Abstract: A method of preparing primary refractory metals (e.g., primary tantalum metal) by contacting a particulate refractory metal oxide (e.g., tantalum pentoxide) with a heated gas (e.g., a plasma), is described. The heated gas comprises hydrogen gas. The temperature range of the heated gas and the mass ratio of hydrogen gas to refractory metal oxide are each selected such that: (i) the heated gas comprises atomic hydrogen; (ii) the refractory metal oxide feed material is substantially thermodynamically stabilized (i.e., the concurrent formation of suboxides that are not reduced by atomic hydrogen is minimized); and (iii) the refractory metal oxide is reduced by contact with the heated gas, thereby forming primary refractory metal (e.g., primary tantalum metal and/or primary niobium metal).

Abstract: A method of producing a refractory metal powder by (A) combining (i) an oxide particle component and (ii) a reducing agent; (B) forming a substantially uniform mixture of (i) and (ii); (C) continuously feeding the mixture into a furnace; (D) igniting the mixture at a reaction zone and starting a reaction that is sufficiently exothermic to form a high temperature flash; (E) starting a reaction that is sufficiently exothermic to form a high temperature self-sustaining flash; and (F) producing a free-flowing reduced oxide powder.

Abstract: The allows: Ta—Si, Nb—Si, TaN—Si, NbN—Si and variants are used as enhanced powder anode substrates for electrolytic capacitor anodes (sintered powder masses) with dielectric oxide formation at walls of the internal pores.

Abstract: The allows: Ta—Si, Nb—Si, TaN—Si, NbN—Si and variants are used as enhanced powder anode substrates for electrolytic capacitor anodes (sintered powder masses) with dielectric oxide formation at walls of the internal pores.