Patents by Inventor Lawrence P. Bourget

Lawrence P. Bourget has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Use of pulsed-DC wafer bias for filling vias/trenches with metal in HDP physical vapor deposition
    Patent number: 6051114
    Abstract: The present invention provides a method and apparatus for preferential PVD conductor fill in an integrated circuit structure. The present invention utilizes a high density plasma for sputter deposition of a conductive layer on a patterned substrate, and a pulsed DC power source capacitively coupled to the substrate to generate an ion current at the surface of the substrate. The ion current prevents sticking of the deposited material to the field areas of the patterned substrate, or etches deposited material from the field areas to eliminate crowning or cusping problems associated with deposition of a conductive material in a trench, hole or via formed on the substrate.
    Type: Grant
    Filed: June 23, 1997
    Date of Patent: April 18, 2000
    Assignee: Applied Materials, Inc.
    Inventors: Tse-Yong Yao, Zheng Xu, Kenny King-tai Ngan, Xing Chen, John Urbahn, Lawrence P. Bourget
  • High growth rate plasma diamond deposition process and method of controlling same
    Patent number: 5518759
    Abstract: A process for depositing diamond on a substrate using a microwave plasma generator including introducing a feed which includes diamond forming constituents in a desired ratio to the microwave plasma generator, and providing sufficient microwave power to the microwave plasma generator to produce a greenish-colored plasma which emits a spectrum monitored to maintain a relative emission intensity ratio of two of the constituents in a predetermined range, for depositing high quality diamond at an extremely high rate on the substrate placed proximate or in the plasma.
    Type: Grant
    Filed: January 23, 1995
    Date of Patent: May 21, 1996
    Assignee: Applied Science and Technology, Inc.
    Inventors: Evelio Sevillano, Lawrence P. Bourget, Richard S. Post
  • High growth rate plasma diamond deposition process and method of controlling same
    Patent number: 5405645
    Abstract: A process for depositing diamond on a substrate using a microwave plasma generator including providing carbon, hydrogen and oxygen in a desired ratio to the microwave plasma generator, and providing sufficient microwave power to the microwave plasma generator to produce a greenish-colored plasma with the C.sub.2 emission at 5165 Angstroms (.ANG.) at a level of from 0.5 to 50 times the atomic hydrogen alpha emission level at 6563 .ANG., for depositing high quality diamond at an extremely high rate on the substrate placed proximate or in the plasma.
    Type: Grant
    Filed: July 28, 1993
    Date of Patent: April 11, 1995
    Assignee: Applied Science and Technology Inc.
    Inventors: Evelio Sevillano, Lawrence P. Bourget, Richard S. Post