Abstract: Placement of a field plate in a field-effect transistor is optimized by using multiple dielectric layers such that a first end of field plate is separated from a channel region of the transistor by a first set of one or more distinct dielectric material layers. A second end of the field plate overlies the channel region and a gate electrode from which it is separated by the first set of dielectric layers and one or more additional dielectric layers.

Abstract: A semiconductor device includes a semiconductor substrate configured to include a channel, first and second ohmic contacts supported by the semiconductor substrate, in ohmic contact with a contact region formed within the semiconductor substrate, and spaced from one another for current flow between the first and second ohmic contacts through the channel, and first and second dielectric layers supported by the semiconductor substrate. At least one of the first and second ohmic contacts extends through respective openings in the first and second dielectric layers. The second dielectric layer is disposed between the first dielectric layer and a surface of the semiconductor substrate, and the second dielectric layer includes a wet etchable material having an etch selectivity to a dry etchant of the first dielectric layer.

Abstract: A semiconductor device includes a semiconductor substrate configured to include a channel, first and second ohmic contacts supported by the semiconductor substrate, in ohmic contact with a contact region formed within the semiconductor substrate, and spaced from one another for current flow between the first and second ohmic contacts through the channel, and first and second dielectric layers supported by the semiconductor substrate. At least one of the first and second ohmic contacts extends through respective openings in the first and second dielectric layers. The second dielectric layer is disposed between the first dielectric layer and a surface of the semiconductor substrate, and the second dielectric layer includes a wet etchable material having an etch selectivity to a dry etchant of the first dielectric layer.

Abstract: An electronic component includes a semiconductor substrate (101) with two surfaces (106, 108), a semiconductor device (102) at the first surface of the semiconductor substrate (101), and an electrically conductive layer at the second surface of the semiconductor substrate (101) wherein a first portion (123) of the electrically conductive layer is electrically coupled to the semiconductor device (102) and is located at a central portion and at corners of the second surface of the semiconductor substrate (101).

Abstract: A method of manufacturing a semiconductor device includes providing an apparatus (210, 510) having tabs (212, 214, 412, 414) for holding and separating semiconductor substrates wherein a first tab (212, 412) is different from a second tab (214, 414), using the first tab (212, 412) to support a semiconductor substrate (224) wherein the second tab (214, 414) does not support the semiconductor substrate (224), and exposing the semiconductor substrate (224) to a chemical to move the semiconductor substrate (224) towards the second tab (214, 414) without removing the semiconductor substrate (224) from the apparatus (210, 510).