Patents by Inventor Lee Jong Ho

Lee Jong Ho has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7601621
    Abstract: A method of forming surface irregularities comprises preparing a GaN substrate; forming a mask on a surface of the GaN substrate, the mask defining a surface-irregularity formation region; and wet-etching portions of the surface of the GaN substrate by using the mask as an etching mask. The wet-etching of the GaN substrate is performed until the end of one surface of the GaN substrate to be formed by the wet-etching using the mask meets the end of another surface of the GaN substrate to be formed by the wet-etching using the mask, the another surface being adjacent to the one surface.
    Type: Grant
    Filed: May 10, 2007
    Date of Patent: October 13, 2009
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Pun Jae Choi, Masayoshi Koike, Lee Jong Ho
  • Publication number: 20080044937
    Abstract: A method of forming surface irregularities comprises preparing a GaN substrate; forming a mask on a surface of the GaN substrate, the mask defining a surface-irregularity formation region; and wet-etching portions of the surface of the GaN substrate by using the mask as an etching mask. The wet-etching of the GaN substrate is performed until the end of one surface of the GaN substrate to be formed by the wet-etching using the mask meets the end of another surface of the GaN substrate to be formed by the wet-etching using the mask, the another surface being adjacent to the one surface.
    Type: Application
    Filed: May 10, 2007
    Publication date: February 21, 2008
    Inventors: Pun Jae Choi, Masayoshi Koike, Lee Jong Ho