Abstract: A cleaning and disinfection system. More particularly, aspects of the invention relate to a system and method for enhancing the Environment, Social, Governance of a company through autonomous cleaning and disinfection mobile robots. In particular, cleaning, disinfecting and sterilizing public space in mass transportation, for example railway system, by using the autonomous cleaning and disinfection mobile robot.

Abstract: A pharmaceutical composition comprises a taxane (e.g., paclitaxel, docetaxel, cabazitaxel, larotaxel, ortataxel, and/or tesetaxel) in a mixture of first and second surfactants. The absorption of the taxane is increased from the pharmaceutical composition is greater than the sum of the absorption of docetaxel from either the first or the second surfactant. The increase in absorption is especially enhanced when the ratio of the first surfactant to the second surfactant in the pharmaceutical composition is between 60:40 and 85:15 by weight, and the total surfactant weight does not exceed 98% of the total weight. Polysorbate 80, polysorbate 20, and caprylocaproyl polyoxylglycerides serve as suitable first surfactants, and polysorbate 80 or polyethyoxylated castor oil serve as suitable second surfactants. The stability of the pharmaceutical composition may be enhanced by further including a stabilizer (e.g., citric acid and/or ascorbic acid).

Abstract: A chemical mechanical polishing process includes placing a substrate on a first polishing pad of a first platen, wherein the substrate has a bulk metal layer and a barrier layer; polishing the bulk metal layer by using the first polishing pad having a hardness of above 50 (Shore D) until the barrier layer is exposed; polishing the barrier layer on a second polishing pad of a second platen after removing the bulk metal layer, wherein the second polishing pad has a hardness ranging between 40 and 50 (Shore D) and includes an upper layer and a lower backing layer and the upper layer has a hardness less than 50 (Shore D).

Abstract: A chemical mechanical polishing process includes placing a substrate on a first polishing pad of a first platen, wherein the substrate has a bulk metal layer and a barrier layer; polishing the bulk metal layer by using the first polishing pad having a hardness of above 50 (Shore D) until the barrier layer is exposed; polishing the barrier layer on a second polishing pad of a second platen after removing the bulk metal layer, wherein the second polishing pad has a hardness ranging between 40 and 50 (Shore D) and includes an upper layer and a lower backing layer and the upper layer has a hardness less than 50 (Shore D).

Abstract: A copper/barrier CMP process includes (a) providing a substrate having a bulk metal layer and a barrier layer; (b) polishing the substrate with a first hard polishing pad on a first platen to substantially remove an upper portion of the bulk metal layer, wherein the first hard polishing pad has a hardness of above 50 (Shore D); (c) polishing the substrate with a second hard polishing pad on a second platen to remove residual copper, thereby exposing the barrier layer, wherein the second hard polishing pad has a hardness of above 50 (Shore D); and (d) polishing the substrate with a third hard polishing pad on a third platen to remove the barrier layer, wherein the third hard polishing pad has a hardness ranging between 40-50 (Shore D).

Abstract: A multi-step planarizing and polishing method includes performing a first and a second polishing steps, wherein one of the two polishing steps is performed using a silica abrasive based slurry, while the other one of the two polishing steps is performed using a CeO2 abrasive based slurry. A third polishing step is further performed using a fixed abrasive pad. Further, the thickness deviation of wafers entering the third polishing step is controlled.

Abstract: A copper/barrier CMP process includes (a) providing a substrate having a bulk metal layer and a barrier layer; (b) polishing the substrate with a first hard polishing pad on a first platen to substantially remove an upper portion of the bulk metal layer, wherein the first hard polishing pad has a hardness of above 50 (Shore D); (c) polishing the substrate with a second hard polishing pad on a second platen to remove residual copper, thereby exposing the barrier layer, wherein the second hard polishing pad has a hardness of above 50 (Shore D); and (d) polishing the substrate with a third hard polishing pad on a third platen to remove the barrier layer, wherein the third hard polishing pad has a hardness ranging between 40-50 (Shore D).

Abstract: A method for chemical mechanical polishing (CMP) includes a rinsing process performed to clean an orifice of a slurry supplier and other elements of a CMP device. The CMP device includes least one nozzle disposed in the periphery of a base. The function of the nozzle is to spray DI water to the orifice of the slurry supplier so as to prevent slurry residue and clogging.

Abstract: A method and apparatus for testing specific assembled circuits begins by configuring a plurality of applications specific testing entities to test assembled circuits, where the configuring is based on the types of assembled circuits being tested. Next, a specific assembled circuit testing program is provided to the corresponding application specific testing entity based on the type of assembled circuits it is testing. In addition to providing the testing programs to the testing entities, programming instructions are provided to a programmable handler to pick and place the appropriate assembled circuits with the corresponding applications specific testing entities. When the testing of a particular assembled circuit is complete, a test complete indication is provided.