Abstract: A method and structure for a sample processing apparatus that uses a vacuum enclosure is disclosed. A focused ion beam tool, sputter target, movable stage, and hinged mount are all included within the vacuum enclosure. The hinged mount includes a sample mounting portion, for holding a sample being processed in the vacuum enclosure, and a counterweight portion. The counterweight portion is connected to the sample mounting portion at an approximate right angle to the sample mounting portion. More specifically, one end of the sample mounting portion is connected to one end of the counterweight portion, such that the sample mounting portion and the counterweight portion form an approximate right angle. There is also an axis around which the mount rotates. The axis passes through the sample mounting portion and the counterweight portion at a location where the sample mounting portion and the counterweight portion connect to one another.

Abstract: A method and structure for the electrical characterization of a semiconductor device comprising, first, forming a hole having a diameter less than 0.15 ?m, wherein the hole is created using focused ion beam (FIB) etching, and through at least a protective cap layer formed over the device. The FIB etching occurs in an electron mode using a beam current less than 35 ?A with an aperture size less than 50 ?m, and at an acceleration voltage of about 50 kV. Second, the surface of the hole is coated with a metal, preferably using chemical vapor deposition (CVD) and preferably using a FIB device. Third, a metal pad is deposited, preferably by FIB CVD, over the hole. Fourth, the pad is probed to determine characteristics and/or detect defects of the electrical device. The present invention allows for electrical characterization without causing damage to the device or its features.

Abstract: A method of focused ion beam milling of a copper on a sample, and a focused ion beam apparatus. The method comprises the steps of exposing an area of copper on the sample; and forming a given feature in the copper area by using the focused ion beam to draw a mill box in the copper area, scanning the focused ion beam across the mill box for an extended period of time to remove a portion of the copper in the copper area and thereby to form the given feature, and introducing tetramethylcyclotetrasiloxane (TMCTS) in said area during the scanning step. After the copper feature is formed, a very light dose of XeF2 may be introduced to clean up any residue that may have formed.

Abstract: A method and structure for the electrical characterization of a semiconductor device comprising, first, forming a hole having a diameter less than 0.15 &mgr;m, wherein the hole is created using focused ion beam (FIB) etching, and through at least a protective cap layer formed over the device. The FIB etching occurs in an electron mode using a beam current less than 35 &rgr;A with an aperture size less than 50 &mgr;m, and at an acceleration voltage of about 50 kV. Second, the surface of the hole is coated with a metal, preferably using chemical vapor deposition (CVD) and preferably using a FIB device. Third, a metal pad is deposited, preferably by FIB CVD, over the hole. Fourth, the pad is probed to determine characteristics and/or detect defects of the electrical device. The present invention allows for electrical characterization without causing damage to the device or its features.

Abstract: A method and structure for the electrical characterization of a semiconductor device comprising, first, forming a hole having a diameter less than 0.15 &mgr;m, wherein the hole is created using focused ion beam (FIB) etching, and through at least a protective cap layer formed over the device. The FIB etching occurs in an electron mode using a beam current less than 35 &rgr;A with an aperture size less than 50 &mgr;m, and at an acceleration voltage of about 50 kV. Second, the surface of the hole is coated with a metal, preferably using chemical vapor deposition (CVD) and preferably using a FIB device. Third, a metal pad is deposited, preferably by FIB CVD, over the hole. Fourth, the pad is probed to determine characteristics and/or detect defects of the electrical device. The present invention allows for electrical characterization without causing damage to the device or its features.

Abstract: A method and structure for the electrical characterization of a semiconductor device comprising, first, forming a hole having a diameter less than 0.15 &mgr;m, wherein the hole is created using focused ion beam (FIB) etching, and through at least a protective cap layer formed over the device. The FIB etching occurs in an electron mode using a beam current less than 35 &rgr;A with an aperture size less than 50 &mgr;m, and at an acceleration voltage of about 50 kV. Second, the surface of the hole is coated with a metal, preferably using chemical vapor deposition (CVD) and preferably using a FIB device. Third, a metal pad is deposited, preferably by FIB CVD, over the hole. Fourth, the pad is probed to determine characteristics and/or detect defects of the electrical device. The present invention allows for electrical characterization without causing damage to the device or its features.