Patents by Inventor Lea-Hwung Leu
Lea-Hwung Leu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10144645Abstract: A method for preparing spherical aluminum oxynitride powder, comprising the steps of (A) providing an alumina powder and a resin, both of which are then dispersed and dissolved in a solvent to form a mixed slurry; (B) subjecting the mixed slurry to spray drying to form a spherical powder; (C) subjecting the spherical powder to a carbonization treatment under an inert atmosphere to form a carbonized spherical powder; (D) subjecting the carbonized spherical powder to carbothermic reduction in a nitrogen-containing atmosphere at a temperature of 1450° C. to 1550° C.; (E) keeping the spherical powder that has been subjected to carbothermic reduction in the nitrogen-containing atmosphere to carry out a nitridation reaction at a temperature of 1700° C. to 1730° C., forming a nitrided spherical aluminum oxynitride powder; (F) subjecting the nitrided spherical aluminum oxynitride powder to decarbonization in an oxygen-containing atmosphere to form the spherical aluminum oxynitride powder.Type: GrantFiled: July 27, 2017Date of Patent: December 4, 2018Assignee: NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGYInventors: Kuan-Ting Lai, Chun-Te Wu, Cheng-Hung Shih, Yang-Kuo Kuo, Lea-Hwung Leu
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Patent number: 9814143Abstract: A method of forming a pattern with high aspect ratio on a polycrystalline aluminum nitride substrate comprises the steps of (A) providing an aluminum nitride substrate and forming a barrier layer on the aluminum nitride substrate; (B) etching the barrier layer with an energy beam to form at least one recess in the barrier layer; (C) plasma etching the substrate to deepen the recess into the aluminum nitride substrate; (D) removing the barrier layer to obtain the aluminum nitride substrate having at least one pattern with high aspect ratio. The method uses the energy beam to directly form a pattern on the barrier layer, and further employs plasma etching to prepare the aluminum nitride substrate having a pattern with high aspect ratio quickly and effectively.Type: GrantFiled: November 28, 2016Date of Patent: November 7, 2017Assignee: National Chung Shan Institute of Science and TechnologyInventors: Chung-Yen Lu, Yi-Hsiuan Yu, Chia-Ting Lin, Lea-Hwung Leu
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Patent number: 9216906Abstract: A method for manufacturing aluminum nitride powder includes steps of: preparing a polymer powder, a wood powder having grain size similar with that of the polymer powder, and an alumina powder; and mixing the polymer powder, the wood powder and the alumina powder uniformly and forming granules to be carried out a single-replacement reaction by exposing the granules in a nitrogen-containing atmosphere at a temperature of 1680-1850° C.Type: GrantFiled: December 25, 2013Date of Patent: December 22, 2015Assignee: NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGYInventors: Yang-Kuao Kuo, Yung-Han Huang, Cheng-Hung Shih, Lea-Hwung Leu
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Publication number: 20150175421Abstract: A method for manufacturing aluminum nitride powder includes steps of: preparing a polymer powder, a wood powder having grain size similar with that of the polymer powder, and an alumina powder; and mixing the polymer powder, the wood powder and the alumina powder uniformly and forming granules to be carried out a single-replacement reaction by exposing the granules in a nitrogen-containing atmosphere at a temperature of 1680-1850° C.Type: ApplicationFiled: December 25, 2013Publication date: June 25, 2015Applicant: Chung-Shan Institute of Science and Technology, Armaments Bureau, M.N.D.Inventors: Yang-Kuao Kuo, Yung-Han Huang, Cheng-Hung Shih, Lea-Hwung Leu
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Publication number: 20150171052Abstract: A substrate of semiconductor is formed by a method including preparing two aluminum nitride (AlN) substrates; forming a first buffer layer on a surface of each AlN substrate; forming a second buffer layer on a free surface of each first buffer layer; and providing an oxygen free copper (OFC) layer to be securely sandwiched between the second buffer layers through a sintering process. Said substrate is a sandwiched structure and is able to be directly carried out coating process to grow semiconductor device thereon.Type: ApplicationFiled: December 18, 2013Publication date: June 18, 2015Applicant: Chung-Shan Institute of Science and Technology, Armaments Bureau, M.N.DInventors: Yang-Kuao Kuo, Cheng-Hung Shih, Jian-Long Ruan, Lea-Hwung Leu
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Publication number: 20150155194Abstract: A method of preparing a heterogeneous stacked co-fired ceramic for use in an aluminum nitride-based electrostatic chuck includes providing a first aluminum nitride blank layer; applying a metal ink to the first aluminum nitride blank layer to form thereon an electrostatic electrode layer by screen printing, wherein the metal ink mainly contains a metal of high melting point; stacking a second aluminum nitride blank layer on the electrostatic electrode layer; laminating the first aluminum nitride blank layer, the electrostatic electrode layer, and the second aluminum nitride blank layer (collectively known as a heterogeneous ceramic) together; and co-firing the laminated heterogeneous ceramic in accordance with a sintering temperature rising curve to prepare the heterogeneous stacked co-fired ceramic characterized by reduced differences in sintering shrinkage ratio between the electrostatic electrode and aluminum nitride blank and enhanced strength and adhesion of the interface between the electrostatic electrType: ApplicationFiled: May 19, 2014Publication date: June 4, 2015Applicant: NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGYInventors: YANG-KUO KUO, JIAN-LONG RUAN, CHENG-HUNG SHIH, LEA-HWUNG LEU
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Patent number: 8829537Abstract: Disclosed is an integrated apparatus including an isolative substrate, a plurality of driver chips provided on a side of the isolative substrate, a power supply provided on the side of the isolative substrate and electrically connected to the driver chips, and LED chips provided on another side of the isolative substrate and electrically connected to the driver chips. Thus, the driver chips, the power supply and the LED chips are integrated on the isolative substrate. The production is easy. The integrated apparatus is not vulnerable to surges and lightning strikes. Electromagnetic interferences are reduced. Heat radiation of the integrated apparatus is excellent so that the LED chips are protected from thermal effect.Type: GrantFiled: September 22, 2011Date of Patent: September 9, 2014Assignee: Chung-Shan Institute of Science and Technology, Armaments, Bureau, Ministry of National DefenseInventors: Yang-Kuao Kuo, Chin-Peng Wang, Lea-Hwung Leu
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Patent number: 8808583Abstract: A method for manufacturing a conductive adhesive containing a one-dimensional (1D) conductive nanomaterial is revealed. The method produces a conductive adhesive by mixing the 1D conductive nanomaterial with water-based or solvent-based resin solution. The conductive adhesive has good industrial applications, not influenced by industrial adaptability and environmental adaptability. The conductive adhesive obtained also has better conductivity. Moreover, the amount of the 1D conductive nanomaterial used in the present invention is less than the amount of conductive nanoparticles used and the cost is reduced effectively.Type: GrantFiled: June 30, 2010Date of Patent: August 19, 2014Assignee: Chung Shan Institute of Science and Technology Armaments Bureau, M.N.D.Inventors: Yi-Hsiuan Yu, Bao-Yann Lin, Ming-Hsiung Wei, Lea-Hwung Leu, Gou-Hong Yiin, Chen-Chi M Ma
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Publication number: 20130052276Abstract: Disclosed is a method for making an antimicrobial material from 1D nanometer silver that does not accumulate in a human body. At first, 1D nanometer silver is mixed in hydrophilic solution to produce 1D nanometer silver solution. Then, adhesive is blended in the 1D nanometer silver solution to produce the antimicrobial material. The antimicrobial material may be used in antimicrobial liquid, antimicrobial dressing or antimicrobial composite. Human skin can easily block the 1D nanometer silver. Therefore, the 1D nanometer silver does not enter or accumulate in the human body. Yet, the antimicrobial material exhibits a high bactericidal rate.Type: ApplicationFiled: August 31, 2011Publication date: February 28, 2013Applicant: Chung-Shan Institute of Science and Technology Armaments, Bureau, ministry of National DefenceInventors: Yi-Hsiuan Yu, Ming-Hsiung Wei, Lea-Hwung Leu, Kai-Yai Chang, Shen-fey Yeh, Fen-Yu Chung, Chen-Chi Ma
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Publication number: 20130032826Abstract: Disclosed is an integrated apparatus including an isolative substrate, a plurality of driver chips provided on a side of the isolative substrate, a power supply provided on the side of the isolative substrate and electrically connected to the driver chips, and LED chips provided on another side of the isolative substrate and electrically connected to the driver chips. Thus, the driver chips, the power supply and the LED chips are integrated on the isolative substrate. The production is easy. The integrated apparatus is not vulnerable to surges and lightning strikes. Electromagnetic interferences are reduced. Heat radiation of the integrated apparatus is excellent so that the LED chips are protected from thermal effect.Type: ApplicationFiled: September 22, 2011Publication date: February 7, 2013Applicant: Chung-Shan Institute of Science and Technology, Armaments, Bureau, Ministry of National DefenseInventors: Yang-Kuao Kuo, Chin-Peng Wang, Lea-Hwung Leu
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Publication number: 20120001130Abstract: A method for manufacturing a conductive adhesive containing a one-dimensional (1D) conductive nanomaterial is revealed. The method produces a conductive adhesive by mixing the 1D conductive nanomaterial with water-based or solvent-based resin solution. The conductive adhesive has good industrial applications, not influenced by industrial adaptability and environmental adaptability. The conductive adhesive obtained also has better conductivity. Moreover, the amount of the 1D conductive nanomaterial used in the present invention is less than the amount of conductive nanoparticles used and the cost is reduced effectively.Type: ApplicationFiled: June 30, 2010Publication date: January 5, 2012Applicant: CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY, ARMAMENTS BUREAU, M.N.D.Inventors: Yi-Hsiuan Yu, Bao-Yann Lin, Ming-Hsiung Wei, Lea-Hwung Leu, Gou-Hong Yiin, Chen-Chi M. Ma
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Publication number: 20100242679Abstract: The invention discloses a method for continuously fabricating silver nanowires. The method mixes a glycol solution of a silver salt and a glycol solution of a polyvinyl pyrrolidone, and the mixed solution reacts in a temperature range and a time range to form the silver nanowires. The polyvinyl pyrrolidone has high boiling point and reduction ability so as to reduce the silver salt to the silver nanoparticles, and simultaneously, the polyvinyl pyrrolidone can provide barriers for limiting the particle growth. Besides, the oxygen functional groups on the long chains of the polyvinyl pyrrolidone can keep the stably one-dimensional growth of the silver nanoparticles to form the silver nanowires during the aging process.Type: ApplicationFiled: March 29, 2009Publication date: September 30, 2010Inventors: YI-HSIUAN YU, Bao-Yann Lin, Ming-Hsiung Wei, Cheng-En Shen, Lea-Hwung Leu, Kai-Yai Chang, Chen-Chim Ma