Patents by Inventor Leah Maylott

Leah Maylott has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Antimony compounds useful for deposition of antimony-containing materials
    Patent number: 9034688
    Abstract: Precursors for use in depositing antimony-containing films on substrates such as wafers or other microelectronic device substrates, as well as associated processes of making and using such precursors, and source packages of such precursors. The precursors are useful for deposition of Ge2Sb2Te5 chalcogenide thin films in the manufacture of nonvolatile Phase Change Memory (PCM) or for the manufacturing of thermoelectric devices, by deposition techniques such as chemical vapor deposition (CVD) and atomic layer deposition (ALD).
    Type: Grant
    Filed: March 18, 2014
    Date of Patent: May 19, 2015
    Assignee: ENTEGRIS, INC.
    Inventors: Tianniu Chen, William Hunks, Philip S. H. Chen, Chongying Xu, Leah Maylott
  • ANTIMONY COMPOUNDS USEFUL FOR DEPOSITION OF ANTIMONY-CONTAINING MATERIALS
    Publication number: 20140206136
    Abstract: Precursors for use in depositing antimony-containing films on substrates such as wafers or other microelectronic device substrates, as well as associated processes of making and using such precursors, and source packages of such precursors. The precursors are useful for deposition of Ge2Sb2Te5 chalcogenide thin films in the manufacture of nonvolatile Phase Change Memory (PCM) or for the manufacturing of thermoelectric devices, by deposition techniques such as chemical vapor deposition (CVD) and atomic layer deposition (ALD).
    Type: Application
    Filed: March 18, 2014
    Publication date: July 24, 2014
    Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.
    Inventors: Tianniu Chen, William Hunks, Philip S.H. Chen, Chongying Xu, Leah Maylott
  • Antimony compounds useful for deposition of antimony-containing materials
    Patent number: 8674127
    Abstract: Precursors for use in depositing antimony-containing films on substrates such as wafers or other microelectronic device substrates, as well as associated processes of making and using such precursors, and source packages of such precursors. The precursors are useful for deposition of A Ge2Sb2Te5 chalcogenide thin films in the manufacture of nonvolatile Phase Change Memory (PCM) or for the manufacturing of thermoelectric devices, by deposition techniques such as chemical vapor deposition (CVD) and atomic layer deposition (ALD).
    Type: Grant
    Filed: April 30, 2009
    Date of Patent: March 18, 2014
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Tianniu Chen, William Hunks, Philip S. H. Chen, Chongying Xu, Leah Maylott
  • ANTIMONY COMPOUNDS USEFUL FOR DEPOSITION OF ANTIMONY-CONTAINING MATERIALS
    Publication number: 20110111556
    Abstract: Precursors for use in depositing antimony-containing films on substrates such as wafers or other microelectronic device substrates, as well as associated processes of making and using such precursors, and source packages of such precursors. The precursors are useful for deposition of A Ge2Sb2Te5 chalcogenide thin films in the manufacture of nonvolatile Phase Change Memory (PCM) or for the manufacturing of thermoelectric devices, by deposition techniques such as chemical vapor deposition (CVD) and atomic layer deposition (ALD).
    Type: Application
    Filed: April 30, 2009
    Publication date: May 12, 2011
    Applicant: Advanced Technology Materials, Inc.
    Inventors: Tianniu Chen, William Hunks, Philip S.H. Chen, Chongying Xu, Leah Maylott
  • ZIRCONIUM, HAFNIUM, TITANIUM, AND SILICON PRECURSORS FOR ALD/CVD
    Publication number: 20100112211
    Abstract: Zirconium, hafnium, titanium and silicon precursors useful for atomic layer deposition (ALD) and chemical vapor deposition (CVD) of corresponding zirconium-containing, hafnium-containing, titanium-containing and silicon-containing films, respectively. The disclosed precursors achieve highly conformal deposited films characterized by minimal carbon incorporation.
    Type: Application
    Filed: April 13, 2008
    Publication date: May 6, 2010
    Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.
    Inventors: Chongying Xu, Jeffrey F. Roeder, Tianniu Chen, Bryan C. Hendrix, Brian Benac, Thomas M. Cameron, David W. Peters, Gregory T. Stauf, Leah Maylott