Abstract: An improved machine vise, particularly well suited for use on milling machines and the like, having an improved arrangement for securely holding workpieces of irregular shapes or several different, diversely sized workpieces simultaneously. The vise is provided with a fixed jaw and two movable jaws mounted in a side by side relationship such that each jaw is free to move back and forth into and out of a gripping relationship with the object being clamped. The two movable jaws are yoke driven on a shaft such that a single forward thrust of the yoke exerts a forward and downward pressure to move both jaws forward while at the same time allowing for a translational motion between said adjacent jaws. These jaws can thus simultaneously grip and secure individual workpieces of different dimensions or differently sized portions or cross-sections of the same workpiece. Each jaw may also be provided with individually mounted fingers that pivot into the best gripping relationship with the object being clamped.

Abstract: A machine vise for holding workpieces on a milling machine or the like comprises a pair of movable jaws arranged to move in parallel and to cooperate with a fixed jaw for holding workpieces for machining. A yoke is pivotally mounted with respect to the jaws and operates to provide equal pressures for gripping with equal pressure separate workpieces or different parts of the same workpieces.

Abstract: A field effect transistor (FET) preferably employs an epitaxial layer of indium gallium arsenide as its active layer. On the surface of the active layer, ohmic source and drain contacts are spaced from respectively opposite sides of a Schottky barrier (rectifying) gate electrode. The active layer is grown over an epitaxial transition layer which is graded from gallium arsenide to indium gallium arsenide and is doped with chromium or oxygen to be semi-insulating. The transition layer is in turn formed over a bulk, intrinsic layer of gallium arsenide. High speed operation of the FET is obtainable because the active layer has excellent electron transport characteristics. Other materials suitable for the active layer are indium arsenide phosphide and indium gallium arsenide phosphide.

Abstract: A cell for converting received light energy to electrical energy comprises, in the simplest embodiment, four layers of differing types of semiconductive material stacked so as to form three opposite conductivity junctions. The outer two, "active", junctions are formed of confronting layers with matched lattice constants so as to provide a plurality of energy converters. The center, "connective", junction is formed by two confronting intermediate layers which have purposely mismatched lattice constants so as to provide a lattice defect site surrounding the center junction. Majority carriers (electrons and holes) will recombine at the lattice defects. This will cause the connective junction, although of apparently reverse-biased opposite conductivity type layers, to act as a low resistance ohmic connection or substantial short circuit so as to connect the energy converting portions in series.