Abstract: An optoelectronic semiconductor device and a method for forming an optoelectronic semiconductor device are disclosed. In an embodiment a device includes a carrier having a main plane of extension, at least one semiconductor chip arranged on the carrier, a frame arranged on the carrier and surrounding the semiconductor chip in lateral directions which are parallel to the main plane of extension of the carrier and a conversion layer covering the at least one semiconductor chip and the frame, wherein the at least one semiconductor chip extends further in a vertical direction than the frame, wherein the semiconductor chip is configured to emit electromagnetic radiation, and wherein the frame and the semiconductor chip are spaced from each other in the lateral directions by a gap.

Abstract: An optoelectronic semiconductor device includes a substrate with a first main side and a second main side. A plurality of light-emitting semiconductor chips is distributed over the first main side and over the second main side. A molding compound encloses the light-emitting semiconductor chips in a lateral direction. The molding compound levels with the light-emitting semiconductor chips in a direction away from the substrate. The molding compound has a top side facing away from the substrate. A plurality of planar electrical interconnects run on the top side and electrically connects the light-emitting semiconductor chips on their radiation exit sides facing away from the substrate.

Abstract: An optoelectronic semiconductor device and a method for forming an optoelectronic semiconductor device are disclosed. In an embodiment a device includes a carrier having a main plane of extension, at least one semiconductor chip arranged on the carrier, a frame arranged on the carrier and surrounding the semiconductor chip in lateral directions which are parallel to the main plane of extension of the carrier and a conversion layer covering the at least one semiconductor chip and the frame, wherein the at least one semiconductor chip extends further in a vertical direction than the frame, wherein the semiconductor chip is configured to emit electromagnetic radiation, and wherein the frame and the semiconductor chip are spaced from each other in the lateral directions by a gap.