Brigham, Jr.

Lawrence N. Brigham, Jr. has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor field oxidation process
    Patent number: 5091332
    Abstract: Front end processing for a CMOS substrate resulting in the formation of n-wells, p-wells, channel stops and field oxide regions. Both the n-type and p-type dopant are implanted through silicon nitride members with one type dopant being first blocked by a first layer of photoresist and the second dopant by a second layer of photoresist. The field oxide regions are grown after the first dopant is implanted. Relatively low level ion implantation is used and additional threshold adjusting implants are not needed.
    Type: Grant
    Filed: November 19, 1990
    Date of Patent: February 25, 1992
    Assignee: Intel Corporation
    Inventors: Mark T. Bohr, Lawrence N. Brigham, Jr., Shahab Hossaini