Abstract: Disclosed is a rectifier diode device. The rectifier diode device includes a conductive base, a semiconductor chip, a conductive lead and insulation resin. A trench and a post are formed in the conductive base in order to increase a bonding surface between the conductive base and the insulating resin and to lengthen a humidity transfer path for the semiconductor chip. Due to the trench and the post, the bonding surface between the conductive base and the insulating resin increases and the humidity transfer path for the semiconductor chip lengthens, thereby improving heat emission performance of the rectifier diode device. A plurality of prismatic protrusions is formed at an outer peripheral wall of the conductive wire so that coupling force between the conductive wire and an external device is improved. A protrusion ring is provided at a lower surface of the conductive wire so that stress applied to the semiconductor chip is minimized when the rectifier diode device is press-fitted into the external device.