Abstract: Disclosed is a method for producing an array (20) of p-intrinsic-n light detectors, as is an array produced in accordance with the method. The method includes providing a wafer (1); forming a first layer (2) having a first type of electrical conductivity (e.g., n-type) over a surface of the wafer; forming a second layer (3) that is an intrinsic layer on the first layer and, for each light detector, implanting or diffusing a region (9A) into a surface of the second layer that is opposite the surface on the first layer, the region (9A) having a second type of electrical conductivity (e.g., p-type). The method further includes forming an opening or aperture, referred to herein as a V-groove (6), through the second layer at least to the first layer; and electrically contacting with a first electrical contact (15, 9B, 13B) the first layer through the V-groove.

Abstract: Disclosed is a method for producing an array (20) of p-intrinsic-n light detectors, as is an array produced in accordance with the method. The method includes providing a wafer (1); forming a first layer (2) having a first type of electrical conductivity (e.g., n-type) over a surface of the wafer; forming a second layer (3) that is an intrinsic layer on the first layer and, for each light detector, implanting or diffusing a region (9A) into a surface of the second layer that is opposite the surface on the first layer, the region (9A) having a second type of electrical conductivity (e.g., p-type). The method further includes forming an opening or aperture, referred to herein as a V-groove (6), through the second layer at least to the first layer; and electrically contacting with a first electrical contact (15, 9B, 13B) the first layer through the V-groove.

Abstract: The photo-sensitive detector region of conventional Impurity Band Conduction (IBC) detector (also known as a Blocked Impurity Band [BIB] detector) is divided into a wide detection (or collection) region and a narrow gain region by means of tailoring the doping profile. The narrow gain region is that portion of the photo-sensitive detector region closest to the blocking layer, where the electric field is the largest, whose As concentration is made smaller (in the range of 2 to 5.times.10.sup.17 cm.sup.-3) to increase the impact ionization coefficient by decreasing the electron scattering. The wide detection region is that portion of the photo-sensitive detector region furthest from the blocking layer, where the electric field is smallest and the As concentration is larger (in the range of 5 to 8.times.10.sup.17 cm.sup.-3) to decrease the impact ionization coefficient by increasing the electron scattering.