Abstract: Methods and apparatus for processing a substrate. For example, a processing chamber can include a power source, an amplifier connected to the power source, comprising at least one of a gallium nitride (GaN) transistor or a gallium arsenide (GaAs) transistor, and configured to amplify a power level of an input signal received from the power source to heat a substrate in a process volume, and a cooling plate configured to receive a coolant to cool the amplifier during operation.

Abstract: Methods and apparatus for processing a substrate. For example, a processing chamber can include a power source, an amplifier connected to the power source, comprising at least one of a gallium nitride (GaN) transistor or a gallium arsenide (GaAs) transistor, and configured to amplify a power level of an input signal received from the power source to heat a substrate in a process volume, and a cooling plate configured to receive a coolant to cool the amplifier during operation.

Abstract: A radio frequency transceiver having a printed circuit board (PCB) on which are located a plurality of components, the PCB being sandwiched between a base and a cover. The cover having a plurality of components for accommodating each of the plurality of components to separate the plurality of components into a number of virtual modules. All interconnects between the number of virtual modules are in the PCB. The PCB has a radio frequency (RF) layer, a RF ground layer, a direct current (DC) layer, and a DC ground layer. There is a plurality of via holes from the RF ground layer to the DC ground layer to provide virtual RF ground.