Patents by Inventor Leder Shiu

Leder Shiu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Dual damascene method employing void forming via filling dielectric layer
    Patent number: 6653223
    Abstract: Within a method for forming a dual damascene aperture within a microelectronic fabrication, there is employed a patterned first dielectric layer which defines at least part of a via. The patterned first dielectric layer in turn has formed thereover a blanket second dielectric layer formed such as to form a void at the location of the via and thus form an incompletely filled via. Thus when forming a trench within the blanket second dielectric layer contiguous with a re-opened via formed from the incompletely filled via, the void provides for enhanced dimensional control when forming the re-opened via from the incompletely filled via.
    Type: Grant
    Filed: July 9, 2002
    Date of Patent: November 25, 2003
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd
    Inventor: Leder Shiu