Abstract: A device including a ferroelectric memory and methods of manufacturing the same are provided. In one embodiment, the device includes a semiconductor die with an integrated circuit fabricated thereon, a stress buffer die mounted to the semiconductor die overlying the integrated circuit, and a molding compound encapsulating the semiconductor die and the stress buffer die. Generally the integrated circuit includes a ferroelectric memory. In some embodiments, the device further includes a polyimide layer between the stress buffer and the semiconductor die. Other embodiments are also provided.