Abstract: A ground shield for an integrated component device to prevent coupling between integrated capacitors and/or inductors and other integrated components. Components are formed upon a substrate. A conductive metal layer is formed or deposited thereon. The conductive metal layer is electrically connected to ground and an isolation layer is formed or deposited upon the conductive metal layer. An integrated capacitor, for example a MIM-type capacitor, is then formed upon the isolation layer. The grounded conductive metal layer absorbs electrical noise such that coupling between the capacitor and other components is prevented.

Abstract: A ground shield for an integrated component device to prevent coupling between integrated capacitors and/or inductors and other integrated components. Components are formed upon a substrate. A conductive metal layer is formed or deposited thereon. The conductive metal layer is electrically connected to ground and an isolation layer is formed or deposited upon the conductive metal layer. An integrated capacitor, for example a MIM-type capacitor, is then formed upon the isolation layer. The grounded conductive metal layer absorbs electrical noise such that coupling between the capacitor and other components is prevented.