Abstract: A process to stabilize nitrogen-containing or oxygen-containing organosilane from acid catalyzed attack and retard the resulting decomposition is disclosed. Such organosilanes, and the nitrogen-containing organosilane in particular, with a least one Si—H or N—H group are susceptible to this type of product decomposition. Treatment with a weakly basic ion exchange media retards this decomposition by scavenging the anions or acids that are attacking the Si—H group. Dilute exposures to these anions can initiate significant decomposition and effect product stability and long-term shelf-life for semiconductor processing for the use of silicon oxide, silicon oxynitride and silicon nitride films.

Abstract: A process to stabilize nitrogen-containing or oxygen-containing organosilane from acid catalyzed attack and retard the resulting decomposition is disclosed. Such organosilanes, and the nitrogen-containing organosilane in particular, with a least one Si—H or N—H group are susceptible to this type of product decomposition. Treatment with a weakly basic ion exchange media retards this decomposition by scavenging the anions or acids that are attacking the Si—H group. Dilute exposures to these anions can initiate significant decomposition and effect product stability and long-term shelf-life for semiconductor processing for the use of silicon oxide, silicon oxynitride and silicon nitride films.