Abstract: The presently disclosed subject matter relates to electromechanical systems and devices, and more particularly to electromechanical systems for implementing reflective devices for displays, sensors, and authentication solutions. In some embodiments a reflective device includes a thin film transistor layer and a plurality of reflective elements positioned approximately parallel to the thin film transistor layer. The plurality of reflective elements is electrically coupled with the thin film transistor layer. Each reflective element is configured for controlling a reflectance parameter of the reflective element based on a first voltage applied to the reflective element by the thin film transistor. In other embodiments, a reflective element includes a transparent substrate and a plurality of polymer-air pair layers positioned approximately parallel position to the transparent substrate.

Abstract: The presently disclosed subject matter relates to electromechanical systems and devices, and more particularly to electromechanical systems for implementing reflective devices for displays, sensors, and authentication solutions. In some embodiments a reflective device includes a thin film transistor layer and a plurality of reflective elements positioned approximately parallel to the thin film transistor layer. The plurality of reflective elements is electrically coupled with the thin film transistor layer. Each reflective element is configured for controlling a reflectance parameter of the reflective element based on a first voltage applied to the reflective element by the thin film transistor. In other embodiments, a reflective element includes a transparent substrate and a plurality of polymer-air pair layers positioned approximately parallel position to the transparent substrate.

Abstract: Systems and methods for single wavelength with dual channels for control signal and Internet data transmission are disclosed. According to an aspect, a network unit may include a communications module configured to receive a single wavelength signal having first and second channels. The first channel may carry Internet data. The second channel may carry power grid control and monitoring data. Further, the network unit may include a multiplexer configured to multiplex the Internet data and the power grid control and monitoring data.

Abstract: A method and apparatus for amplifying an optical signal includes an amplification scheme that combines Raman amplification (RA) with a semiconductor optical amplifier (SOA) to achieve a wider bandwidth, flatter gain spectrum, and higher gain than either RA or SOA is able to achieve independently. The SOA is typically a conventional SOA selected to have a negatively sloped response, whereas the RA stage typically includes a distributed Raman amplifier pumped with a wavelength and power so as to have a positively sloped response. In the preferred embodiment, SOA precedes the RA stage to improve the signal-to-noise ratio.

Abstract: A novel method of making a semiconductor device that comprises p-type III-V semiconductor material is disclosed. The method comprises heating of a graphite body such that the body serves as a sublimation source of carbon atoms that are incorporated into the III-V semiconductor material. Exemplarily, the carbon doped material is the base of a GaAs-based HBT.

Abstract: A scalable and relatively easily manufacturable heterojunction bipolar transistor (HBT) comprises a thin (exemplarily 5-25 nm) emitter layer that serves as an etch stop layer and that furthermore passivates the extrinsic base region. The portion of the emitter layer that overlies the extrinsic base region is essentially fully depleted at all bias voltages in the normal operating range of the transistor. Base contact is established through the emitter layer, exemplarily by means of a metallized region on the emitter layer. A novel technique for carbon doping is also disclosed. Use of the novel technique makes possible a further embodiment of the inventive HBT, wherein base contact is made by means of Be implantation into the emitter layer.

Abstract: A transistor is described which the base region comprises a submonolayer of essentially only dopant atoms. One embodiment is a GaAs/AlGaAs heterojunction bipolar transistor in which the base region comprises a submonolayer of Be atoms. The effective base transit time is negligible in these transistors.