Patents by Inventor Lee Jea Sik

Lee Jea Sik has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Siloxan polymer film on semiconductor substrate
    Patent number: 6559520
    Abstract: A siloxan polymer insulation film has a dielectric constant of 3.1 or lower and has —SiR2O— repeating structural units with a C atom concentration of 20% or less. The siloxan polymer also has high thermal stability and high humidity-resistance. The siloxan polymer is formed by directly vaporizing a silicon-containing hydrocarbon compound of the formula Si&agr;O&agr;−1R2&agr;−&bgr;+2(OCnH2n+1)&bgr; wherein &agr; is an integer of 1-3, &bgr; is 2, n is an integer of 1-3, and R is C1-6 hydrocarbon attached to Si, and then introducing the vaporized compound with an oxidizing agent to the reaction chamber of the plasma CVD apparatus. The residence time of the source gas is lengthened by reducing the total flow of the reaction gas, in such a way as to form a siloxan polymer film having a micropore porous structure with low dielectric constant.
    Type: Grant
    Filed: April 25, 2002
    Date of Patent: May 6, 2003
    Assignee: ASM Japan K.K.
    Inventors: Nobuo Matsuki, Lee Jea Sik, Yoshinori Morisada, Satoshi Takahashi
  • Siloxan polymer film on semiconductor substrate and method for forming same
    Patent number: 6514880
    Abstract: A siloxan polymer insulation film has a dielectric constant of 3.1 or lower and has —SiR2O— repeating structural units with a C atom concentration of 20% or less. The siloxan polymer also has high thermal stability and high humidity-resistance. The siloxan polymer is formed by directly vaporizing a silicon-containing hydrocarbon compound of the formula Si&agr;O&agr;−1R2&agr;−&bgr;+2(OCnH2n+1)&bgr; wherein &agr; is an integer of 1-3, &bgr; is 2, n is an integer of 1-3, and R is C1-6 hydrocarbon attached to Si, and then introducing the vaporized compound with an oxidizing agent to the reaction chamber of the plasma CVD apparatus. The residence time of the source gas is lengthened by reducing the total flow of the reaction gas, in such a way as to form a siloxan polymer film having a micropore porous structure with low dielectric constant.
    Type: Grant
    Filed: April 6, 2001
    Date of Patent: February 4, 2003
    Assignee: ASM Japan K.K.
    Inventors: Nobuo Matsuki, Lee Jea Sik, Yoshinori Morisada, Satoshi Takahashi
  • Siloxan polymer film on semiconductor substrate
    Publication number: 20020160626
    Abstract: A siloxan polymer insulation film has a dielectric constant of 3.1 or lower and has —SiR2O— repeating structural units with a C atom concentration of 20% or less. The siloxan polymer also has high thermal stability and high humidity-resistance. The siloxan polymer is formed by directly vaporizing a silicon-containing hydrocarbon compound of the formula Si&agr;O&agr;−1R2&agr;−&bgr;+2(OCnH2n+1)&bgr; wherein &agr; is an integer of 1-3, &bgr; is 2, n is an integer of 1-3, and R is C1-6 hydrocarbon attached to Si, and then introducing the vaporized compound with an oxidizing agent to the reaction chamber of the plasma CVD apparatus. The residence time of the source gas is lengthened by reducing the total flow of the reaction gas, in such a way as to form a siloxan polymer film having a micropore porous structure with low dielectric constant.
    Type: Application
    Filed: April 25, 2002
    Publication date: October 31, 2002
    Applicant: ASM JAPAN K.K.
    Inventors: Nobuo Matsuki, Lee Jea Sik, Yoshinori Morisada, Satoshi Takahashi
  • Siloxan polymer film on semiconductor substrate and method for forming same
    Publication number: 20010046567
    Abstract: A siloxan polymer insulation film has a dielectric constant of 3.1 or lower and has —SiR2O— repeating structural units with a C atom concentration of 20% or less. The siloxan polymer also has high thermal stability and high humidity-resistance. The siloxan polymer is formed by directly vaporizing a silicon-containing hydrocarbon compound of the formula Si&agr;O&agr;−1R2&agr;−&bgr;+2(OCnH2n+1)&bgr; wherein &agr; is an integer of 1-3, &bgr; is 2, n is an integer of 1-3, and R is C1-6 hydrocarbon attached to Si, and then introducing the vaporized compound with an oxidizing agent to the reaction chamber of the plasma CVD apparatus. The residence time of the source gas is lengthened by reducing the total flow of the reaction gas, in such a way as to form a siloxan polymer film having a micropore porous structure with low dielectric constant.
    Type: Application
    Filed: April 6, 2001
    Publication date: November 29, 2001
    Inventors: Nobuo Matsuki, Lee Jea Sik, Yoshinori Morisada, Satoshi Takahashi