Abstract: A substrate processing tool capable of forming an carbon layer on a substrate by generating a plasma including carbon and non-carbon ions in a processing chamber, suspending the carbon and non-carbon ions in the processing chamber, removing mostly the suspended non-carbon ions from the processing chamber, and bombarding the substrate surface with mostly carbon ions. The one or more steps of the above sequence may be repeated until the carbon layer is of desired thickness.

Abstract: An apparatus, comprising: a process chamber, wherein the process chamber comprises: a window, wherein the window comprises a dielectric material that is transmissive to radio frequency (RF) energy, wherein the window has a first side and a second side opposite the first side; a collar assembly having an aperture covered by the window, wherein the collar assembly supports the first side of the window; and one or more RF coils positioned above the second side of the window, wherein, when viewed along a first axis perpendicular to the window, a radial distance between an outermost portion of the one or more RF coils and an innermost portion of an electrically conductive portion of the collar assembly that intersects with a first reference plane that is perpendicular to the first axis and between the first side of the window and the one or more RF coils is greater than or equal to 40 mm.

Abstract: An apparatus for forming a plasma may include one or more coupling ports to accept a radiofrequency (RF) current. The apparatus may additionally include one or more coupling structures which may include one or more conductive loops to permit the RF current to conduct from at least a first portion of the one or more coupling ports to at least a second port of the one or more coupling ports. The one or more conductive loops may each be configured to exhibit a first value of inductance in the absence of the plasma and to exhibit a second value of inductance in the presence of the plasma. The one or more coupling structures may each include a reactive element, in which each reactive element is coupled to a corresponding one of the one or more conductive loops so as to form a corresponding number of coupling structures. Each RF coupling structure may have a resonant frequency that increases in response to the presence of the plasma.

Abstract: An RF antenna is configured, when powered, to inductively generate plasma in a process region of a chamber, including: an array of parallel conductive lines that are oriented along a plane, the array including a first conductive line, a second conductive line, a third conductive line, and a fourth conductive line; wherein the first and second conductive lines are adjacent, wherein the second and third conductive lines are adjacent, and wherein the third and fourth conductive lines are adjacent; wherein when the RF antenna is powered, current flow in the adjacent first and second conductive lines occurs in an opposite direction, current flow in the adjacent second and third conductive lines occurs in a same direction, current flow in the adjacent third and fourth conductive lines occurs in an opposite direction.

Abstract: An apparatus for forming a plasma may include one or more coupling ports to accept a radiofrequency (RF) current. The apparatus may additionally include one or more coupling structures which may include one or more conductive loops to permit the RF current to conduct from at least a first portion of the one or more coupling ports to at least a second port of the one or more coupling ports. The one or more conductive loops may each be configured to exhibit a first value of inductance in the absence of the plasma and to exhibit a second value of inductance in the presence of the plasma. The one or more coupling structures may each include a reactive element, in which each reactive element is coupled to a corresponding one of the one or more conductive loops so as to form a corresponding number of coupling structures. Each RF coupling structure may have a resonant frequency that increases in response to the presence of the plasma.

Abstract: This disclosure relates to a plasma processing system for controlling plasma density near the edge or perimeter of a substrate that is being processed. The plasma processing system may include a plasma chamber that can receive and process the substrate using plasma for etching the substrate, doping the substrate, or depositing a film on the substrate. This disclosure relates to a plasma processing system for controlling plasma density near the edge or perimeter of a substrate that is being processed. In one embodiment, the plasma density may be controlled by reducing the rate of loss of ions to the chamber wall during processing. This may include biasing a dual electrode ring assembly in the plasma chamber to alter the potential difference between the chamber wall region and the bulk plasma region.

Abstract: An apparatus for forming a plasma may include one or more coupling ports to accept and RF current. The apparatus may additionally include a receptacle to accommodate one or more gases, in which the receptacle is oriented along a first axis. The apparatus may additionally include an RF coupling structure, oriented in a plane and substantially surrounding the receptacle, the RF coupling structure can be configured to conduct an RF current to bring about formation of the plasma within the receptacle. The apparatus may further include one or more linkages, coupled to the RF coupling structure, which may permit the plane of the RF coupling structure to pivot about a second axis so as to tilt the plane of the RF coupling structure toward the first axis.

Abstract: A substrate processing system includes a gas source, an RF source, and a light source. The gas source supplies a first gas to a process module of the substrate processing system. The RF source supplies RF power to the process module to generate plasma when the first gas is supplied to the process module of the substrate processing system. The light source is coupled to the process module to introduce light into the process module during the plasma generation.

Abstract: A substrate processing tool capable of forming an carbon layer on a substrate by generating a plasma including carbon and non-carbon ions in a processing chamber, suspending the carbon and non-carbon ions in the processing chamber, removing mostly the suspended non-carbon ions from the processing chamber, and bombarding the substrate surface with mostly carbon ions. The one or more steps of the above sequence may be repeated until the carbon layer is of desired thickness.

Abstract: A plasma tool in which the generation of two or more plasmas in a processing chamber used for processing a substrate is modulated either temporally, spatially, or both. The modulation of the two plasmas is used for the formation of Diamond Like Carbon (DLC) layers on substrates. One plasma is used for forming an amorphous carbon layer, while the second plasma is used for converting the amorphous carbon layer to a DLC by ion bombardment.

Abstract: An RF antenna is configured, when powered, to inductively generate plasma in a process region of a chamber, including: an array of parallel conductive lines that are oriented along a plane, the array including a first conductive line, a second conductive line, a third conductive line, and a fourth conductive line; wherein the first and second conductive lines are adjacent, wherein the second and third conductive lines are adjacent, and wherein the third and fourth conductive lines are adjacent; wherein when the RF antenna is powered, current flow in the adjacent first and second conductive lines occurs in an opposite direction, current flow in the adjacent second and third conductive lines occurs in a same direction, current flow in the adjacent third and fourth conductive lines occurs in an opposite direction.

Abstract: A processing system is disclosed, having a power transmission element with an interior cavity that propagates electromagnetic energy proximate to a continuous slit in the interior cavity. The continuous slit forms an opening between the interior cavity and a substrate processing chamber. The electromagnetic energy may generate an alternating charge in the continuous slit that enables the generation of an electric field that may propagate into the processing chamber. The electromagnetic energy may be conditioned prior to entering the interior cavity to improve uniformity or stability of the electric field. The conditioning may include, but is not limited to, phase angle, field angle, and number of feeds into the interior cavity.

Abstract: A method for web service load balancing may commence with receiving, from a local DNS server, a request for a web service. The local DNS server may be coupled to a web client requesting the web service. The request may include local DNS server information. The method may continue with determining a geographic location of the local DNS server based on the local DNS server information. The method may further include selecting a web server from a plurality of web servers based on the web service. The method may continue with determining a geographic location of the web server and determining that the geographic location of the local DNS server matches the geographic location of the web server. The method may further include selecting the web server based on the match. The method may continue with sending a response to the local DNS server.

Abstract: A chemical processing system and a method of using the chemical processing system to treat a substrate with a mono-energetic space-charge neutralized neutral beam-activated chemical process is described. The chemical processing system comprises a first plasma chamber for forming a first plasma at a first plasma potential, and a second plasma chamber for forming a second plasma at a second plasma potential greater than the first plasma potential, wherein the second plasma is formed using electron flux from the first plasma. Further, the chemical processing system comprises a substrate holder configured to position a substrate in the second plasma chamber.

Abstract: An apparatus for generating plasma, including a quadrupole antenna having a center region and an outer region and configured to be disposed over a dielectric window of a plasma chamber. The quadrupole antenna including a first coil defining a first SDA and a second coil defining a second SDA, the first coil being in a nested arrangement within the second coil. The nested arrangement places a turn of the first coil to be adjacent to a corresponding turn of the second coil as the first and second coils spiral from the center region to the outer region of the quadrupole antenna. Adjacent turns of each of the first and second coils are horizontally separated from one another by a distance when disposed over the dielectric window.

Abstract: An apparatus for generating plasma, including a quadrupole antenna having a center region and an outer region and configured to be disposed over a dielectric window of a plasma chamber. The quadrupole antenna including a first coil defining a first SDA and a second coil defining a second SDA, the first coil being in a nested arrangement within the second coil. The nested arrangement places a turn of the first coil to be adjacent to a corresponding turn of the second coil as the first and second coils spiral from the center region to the outer region of the quadrupole antenna. Adjacent turns of each of the first and second coils are horizontally separated from one another by a distance when disposed over the dielectric window.

Abstract: Provided are methods and systems for balancing servers based on a server load status. A method for balancing servers based on a server load status may commence with receiving, from a server of a plurality of servers, a service response to a service request. The service response may include a computing load of the server. The method may continue with receiving a next service request from a host. The method may further include determining, based on the computing load of the server, whether the server is available to process the next service request. The method may include selectively sending the next service request to the server based on the determination that the server is available to process the next service request.

Abstract: A processing system is disclosed, having an electron beam source chamber that excites plasma to generate an electron beam, and an ion beam source chamber that houses a substrate and also excites plasma to generate an ion beam. The processing system also includes a dielectric injector coupling the electron beam source chamber to the ion beam source chamber that simultaneously injects the electron beam and the ion beam and propels the electron beam and the ion beam in opposite directions. The voltage potential gradient between the electron beam source chamber and the ion beam source chamber generates an energy field that is sufficient to maintain the electron beam and ion beam as a plasma treats the substrate so that radio frequency (RF) power initially applied to the processing system to generate the electron beam can be terminated thus improving the power efficiency of the processing system.

Abstract: This disclosure relates to a plasma processing system for controlling plasma density near the edge or perimeter of a substrate that is being processed. The plasma processing system may include a plasma chamber that can receive and process the substrate using plasma for etching the substrate, doping the substrate, or depositing a film on the substrate. This disclosure relates to a plasma processing system that may be configured to enable non-ambipolar diffusion to counter ion loss to the chamber wall. The plasma processing system may include a ring cavity coupled to the plasma processing system that is in fluid communication with plasma generated in the plasma processing system. The ring cavity may be coupled to a power source to form plasma that may diffuse ions into the plasma processing system to minimize the impact of ion loss to the chamber wall.

Abstract: Provided is a method and system for TCP SYN cookie validation. The method includes receiving a session SYN packet by a TCP session setup module of a host server, generating a transition cookie including a time value representing the actual time, sending a session SYN/ACK packet, including the transition cookie, in response to the received session SYN packet, receiving a session ACK packet, and determining whether a candidate transition cookie in the received session ACK packet comprises a time value representing a time within a predetermined time interval from the time the session ACK packet is received.