Patents by Inventor Lawrence Y. Lin

Lawrence Y. Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Device isolation technology by liquid phase deposition
    Patent number: 5565376
    Abstract: A new method of forming device isolation regions on a silicon substrate is provided.
    Type: Grant
    Filed: July 12, 1994
    Date of Patent: October 15, 1996
    Assignee: United Microelectronics Corp.
    Inventors: Water Lur, Lawrence Y. Lin
  • Process on thickness control for silicon-on-insulator technology
    Patent number: 5449638
    Abstract: A method for forming a thin, uniform top silicon layer using bonded-wafer SOI technology is described. A dielectric layer is formed on a first surface of a first silicon substrate. A trench is formed in a first surface of a second silicon substrate. A polishing stopper is formed in the trench. A second dielectric layer with a smooth top surface is formed over the polishing stopper and over the first surface of the second silicon substrate. The smooth top surface of the second dielectric layer of the second silicon substrate is bonded to the dielectric layer of the first silicon substrate. Material is removed from the exposed surface of the second silicon substrate to form the silicon layer with well-controlled thickness, having a top surface co-planar with the polishing stopper.
    Type: Grant
    Filed: June 6, 1994
    Date of Patent: September 12, 1995
    Assignee: United Microelectronics Corporation
    Inventors: Gary Hong, Chen-Chiu Hsue, H. J. Wu, Lawrence Y. Lin
  • Isolation and substrate connection for a bipolar integrated circuit
    Patent number: 4721682
    Abstract: A structure for isolating a bipolar transistor (100) from an adjacent transistor includes a first silicon dioxide isolation region (110) laterally surrounding the transistor and a conductive channel stop region (112) laterally surrounding the silicon dioxide isolation region. The channel stop region allows electrical potential of the substrate (102) to be controlled and the silicon dioxide isolation region prevents the channel stop from contacting the transistor.
    Type: Grant
    Filed: September 25, 1985
    Date of Patent: January 26, 1988
    Assignee: Monolithic Memories, Inc.
    Inventors: Scott O. Graham, Lawrence Y. Lin, Hua T. Chua
  • Method for off-orientation point rotation sawing of crystalline rod material
    Patent number: 4228578
    Abstract: A method is provided for point rotation sawing of crystalline rod material at off-orientation angles wherein the crystalline rod is encapsulated in a molding media forming a cylindrical geometric encapsulation containing the rod with its crystallographic axis at an angle to the cylindrical axis of encapsulation, the angle coinciding with the off-orientation requirement. The encapsulation cylinder is rotated about its axis and contacted by sawing means at one or more points tangent to the cylinder surface and perpendicular to the cylinder's axis of rotation resulting in the sawing of a thin wafer from a cylinder which is inclusive of an off-orientation crystalline material wafer.
    Type: Grant
    Filed: January 15, 1979
    Date of Patent: October 21, 1980
    Assignee: Monsanto Company
    Inventors: Lawrence Y. Lin, Henry W. Gutsche, James A. Collier